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JAN2N7224 PDF预览

JAN2N7224

更新时间: 2024-11-05 12:09:27
品牌 Logo 应用领域
美高森美 - MICROSEMI 晶体晶体管功率场效应晶体管局域网
页数 文件大小 规格书
9页 950K
描述
N-CHANNEL MOSFET Qualified per MIL-PRF-19500/592

JAN2N7224 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Obsolete零件包装代码:TO-254AA
包装说明:FLANGE MOUNT, S-CSFM-P3针数:3
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.29.00.95风险等级:5.44
Is Samacsys:N其他特性:HIGH RELIABILITY
外壳连接:ISOLATED配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:100 V最大漏极电流 (Abs) (ID):34 A
最大漏极电流 (ID):34 A最大漏源导通电阻:0.081 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:TO-254AA
JESD-30 代码:S-CSFM-P3元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:CERAMIC, METAL-SEALED COFIRED
封装形状:SQUARE封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):150 W最大脉冲漏极电流 (IDM):136 A
认证状态:Qualified参考标准:MIL-19500
子类别:FET General Purpose Powers表面贴装:NO
端子形式:PIN/PEG端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

JAN2N7224 数据手册

 浏览型号JAN2N7224的Datasheet PDF文件第2页浏览型号JAN2N7224的Datasheet PDF文件第3页浏览型号JAN2N7224的Datasheet PDF文件第4页浏览型号JAN2N7224的Datasheet PDF文件第5页浏览型号JAN2N7224的Datasheet PDF文件第6页浏览型号JAN2N7224的Datasheet PDF文件第7页 

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