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JAN2N7224U PDF预览

JAN2N7224U

更新时间: 2024-09-15 13:08:59
品牌 Logo 应用领域
美高森美 - MICROSEMI 晶体晶体管功率场效应晶体管局域网
页数 文件大小 规格书
9页 950K
描述
Power Field-Effect Transistor, 34A I(D), 100V, 0.081ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-276AB, SMD-1, U-PKG-3

JAN2N7224U 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Obsolete零件包装代码:TO-276AB
包装说明:CHIP CARRIER, R-XBCC-N3针数:3
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:5.44外壳连接:DRAIN
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:100 V
最大漏极电流 (ID):34 A最大漏源导通电阻:0.081 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:TO-276AB
JESD-30 代码:R-XBCC-N3JESD-609代码:e0
元件数量:1端子数量:3
工作模式:ENHANCEMENT MODE封装主体材料:UNSPECIFIED
封装形状:RECTANGULAR封装形式:CHIP CARRIER
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
认证状态:Qualified参考标准:MIL-19500/592
表面贴装:YES端子面层:Tin/Lead (Sn/Pb)
端子形式:NO LEAD端子位置:BOTTOM
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管元件材料:SILICON
Base Number Matches:1

JAN2N7224U 数据手册

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