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JAN2N5684 PDF预览

JAN2N5684

更新时间: 2024-11-28 22:51:43
品牌 Logo 应用领域
美高森美 - MICROSEMI 晶体晶体管
页数 文件大小 规格书
2页 59K
描述
NPN POWER SILICON TRANSISTOR

JAN2N5684 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Transferred零件包装代码:TO-3
包装说明:TO-3, 2 PIN针数:2
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:5.29外壳连接:COLLECTOR
最大集电极电流 (IC):50 A集电极-发射极最大电压:80 V
配置:SINGLE最小直流电流增益 (hFE):5
JEDEC-95代码:TO-204AAJESD-30 代码:O-MBFM-P2
JESD-609代码:e0元件数量:1
端子数量:2最高工作温度:200 °C
封装主体材料:METAL封装形状:ROUND
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:PNP认证状态:Qualified
参考标准:MIL-19500/466B表面贴装:NO
端子面层:Tin/Lead (Sn/Pb)端子形式:PIN/PEG
端子位置:BOTTOM处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管元件材料:SILICON标称过渡频率 (fT):2 MHz

JAN2N5684 数据手册

 浏览型号JAN2N5684的Datasheet PDF文件第2页 
TECHNICAL DATA  
NPN POWER SILICON TRANSISTOR  
Qualified per MIL-PRF-19500/ 466  
Devices  
Qualified Level  
JAN  
2N5683  
2N5684  
JANTX  
JANTXV  
MAXIMUM RATINGS  
Ratings  
Symbol 2N5683 2N5684 Unit  
Collector-Emitter Voltage  
Collector-Base Voltage  
Emitter-Base Voltage  
Base Current  
Collector Current  
Total Power Dissipation (1)  
60  
80  
Vdc  
Vdc  
Vdc  
Adc  
Adc  
VCEO  
VCBO  
VEBO  
IB  
60  
80  
5.0  
15  
50  
IC  
@ TC = 250C  
@ TC = 1000C  
300  
171  
W
W
0C  
PT  
TO-3*  
Operating & Storage Junction Temperature Range  
-65 to +200  
TJ, T  
stg  
(TO-204AA)  
THERMAL CHARACTERISTICS  
Characteristics  
Symbol  
Max.  
Unit  
0C/W  
Thermal Resistance, Junction-to-Case  
1) Derate linearly 1.715 W/0C between TC = +250C and TC = +2000C  
0.584  
R
qJC  
*See appendix A for  
package outline  
ELECTRICAL CHARACTERISTICS (TC = 250C unless otherwise noted)  
Characteristics  
OFF CHARACTERISTICS  
Collector-Emitter Breakdown Voltage  
Symbol  
Min.  
Max.  
Unit  
Vdc  
60  
80  
IC = 200 mAdc  
2N5683  
2N5684  
V(BR)  
CEO  
Collector-Emitter Cutoff Current  
VCE = 30 Vdc  
VCE = 40 Vdc  
Collector-Emitter Cutoff Current  
VCE = 60 Vdc, VBE = 1.5 Vdc  
VCE = 80 Vdc, VBE = 1.5 Vdc  
Collector-Base Cutoff Current  
VCB = 60 Vdc  
5.0  
5.0  
2N5683  
2N5684  
ICEO  
mAdc  
mAdc  
5.0  
5.0  
2N5683  
2N5684  
ICEX  
5.0  
5.0  
2N5683  
2N5684  
ICBO  
mAdc  
mAdc  
VCB = 80 Vdc  
Emitter-Base Cutoff Current  
VEB = 5.0 Vdc  
5.0  
IEBO  
6 Lake Street, Lawrence, MA 01841  
120101  
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803  
Page 1 of 2  

JAN2N5684 替代型号

型号 品牌 替代类型 描述 数据表
JANTXV2N5684 MICROSEMI

完全替代

NPN POWER SILICON TRANSISTOR
JANTX2N5684 MICROSEMI

完全替代

NPN POWER SILICON TRANSISTOR
2N5684 MICROSEMI

完全替代

NPN POWER SILICON TRANSISTOR

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