Datasheet > IT130_SOIC

IT130_SOIC

更新时间： 2024-10-30 11:57:15

品牌	Logo	应用领域
MICROSS		晶体晶体管
页数	文件大小	规格书
1页	275K
描述
MONOLITHIC DUAL NPN TRANSISTOR

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IT130_SOIC 数据手册

IT130

MONOLITHIC DUAL

PNP TRANSISTOR

Linear Systems replaces discontinued Intersil IT130

FEATURES

The IT130 is a monolithic pair of PNP transistors

Direct Replacement for INTERSIL IT130

HIGH h_FE@ LOW CURRENT

OUTPUT CAPACITANCE

mounted in a single SOIC package. The monolithic dual

chip design reduces parasitics and gives better

performance while ensuring extremely tight matching.

The IT130 is a direct replacement for discontinued

Intersil IT130.

≥ 200 @ 10µA

≤ 2.0pF

≤ 5.0µV°C

V_BEtracking

ABSOLUTE MAXIMUM RATINGS ¹

@ 25°C (unless otherwise noted)

The 8 Pin SOIC provides ease of manufacturing, and

the symmetrical pinout prevents improper orientation.

Maximum Temperatures

Storage Temperature

‐65°C to +200°C

‐55°C to +150°C

(See Packaging Information).

Operating Junction Temperature

Maximum Power Dissipation

Continuous Power Dissipation (One side)

Continuous Power Dissipation (Both sides)

Linear Derating factor (One side)

Linear Derating factor (Both sides)

Maximum Currents

250mW

500mW

2.3mW/°C

4.3mW/°C

IT130 Features:

High h_feat low current

Tight matching

Tight V_BEtracking

Low Output Capacitance

Collector Current

10mA

MATCHING CHARACTERISTICS @ 25°C (unless otherwise stated)

SYMBOL

|V_BE1– V_BE2

∆|(V_BE1– V_BE2)| / ∆T

CHARACTERISTIC

MIN

‐‐

TYP

‐‐

MAX

UNITS

µV/°C

CONDITIONS

Base Emitter Voltage Differential

Change with Temperature

Base Current Differential

I_C= 10µA, V_CE= 5V

T_A= ‐55°C to +125°C

I_C= 10µA, V_CE= 5V

|I_B1– I_B2

‐‐

ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted)

SYMBOL

BV_CBO

BV_CEO

BV_EBO

BV_CCO

h_FE

CHARACTERISTICS

MIN.

TYP.

‐‐

MAX.

‐‐

0.5

‐‐

UNITS

CONDITIONS

I_C= 10µA, I_E= 0

Collector to Base Voltage

Click To Buy

Collector to Emitter Voltage

Emitter‐Base Breakdown Voltage

Collector to Collector Voltage

DC Current Gain

6.2

200

225

‐‐

I_C= 10µA, I_B= 0

I_E= 10µA, I_C= 0²

I_C= 10µA, I_E= 0

I_C= 10µA, V_CE= 5V

I_C= 1.0mA, V_CE= 5V

I_C= 0.5mA, I_B= 0.05mA

I_C= 0, V_EB= 3V

V_CE(SAT)

I_EBO

I_CBO

C_OBO

C_C1C2

I_C1C2

f_T

Collector Saturation Voltage

Emitter Cutoff Current

Collector Cutoff Current

Output Capacitance

Collector to Collector Capacitance

Collector to Collector Leakage Current

Current Gain Bandwidth Product

Narrow Band Noise Figure

I_E= 0, V_CB= 45V

I_E= 0, V_CB= 5V

V_CC= 0V

V_CC= ±60V

‐‐

110

‐‐

MHz

I_C= 1mA, V_CE= 5V

I_C= 100µA, V_CE= 5V, BW=200Hz, R_G= 10KΩ,

f = 1KHz

Notes:

1. Absolute Maximum ratings are limiting values above which serviceability may be impaired

2. The reverse base‐to‐emitter voltage must never exceed 6.2 volts; the reverse base‐to‐emitter current must never exceed 10µA.

SOIC (Top View)

Available Packages:

IT130 in SOIC

IT130 available as bare die

Please contact Micross for full package and die dimensions:

Email: chipcomponents@micross.com

Web: www.micross.com/distribution.aspx

Information furnished by Linear Integrated Systems and Micross Components is believed to be accurate and reliable. However, no responsibility is assumed for its use; nor for any infringement of patents or

other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Linear Integrated Systems.

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