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JAN1N6101 PDF预览

JAN1N6101

更新时间: 2024-11-27 14:51:43
品牌 Logo 应用领域
美高森美 - MICROSEMI 光电二极管
页数 文件大小 规格书
4页 60K
描述
Rectifier Diode, 8 Element, 0.3A, Silicon, HERMETIC SEALED, CERAMIC, DIP-16

JAN1N6101 技术参数

是否无铅:含铅是否Rohs认证:不符合
生命周期:Active零件包装代码:DIP
包装说明:R-CDIP-T16针数:14
Reach Compliance Code:not_compliantECCN代码:EAR99
HTS代码:8541.10.00.70风险等级:5.38
Is Samacsys:N配置:SEPARATE, 8 ELEMENTS
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
JESD-30 代码:R-CDIP-T16JESD-609代码:e0
元件数量:8端子数量:16
最高工作温度:150 °C最低工作温度:-65 °C
最大输出电流:0.3 A封装主体材料:CERAMIC, METAL-SEALED COFIRED
封装形状:RECTANGULAR封装形式:IN-LINE
峰值回流温度(摄氏度):NOT SPECIFIED最大功率耗散:0.6 W
认证状态:Qualified参考标准:MIL-19500/474
最大反向恢复时间:0.01 µs表面贴装:NO
端子面层:Tin/Lead (Sn/Pb)端子形式:THROUGH-HOLE
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

JAN1N6101 数据手册

 浏览型号JAN1N6101的Datasheet PDF文件第2页浏览型号JAN1N6101的Datasheet PDF文件第3页浏览型号JAN1N6101的Datasheet PDF文件第4页 
TECHNICAL DATA SHEET  
6 Lake Street, Lawrence, MA 01841  
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803  
Website: http: //www.microsemi.com  
ISOLATED DIODE ARRAY  
Qualified per MIL-PRF-19500/474  
DEVICES  
LEVELS  
1N6101  
JAN  
JANTX  
JANTXV  
DESCRIPTION  
These low capacitance diode arrays are multiple, discrete, isolated junctions  
fabricated by a planar process and mounted in a 16-PIN package for use as  
steering diodes protecting up to eight I/O ports from ESD, EFT, or surge by  
directing them either to the positive side of the power supply line or to ground  
(see figure 1). An external TVS diode may be added between the positive supply  
line and ground to prevent overvoltage on the supply rail. They may also be used  
in fast switching core-driver applications. This includes computers and peripheral  
equipment such as magnetic cores, thin-film memories, plated-wire memories,  
etc., as well as decoding or encoding applications. These arrays offer many  
advantages of integrated circuits such as high-density packaging and improved  
reliability. This is a result of fewer pick and place operations, smaller footprint,  
smaller weight, and elimination of various discrete packages that may not be as  
user friendly in PC board mounting.  
16-PIN Ceramic  
DIP  
IMPORTANT: For the most current data, consult MICROSEMI’s website:  
http://www.microsemi.com  
FEATURES  
¾ Hermetic Ceramic Package  
¾ Isolated Diodes to Eliminate Cross-Talk Voltages  
¾ High Breakdown Voltage VBR > 75 V at 5 μA  
¾ Low Leakage IR < 100nA at 40 V  
¾ Low Capacitance C < 4.0 pF  
¾ Switching Speeds less than 10 ns  
¾ Options for screening in accordance with MIL-PRF-19500/474 for JAN,  
JANTX, JANTXV, the prefixes respectively to part numbers.  
T4-LDS-0083 Rev. 1 (082463)  
Page 1 of 4  

JAN1N6101 替代型号

型号 品牌 替代类型 描述 数据表
JANTXV1N6101 MICROSEMI

完全替代

MONOLITHIC AIR ISOLATED DIODE ARRAY
JANTX1N6101 MICROSEMI

完全替代

MONOLITHIC AIR ISOLATED DIODE ARRAY
1N6101 MICROSEMI

完全替代

MONOLITHIC AIR ISOLATED DIODE ARRAY

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