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JAN1N6101 PDF预览

JAN1N6101

更新时间： 2024-02-21 17:14:12
品牌 Logo 应用领域
美高森美 - MICROSEMI 光电二极管
页数 文件大小 规格书
4页 60K
描述
Rectifier Diode, 8 Element, 0.3A, Silicon, HERMETIC SEALED, CERAMIC, DIP-16

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中文翻译

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JAN1N6101 技术参数

生命周期：ObsoleteReach Compliance Code：unknown
风险等级：5.75二极管元件材料：SILICON
二极管类型：RECTIFIER DIODEJESD-30 代码：R-PDIP-T14
端子数量：14最大输出电流：0.3 A
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：IN-LINE最大功率耗散：0.6 W
认证状态：Not Qualified参考标准：MIL-19500/474E
最大反向恢复时间：0.005 µs表面贴装：NO
端子形式：THROUGH-HOLE端子位置：DUAL
Base Number Matches：1

JAN1N6101 数据手册

 浏览型号JAN1N6101的Datasheet PDF文件第2页浏览型号JAN1N6101的Datasheet PDF文件第3页浏览型号JAN1N6101的Datasheet PDF文件第4页 
TECHNICAL DATA SHEET  
6 Lake Street, Lawrence, MA 01841  
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803  
Website: http: //www.microsemi.com  
ISOLATED DIODE ARRAY  
Qualified per MIL-PRF-19500/474  
DEVICES  
LEVELS  
1N6101  
JAN  
JANTX  
JANTXV  
DESCRIPTION  
These low capacitance diode arrays are multiple, discrete, isolated junctions  
fabricated by a planar process and mounted in a 16-PIN package for use as  
steering diodes protecting up to eight I/O ports from ESD, EFT, or surge by  
directing them either to the positive side of the power supply line or to ground  
(see figure 1). An external TVS diode may be added between the positive supply  
line and ground to prevent overvoltage on the supply rail. They may also be used  
in fast switching core-driver applications. This includes computers and peripheral  
equipment such as magnetic cores, thin-film memories, plated-wire memories,  
etc., as well as decoding or encoding applications. These arrays offer many  
advantages of integrated circuits such as high-density packaging and improved  
reliability. This is a result of fewer pick and place operations, smaller footprint,  
smaller weight, and elimination of various discrete packages that may not be as  
user friendly in PC board mounting.  
16-PIN Ceramic  
DIP  
IMPORTANT: For the most current data, consult MICROSEMI’s website:  
http://www.microsemi.com  
FEATURES  
¾ Hermetic Ceramic Package  
¾ Isolated Diodes to Eliminate Cross-Talk Voltages  
¾ High Breakdown Voltage VBR > 75 V at 5 μA  
¾ Low Leakage IR < 100nA at 40 V  
¾ Low Capacitance C < 4.0 pF  
¾ Switching Speeds less than 10 ns  
¾ Options for screening in accordance with MIL-PRF-19500/474 for JAN,  
JANTX, JANTXV, the prefixes respectively to part numbers.  
T4-LDS-0083 Rev. 1 (082463)  
Page 1 of 4  
1234

中文翻译

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JAN1N6101 替代型号

型号 品牌 替代类型 描述 数据表
JANTXV1N6101 MICROSEMI

完全替代

 MONOLITHIC AIR ISOLATED DIODE ARRAY
JANTX1N6101 MICROSEMI

完全替代

 MONOLITHIC AIR ISOLATED DIODE ARRAY
1N6101 MICROSEMI

完全替代

 MONOLITHIC AIR ISOLATED DIODE ARRAY

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