Datasheet > JAN2N7221

JAN2N7221

更新时间： 2024-11-04 23:59:59

品牌	Logo	应用领域
其他 - ETC		晶体晶体管
页数	文件大小	规格书
23页	182K
描述
TRANSISTOR \| MOSFET \| N-CHANNEL \| 400V V(BR)DSS \| 10A I(D) \| TO-254AA

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

JAN2N7221 数据手册

The documentation and process conversion

measures necessary to comply with this

revision shall be completed by 14 November

2002.

INCH-POUND

MIL-PRF-19500/596E

14 August 2002

SUPERSEDING

MIL-PRF-19500/596D

13 September 1996

PERFORMANCE SPECIFICATION

SEMICONDUCTOR DEVICE, REPETITIVE AVALANCHE, FIELD EFFECT,

TRANSISTOR, N-CHANNEL, SILICON,

TYPES 2N7218, 2N7219, 2N7221, 2N7222, 2N7218U, 2N7219U,

2N7221U, 2N7222U, JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC

This specification is approved for use by all Departments

and Agencies of the Department of Defense.

1. SCOPE

* 1.1 Scope. This specification covers the performance requirements for a N-channel, enhancement mode,

MOSFET, power transistor intended for use in high density power switching applications. Four levels of product

assurance are provided for each device type as specified in MIL-PRF-19500, with avalanche energy maximum

ratings (E_ARand E_AS) and maximum avalanche current I_AR. Two levels of product assurance are provided for die

(element evaluation).

* 1.2 Physical dimensions. See figure 1 (T0-254AA), figure 2 for JANHC and JANKC (die) dimensions, and figure 3

for surface mount (T0-267AB).

* 1.3 Maximum ratings.

V_(BR)DSSmin P_T(1)

P_T

T_A=

V_GSI_D1(2)

T_C=

I_D2(2)

T_C=

I_S

I_DM

(3)

T_op

and

T_STG

Type

V_GS= 0 V

I_D= 1.0 mA

T_C=

+25°C +25°C

+25°C +100°C

V dc

A dc

A dc A (pk)

°C

2N7218, 2N7218U

2N7219, 2N7219U

2N7221, 2N7221U

2N7222, 2N7222U

100

200

400

500

125

112

±20

-55 to +150

See footnotes next page.

Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in

improving this document should be addressed to: Defense Supply Center, Columbus, ATTN: DSCC-VAC,

P.O. Box 3990, Columbus, OH 43216-5000, by using the Standardization Document Improvement Proposal (DD

Form 1426) appearing at the end of this document or by letter.

AMSC N/A

FSC 5961

DISTRIBUTION STATEMENT A. Approved for public release; distribution is unlimited.

12 3 4 5 6 7...23

中文翻译

下载PDF

与JAN2N7221相关器件

型号	品牌	获取价格	描述	数据表
JAN2N7224	MICROSEMI	获取价格	N-CHANNEL MOSFET Qualified per MIL-PRF-19500/592
JAN2N72241N6036	MICROSEMI	获取价格	1500 WATT BIDIRECTIONAL TRANSIENT VOLTAGE SUPPESSOR Qualified per MIL-PRF-19500/507
JAN2N72241N6036A	MICROSEMI	获取价格	1500 WATT BIDIRECTIONAL TRANSIENT VOLTAGE SUPPESSOR Qualified per MIL-PRF-19500/507
JAN2N72241N6036AE3	MICROSEMI	获取价格	1500 WATT BIDIRECTIONAL TRANSIENT VOLTAGE SUPPESSOR Qualified per MIL-PRF-19500/507
JAN2N72241N6036E3	MICROSEMI	获取价格	1500 WATT BIDIRECTIONAL TRANSIENT VOLTAGE SUPPESSOR Qualified per MIL-PRF-19500/507
JAN2N72241N6072	MICROSEMI	获取价格	1500 WATT BIDIRECTIONAL TRANSIENT VOLTAGE SUPPESSOR Qualified per MIL-PRF-19500/507
JAN2N72241N6072A	MICROSEMI	获取价格	1500 WATT BIDIRECTIONAL TRANSIENT VOLTAGE SUPPESSOR Qualified per MIL-PRF-19500/507
JAN2N72241N6072AE3	MICROSEMI	获取价格	1500 WATT BIDIRECTIONAL TRANSIENT VOLTAGE SUPPESSOR Qualified per MIL-PRF-19500/507
JAN2N72241N6072E3	MICROSEMI	获取价格	1500 WATT BIDIRECTIONAL TRANSIENT VOLTAGE SUPPESSOR Qualified per MIL-PRF-19500/507
JAN2N7224U	MICROSEMI	获取价格	Power Field-Effect Transistor, 34A I(D), 100V, 0.081ohm, 1-Element, N-Channel, Silicon, Me

与JAN2N7221相关文章

英伟达新AI芯片Rubin或提前半年亮相
2024-11-05

13
苹果iPhone 17将全系采用三星/LG显示LTPO OLED面板
2024-11-05

9
三星深化印度制造布局，供应链本地化进程加速
2024-10-29

35
芯擎科技“星辰一号”自动驾驶芯片点亮成功，2025年量产在即
2024-10-29

31

产品中心

服务支持

精选活动

关于我们

帮助中心

JAN2N7221

JAN2N7221 数据手册

与JAN2N7221相关器件

与JAN2N7221相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

JAN2N7221

JAN2N7221 数据手册

与JAN2N7221相关器件

与JAN2N7221相关文章

您还可以找

您在本页遇到什么问题？