PRODUCT SPECIFICATIONS
SEMICONDUCTOR TECHNOLOGY, INC.
3131 S. E. JAY STREET, STUART, FL 34997
PH: (561)283-4500 FAX: (561)286-8914
Website: http://www.semi -tech-inc.com
TYPE: IT127-TO71
CASE OUTLINE:
TO -71
NPN SILICON DUAL DIFFERENTIAL TRANSISTOR
ABSOLUTE MAXIMUM RATING:
Collector to Base
BV
60**
7.0
Vdc
Vdc
CBO
Emitter to Base
BV
EBO
Collector to Emitter
Collector Current
BV
60
Vdc
CEO
I
100
mAdc
Watts
Watts
C
P
Power Dissipation T = 25 °C
D
A
P
0.5 (Both Sides)
-65 to +200
Power Dissipation T = 25 °C
D
C
Storage Temperature
T
°C
°C
°C
stg
Operating Temperature
Lead Temperature From Case
T
-65 to +200
J
T
L
ELECTRICAL CHARACTERISTICS TA @ 25 ° C
PARAMETERS
SYMBOL
TEST CONDITIONS
MIN
TYP MAX UNIT
Collector to Collector Voltage
BV
70
Vdc
CCO
Emitter to Base Voltage
Collector to Emitter Voltage
Collector to Collector Voltage
Collector Cutoff Current
Collector Cutoff Current
Collector Cutoff Current
Collector Cutoff Current
Emitter Cutoff Current
BV
IE = 10µA
IC=1.0mA
7.0
60
Vdc
Vdc
Vdc
EBO
BV
CEO(sus)
BV
100
IC=1.0mA
C1C2
I
VCB=45V
0.1
0.1
nA
CBO
I
VCB=45V, TA=150°C
mA
mA
mA
nA
-
CBO
I
CEX
I
CEX
I
VEB=5.0V
0.1
EBO
D.C. Current Gain Pulsed*
D.C. Current Gain Pulsed*
D.C. Current Gain Pulsed*
D.C. Current Gain Pulsed*
D.C. Current Gain Pulsed*
Saturation Vo ltage*
h
150
200
75
IC=10mA, VCE=5.0V
FE
h
IC=1.0mA, VCE=5.0V
800
-
FE
h
-
IC=1.0mA, VCE=5.0V, TA= -55°C
IC=10mA, VCE=5.0V
FE
h
230
100
-
FE
h
IC=50mA, VCE=5.0V
-
FE
V
V
V
IC=10mA, IB=1.0mA
0.3
0.6
Vdc
Vdc
Vdc
Vdc
Vdc
-
CE(sat)
CE(sat)
BE(sat)
Saturation Voltage*
IC=50mA, IB=5.0mA
Base Emitter Voltage*
Base Emitter Voltage*
V
IC=10mA, VCE=5.0V
IC=50mA, VCE=5.0V
0.9
10
BE(on)
BE(on)
Base Emitter Voltage*
V
Current Gain at F =
h
FE
Emitter Transition Capacitance
Collector to Collector Capacitance
Collector to Collector Leakage Current
Output Capacitance
C
pF
pF
nA
pF
TE
C
I
C1-C2
C1-C2
C
VCB=20V
3.0
ob
Frequency Cutoff
Transition Frequency
f & b
MHz
MHz
f
T
Notes: *Pulse Width £300usec 2% Duty Cycle, ** IC=10mA
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