Datasheet > JANKCA2N2484

JANKCA2N2484

更新时间： 2024-02-02 09:50:03

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		晶体半导体晶体管
页数	文件大小	规格书
19页	115K
描述
SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, LOW-POWER TYPES 2N2484, 2N2484UA, 2N2484UB, JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC

阅读下载

中文翻译

获取价格

技术参数
数据手册

如果您发现信息不准确，欢迎纠错

JANKCA2N2484 技术参数

是否Rohs认证：	不符合	生命周期：	Transferred
包装说明：	,	Reach Compliance Code：	unknown
风险等级：	5.92	最大集电极电流 (IC)：	0.05 A
配置：	Single	最小直流电流增益 (hFE)：	100
最高工作温度：	200 °C	极性/信道类型：	NPN
最大功率耗散 (Abs)：	0.36 W	子类别：	Other Transistors
标称过渡频率 (fT)：	60 MHz

JANKCA2N2484 数据手册

The documentation and process

conversion measures necessary to

comply with this revision shall be

completed by 31 November 2000.

INCH-POUND

MIL-PRF-19500/376E

31 August 2000

SUPERSEDING

MIL-PRF-19500/376D

21 August 1998

PERFORMANCE SPECIFICATION

SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, LOW-POWER

TYPES 2N2484, 2N2484UA, 2N2484UB, JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC

This specification is approved for use by all Departments

and Agencies of the Department of Defense.

1. SCOPE

1.1 Scope. This specification covers the performance requirements for NPN, silicon, low-power transistors.

Four levels of product assurance is provided for each device type as specified in MIL-PRF-19500. Two levels of

product assurance are provided for die.

1.2 Physical dimensions. See figure 1 (similar to T0-18), figures 2 and 3 (surface mount case outlines UA and

UB), and figures 4 and 5 (die).

1.3 Maximum ratings.

Types

P_T

V_CBO

V_EBO

V_CEO

I_C

T_Jand T_STG

R_qJA

R_qJC

T_A= +25°C

V dc

mA dc

°C

°C/W

2N2484

2N2484UA

2N2484UB

500 (1)

650 (2)

500 (1)

-65 to +200

325

210

325

146

160

146

(1) Derate linearly at 3.08 mW/°C above T_A= +37.5°C

(2) Derate linearly at 4.76 mW/°C above T_A= +63.5°C.

1.4 Primary electrical characteristics.

h_fe

C_obo

|h_fe|2

V_CE(sat)(1)

Limits

V_CE= 5 V dc

I_C= 1 mA dc

f = 1 kHz

I_E= 0

V_CB= 5 V dc

100 kHz £ f £ 1 MHz

I_C= 1.0 mA dc

I_B= 0.1 mA dc

I_C= 500 mA dc

V_CE= 5 V dc

f = 30 MHz

V dc

0.3

Min

Max

250

900

2.0

7.0

5.0

(1) Pulsed (see 4.5.1).

Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in

improving this document should be addressed to: Defense Supply Center, Columbus, ATTN: DSCC/VAC,

Post Office Box 3990, Columbus, OH 43216-5000, by using the Standardization Document Improvement Proposal

(DD Form 1426) appearing at the end of this document or by letter.

AMSC N/A

FSC 5961

DISTRIBUTION STATEMENT A. Approved for public release; distribution is unlimited.

12 3 4 5 6 7...19

中文翻译

下载PDF

与JANKCA2N2484相关器件

型号	品牌	获取价格	描述	数据表
JANKCA2N2919	MICROSEMI	获取价格	Transistor
JANKCA2N2920	MICROSEMI	获取价格	Transistor
JANKCA2N3439	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 350V V(BR)CEO \| 1A I(C) \| TO-5
JANKCA2N3440	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 250V V(BR)CEO \| 1A I(C) \| TO-5
JANKCA2N3635	MICROSEMI	获取价格	Transistor
JANKCA2N3637	MICROSEMI	获取价格	Transistor
JANKCA2N3743	ETC	获取价格	TRANSISTOR \| BJT \| PNP \| 300V V(BR)CEO \| 50MA I(C) \| TO-39
JANKCA2N3867	ETC	获取价格	TRANSISTOR \| BJT \| PNP \| 40V V(BR)CEO \| 3A I(C) \| TO-5
JANKCA2N3868	ETC	获取价格	TRANSISTOR \| BJT \| PNP \| 60V V(BR)CEO \| 3A I(C) \| TO-5
JANKCA2N4930	ETC	获取价格	TRANSISTOR \| BJT \| PNP \| 200V V(BR)CEO \| 50MA I(C) \| TO-39

与JANKCA2N2484相关文章

MBRS340T3G手册解读：参数说明、产品特性及应用
2024-06-28

1
PMOS管背靠背连接：串联还是并联？
2024-06-28

1
高压电解电容的分类与选型策略
2024-06-28

2
数码管：基本概念、分类、技术发展及市场趋势
2024-06-27

6

产品中心

服务支持

精选活动

关于我们

帮助中心

JANKCA2N2484

JANKCA2N2484 技术参数

JANKCA2N2484 数据手册

与JANKCA2N2484相关器件

与JANKCA2N2484相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

JANKCA2N2484

JANKCA2N2484 技术参数

JANKCA2N2484 数据手册

与JANKCA2N2484相关器件

与JANKCA2N2484相关文章

您还可以找

您在本页遇到什么问题？