Datasheet > JAN2N7218

JAN2N7218

更新时间： 2024-11-04 23:59:59

品牌	Logo	应用领域
其他 - ETC		晶体晶体管开关脉冲局域网
页数	文件大小	规格书
23页	182K
描述
TRANSISTOR \| MOSFET \| N-CHANNEL \| 100V V(BR)DSS \| 28A I(D) \| TO-254AA

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JAN2N7218 数据手册

The documentation and process conversion

measures necessary to comply with this

revision shall be completed by 14 November

2002.

INCH-POUND

MIL-PRF-19500/596E

14 August 2002

SUPERSEDING

MIL-PRF-19500/596D

13 September 1996

PERFORMANCE SPECIFICATION

SEMICONDUCTOR DEVICE, REPETITIVE AVALANCHE, FIELD EFFECT,

TRANSISTOR, N-CHANNEL, SILICON,

TYPES 2N7218, 2N7219, 2N7221, 2N7222, 2N7218U, 2N7219U,

2N7221U, 2N7222U, JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC

This specification is approved for use by all Departments

and Agencies of the Department of Defense.

1. SCOPE

* 1.1 Scope. This specification covers the performance requirements for a N-channel, enhancement mode,

MOSFET, power transistor intended for use in high density power switching applications. Four levels of product

assurance are provided for each device type as specified in MIL-PRF-19500, with avalanche energy maximum

ratings (E_ARand E_AS) and maximum avalanche current I_AR. Two levels of product assurance are provided for die

(element evaluation).

* 1.2 Physical dimensions. See figure 1 (T0-254AA), figure 2 for JANHC and JANKC (die) dimensions, and figure 3

for surface mount (T0-267AB).

* 1.3 Maximum ratings.

V_(BR)DSSmin P_T(1)

P_T

T_A=

V_GSI_D1(2)

T_C=

I_D2(2)

T_C=

I_S

I_DM

(3)

T_op

and

T_STG

Type

V_GS= 0 V

I_D= 1.0 mA

T_C=

+25°C +25°C

+25°C +100°C

V dc

A dc

A dc A (pk)

°C

2N7218, 2N7218U

2N7219, 2N7219U

2N7221, 2N7221U

2N7222, 2N7222U

100

200

400

500

125

112

±20

-55 to +150

See footnotes next page.

Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in

improving this document should be addressed to: Defense Supply Center, Columbus, ATTN: DSCC-VAC,

P.O. Box 3990, Columbus, OH 43216-5000, by using the Standardization Document Improvement Proposal (DD

Form 1426) appearing at the end of this document or by letter.

AMSC N/A

FSC 5961

DISTRIBUTION STATEMENT A. Approved for public release; distribution is unlimited.

12 3 4 5 6 7...23

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与JAN2N7218相关器件

型号	品牌	获取价格	描述	数据表
JAN2N7219	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 200V V(BR)DSS \| 18A I(D) \| TO-254AA
JAN2N7221	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 400V V(BR)DSS \| 10A I(D) \| TO-254AA
JAN2N7224	MICROSEMI	获取价格	N-CHANNEL MOSFET Qualified per MIL-PRF-19500/592
JAN2N72241N6036	MICROSEMI	获取价格	1500 WATT BIDIRECTIONAL TRANSIENT VOLTAGE SUPPESSOR Qualified per MIL-PRF-19500/507
JAN2N72241N6036A	MICROSEMI	获取价格	1500 WATT BIDIRECTIONAL TRANSIENT VOLTAGE SUPPESSOR Qualified per MIL-PRF-19500/507
JAN2N72241N6036AE3	MICROSEMI	获取价格	1500 WATT BIDIRECTIONAL TRANSIENT VOLTAGE SUPPESSOR Qualified per MIL-PRF-19500/507
JAN2N72241N6036E3	MICROSEMI	获取价格	1500 WATT BIDIRECTIONAL TRANSIENT VOLTAGE SUPPESSOR Qualified per MIL-PRF-19500/507
JAN2N72241N6072	MICROSEMI	获取价格	1500 WATT BIDIRECTIONAL TRANSIENT VOLTAGE SUPPESSOR Qualified per MIL-PRF-19500/507
JAN2N72241N6072A	MICROSEMI	获取价格	1500 WATT BIDIRECTIONAL TRANSIENT VOLTAGE SUPPESSOR Qualified per MIL-PRF-19500/507
JAN2N72241N6072AE3	MICROSEMI	获取价格	1500 WATT BIDIRECTIONAL TRANSIENT VOLTAGE SUPPESSOR Qualified per MIL-PRF-19500/507

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