5秒后页面跳转
JANS1N5623 PDF预览

JANS1N5623

更新时间: 2024-09-16 20:33:03
品牌 Logo 应用领域
SENSITRON 二极管
页数 文件大小 规格书
4页 332K
描述
Rectifier Diode, 1 Element, 1A, 1000V V(RRM), Silicon, DO-7, HERMETIC SEALED, GLASS PACKAGE-2

JANS1N5623 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Active零件包装代码:DO-7
包装说明:E-LALF-W2针数:2
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.07
Is Samacsys:N其他特性:HIGH RELIABILITY
外壳连接:ISOLATED配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):1.2 VJEDEC-95代码:DO-7
JESD-30 代码:E-LALF-W2JESD-609代码:e0
湿度敏感等级:1最大非重复峰值正向电流:50 A
元件数量:1端子数量:2
最高工作温度:175 °C最大输出电流:1 A
封装主体材料:GLASS封装形状:ELLIPTICAL
封装形式:LONG FORM峰值回流温度(摄氏度):225
认证状态:Qualified参考标准:MIL-19500
最大重复峰值反向电压:1000 V最大反向恢复时间:0.5 µs
子类别:Rectifier Diodes表面贴装:NO
端子面层:Tin/Lead (Sn/Pb)端子形式:WIRE
端子位置:AXIAL处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

JANS1N5623 数据手册

 浏览型号JANS1N5623的Datasheet PDF文件第2页浏览型号JANS1N5623的Datasheet PDF文件第3页浏览型号JANS1N5623的Datasheet PDF文件第4页 
1N5615/US,1N5617/US,  
1N5619/US,1N5621/US1N5623/US  
SENSITRON  
___  
FAST RECOVERY RECTIFIERS  
SEMICONDUCTOR  
______________________________________________________________________________________  
TECHNICAL DATA  
DATA SHEET 5081, REV. A.3  
AV AI L AB L E AS  
1N, JAN, JANTX, JANTXV  
JANS  
JAN EQUIVALENT*  
SJ*, SX*, SV*, SS*  
Fast Recovery Rectifiers  
Qualified per MIL-PRF-19500/429  
DESCRIPTION:  
This voidless hermetically sealed fast recovery rectifier diode series is military qualified per MIL-PRF-19500/429  
and is targeted for space, commercial and military aircraft, military vehicles, shipboard markets and all high  
reliability applications.  
FEATURES / BENEFITS  
MAXIMUM RATINGS  
Hermetic, non-cavity glass package  
Category I Metallurgically bonded  
All parts are 100% hot solder dipped  
JAN/ JANTX/JANTXV available per  
MIL-PRF-19500/429  
Operating and Storage Temperature: -65oC to +175oC  
Solder temperature: 260 oC for 10s (max)  
Thermal Resistance: 38 oC (junction to lead)  
Thermal Resistance: 13 oC (junction to endcap)  
Forward surge current: 25A @ 8.3 ms half-sine  
“JANS Plus” removes atypical/out of family VF  
ELECTRICAL CHARACTERISTICS  
TYPE  
NUMBER  
PEAK  
INVERSE  
VOLTAGE  
AVG.  
RECTIFIED  
CURRENT  
MAXIMUM  
REVERSE  
CURRENT  
@ PIV  
MAX. PEAK  
FORWARD  
VOLTAGE  
(PULSED)  
PEAK  
1 CYCLE  
SURGE  
MAXIMUM  
REVERSE  
RECOVERY  
TIME  
THERM  
RES  
1
R
JL  
CURRENT2  
d=.375  
Trr  
IF=0.5A IRM=1A  
IR(REC(=0.25A  
Amps  
Amps  
50C  
100C  
25C  
100C  
C/W  
Volts  
200  
400  
600  
800  
V
A
Amps  
25  
nsec  
150  
150  
250  
300  
500  
1N5615  
1N5617  
1N5619  
1N5621  
1N5623  
1.0  
.75  
0.5  
25  
1.6  
3.0  
38  
1000  
Note 1: Io = 1A, TA=55oC  
Note 2: TA=100oC, IO=750mA, f =60Hz, 8.3 surge  
*Sensitron space equivalent diodes are manufactured and screened to MIL-PRF-19500 flow and guidelines starting  
from wafer fabrication through assembly and testing using our internal specification.  
©2012 Sensitron Semiconductor 221 West Industry Court Deer Park, NY 11729-4681  
Phone (631) 586 7600 Fax (631) 242 9798 www.sensitron.com sales@sensitron.com  

与JANS1N5623相关器件

型号 品牌 获取价格 描述 数据表
JANS1N5623US MICROSEMI

获取价格

Rectifier Diode, 1 Element, 1A, Silicon, HERMETIC SEALED, GLASS PACKAGE-2
JANS1N5711 CDI-DIODE

获取价格

SCHOTTKY BARRIER DIODES
JANS1N5711-1 CDI-DIODE

获取价格

SCHOTTKY BARRIER DIODES
JANS1N5711UB MICROSEMI

获取价格

Rectifier Diode, Schottky, 1 Element, 0.033A, Silicon, LEADLESS, CERAMIC PACKAGE-3
JANS1N5711UBCC MICROSEMI

获取价格

暂无描述
JANS1N5711UBD MICROSEMI

获取价格

Rectifier Diode, Schottky, 2 Element, 0.033A, Silicon, ROHS COMPLIANT, LEADLESS, CERAMIC P
JANS1N5711UR-1 MICROSEMI

获取价格

SCHOTTKY BARRIER DIODES
JANS1N5712-1 CDI-DIODE

获取价格

SCHOTTKY BARRIER DIODES
JANS1N5712UB MICROSEMI

获取价格

Rectifier Diode, Schottky, 1 Element, 0.075A, Silicon, ROHS COMPLIANT, LEADLESS, CERAMIC P
JANS1N5712UBCA MICROSEMI

获取价格

Rectifier Diode, Schottky, 2 Element, 0.075A, Silicon, ROHS COMPLIANT, LEADLESS, CERAMIC P