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JAN1N6104US

更新时间： 2024-11-19 04:22:43
品牌 Logo 应用领域
美高森美 - MICROSEMI 局域网二极管
页数 文件大小 规格书
5页 169K
描述
Trans Voltage Suppressor Diode, 500W, 6.2V V(RWM), Bidirectional, 1 Element, Silicon,

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JAN1N6104US 技术参数

是否无铅： 含铅是否Rohs认证： 不符合
生命周期：Active包装说明：O-MELF-R2
Reach Compliance Code：not_compliantECCN代码：EAR99
HTS代码：8541.10.00.50风险等级：5.41
最小击穿电压：7.79 V外壳连接：ISOLATED
配置：SINGLE二极管元件材料：SILICON
二极管类型：TRANS VOLTAGE SUPPRESSOR DIODEJESD-30 代码：O-MELF-R2
JESD-609代码：e0最大非重复峰值反向功率耗散：500 W
元件数量：1端子数量：2
封装主体材料：METAL封装形状：ROUND
封装形式：LONG FORM峰值回流温度（摄氏度）：225
极性：BIDIRECTIONAL最大功率耗散：5 W
认证状态：Qualified参考标准：MIL-19500/516
最大重复峰值反向电压：6.2 V表面贴装：YES
技术：AVALANCHE端子面层：Tin/Lead (Sn/Pb)
端子形式：WRAP AROUND端子位置：END
处于峰值回流温度下的最长时间：20Base Number Matches：1

JAN1N6104US 数据手册

 浏览型号JAN1N6104US的Datasheet PDF文件第2页浏览型号JAN1N6104US的Datasheet PDF文件第3页浏览型号JAN1N6104US的Datasheet PDF文件第4页浏览型号JAN1N6104US的Datasheet PDF文件第5页 
1N6103US thru 1N6137AUS  
and 1N6139US thru 1N6173AUS  
Voidless-Hermetically-Sealed Surface  
Mount Bidirectional Transient Suppressors  
S C O T T S D A L E D I V I S I O N  
DESCRIPTION  
APPEARANCE  
This surface mount series of industry recognized voidless-hermetically-  
sealed Bidirectional Transient Voltage Suppressor (TVS) designs is  
military qualified to MIL-PRF-19500/516 and are ideal for high-reliability  
applications where a failure cannot be tolerated. They provide a Working  
Peak “Standoff” Voltage selection from 5.2 to 152 Volts with two package  
sizes for 500 W and 1500 W ratings. They are very robust in hard-glass  
construction and also use an internal metallurgical bond identified as  
Category I for high-reliability applications. Both of these are also military  
qualified to MIL-PRF-19500/516 and are available as both a non suffix part  
and an “A” suffix part involving different voltage tolerances as further  
described in note 4 on page 2. These devices are also available in axial-  
leaded packages for thru-hole mounting by deleting the “US” suffix (see  
separate data sheet for 1N6103 thru 1N6173A). Microsemi also offers  
numerous other TVS products to meet higher and lower peak pulse power  
and voltage ratings in both through-hole and surface-mount packages.  
Package “E”  
(or “D-5B”)  
Package “G”  
(or “D-5C”)  
IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com  
FEATURES  
APPLICATIONS / BENEFITS  
•
High surge current and peak pulse power provides  
transient voltage protection for sensitive circuits  
•
•
•
Military and other high reliability transient protection  
Extremely robust construction  
•
•
•
•
Triple-layer passivation  
Extensive range in Working Peak “Standoff”  
Voltage (VWM) from 5.7 to 152 V  
Internal “Category I” metallurgical bonds  
Voidless hermetically sealed glass package  
•
•
•
Available as either 500 W or 1500 W Peak Pulse  
Power (PPP) using two different size packages  
JAN/TX/TXV military qualifications available per MIL-PRF-  
19500/516 by adding JAN, JANTX, or JANTXV prefix  
(consult factory for 1N6103US and 1N6138US)  
ESD and EFT protection per IEC6100-4-2 and  
IEC61000-4-4 respectively  
•
•
JANS available for 1N6103AUS thru 1N6118AUS per  
MIL-PRF-19500/516 as well as further options for  
screening in accordance with MIL-PRF-19500 for JANS  
on all others in this series by using a “MSP” prefix, e.g.  
MSP6119AUS, MSP6143AUS, etc.  
Secondary lightning protection per select levels in  
IEC61000-4-5  
•
•
Square-end-cap terminals for easy placement  
Nonsensitive to ESD per MIL-STD-750 Method  
1020  
Axial-leaded equivalents also available (see separate  
data sheet for 1N6103 thru 1N6173)  
•
Inherently radiation hard as described in Microsemi  
MicroNote 050  
MAXIMUM RATINGS  
MECHANICAL AND PACKAGING  
• Operating (TJ) & Storage Temperature: -55oC to +175oC  
•
•
CASE: Hermetically sealed voidless hard glass with  
Tungsten slugs  
• Peak Pulse Power (PPP) at 25oC: 500 W for 1N6103US to  
1N6137AUS and 1500 W for 1N6139US to 1N6173AUS @  
10/1000 µs (also see Figures 1,2 and 3)  
TERMINATIONS: End caps are Copper with  
Tin/Lead (Sn/Pb) finish. Note Previous inventory  
had solid Silver (Ag) with Tin/Lead (Sn/Pb) finish.  
• Impulse repetition rate (duty factor): 0.01%  
•
•
MARKING: None  
• Steady-State Power: 3.0 W for 1N6103US to 1N6137AUS  
and 5.0 W for 1N6139US to 1N6173AUS up to TEC = 150oC.  
Linearly derate above TEC =150oC to zero at TEC =175oC.  
POLARITY: No polarity marking for these  
bidirectional TVSs  
•
•
Tape & Reel option: Standard per EIA-481-B  
Weight: 539 mg for 500 Watt (E Package)  
1100 mg for 1500 Watt (G Package)  
• Steady-State Power: 2.0 W for 1N6103US to 1N6137AUS  
and 3.0 W for 1N6139US to 1N6173AUS @ TA = 25oC (see  
note and Figure 4 for linear derating at higher temperatures)  
• Thermal Resistance (junction to endcap): 8.3 oC/W for  
1N6103US to 1N6137AUS and 5.0 oC/W for 1N6139US to  
1N6173AUS  
•
See package dimensions and recommended pad  
layouts on last page for both the “E” (D-5B) and “G”  
(D-5C) size packages  
• Solder Temperatures: 260oC for 10 s (maximum)  
NOTE: Steady-state power ratings with reference to ambient are for PC boards where thermal resistance from  
mounting point to ambient is sufficiently controlled where TOP or TJ(MAX) is not exceeded  
Copyright © 2008  
05-06-2008 REV D  
Microsemi  
Scottsdale Division  
Page 1  
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503  
12345

中文翻译

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JAN1N6104US 替代型号

型号 品牌 替代类型 描述 数据表
1N6104US MICROSEMI

完全替代

 Trans Voltage Suppressor Diode, 500W, 6.2V V(RWM), Bidirectional, 1 Element, Silicon, HERM

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