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JAN2N7225U PDF预览

JAN2N7225U

更新时间: 2024-09-16 13:01:15
品牌 Logo 应用领域
美高森美 - MICROSEMI 晶体晶体管功率场效应晶体管局域网
页数 文件大小 规格书
9页 950K
描述
Power Field-Effect Transistor, 27.4A I(D), 200V, 0.105ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-276AB, U3, U PKG-3

JAN2N7225U 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:TO-276AB包装说明:CHIP CARRIER, R-XBCC-N3
针数:3Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.44
外壳连接:DRAIN配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:200 V最大漏极电流 (ID):27.4 A
最大漏源导通电阻:0.105 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:TO-276ABJESD-30 代码:R-XBCC-N3
元件数量:1端子数量:3
工作模式:ENHANCEMENT MODE封装主体材料:UNSPECIFIED
封装形状:RECTANGULAR封装形式:CHIP CARRIER
极性/信道类型:N-CHANNEL认证状态:Qualified
参考标准:MIL-19500/592表面贴装:YES
端子形式:NO LEAD端子位置:BOTTOM
晶体管元件材料:SILICONBase Number Matches:1

JAN2N7225U 数据手册

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