Datasheet > IT129-TO71

IT129-TO71

更新时间： 2024-09-13 23:59:51

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其他 - ETC		晶体晶体管
页数	文件大小	规格书
2页	31K
描述
TRANSISTOR \| BJT \| PAIR \| NPN \| 45V V(BR)CEO \| 100MA I(C) \| TO-71

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IT129-TO71 数据手册

PRODUCT SPECIFICATIONS

SEMICONDUCTOR TECHNOLOGY, INC.

3131 S. E. JAY STREET, STUART, FL 34997

PH: (561)283-4500 FAX: (561)286-8914

Website: http://www.semi -tech-inc.com

TYPE: IT129-TO71

CASE OUTLINE:

TO -71

NPN SILICON DUAL DIFFERENTIAL TRANSISTOR

ABSOLUTE MAXIMUM RATING:

Collector to Base

45**

7.0

Vdc

CBO

Emitter to Base

EBO

Collector to Emitter

Collector Current

Vdc

CEO

100

mAdc

Watts

Power Dissipation T = 25 °C

0.5 (Both Sides)

-65 to +200

Power Dissipation T = 25 °C

Storage Temperature

°C

stg

Operating Temperature

Lead Temperature From Case

-65 to +200

ELECTRICAL CHARACTERISTICS TA @ 25 ° C

PARAMETERS

SYMBOL

TEST CONDITIONS

MIN

TYP MAX UNIT

Collector to Collector Voltage

Vdc

CCO

Emitter to Base Voltage

Collector to Emitter Voltage

Collector to Collector Voltage

Collector Cutoff Current

Emitter Cutoff Current

I_E= 10µA

I_C=1.0mA

7.0

Vdc

EBO

CEO

100

I_C=1.0mA

C1C2

V_CB=30V

0.1

CBO

V_CB=30V, T_A=150°C

CBO

CEX

V_EB=5.0V

0.1

EBO

D.C. Current Gain Pulsed*

Saturation Voltage*

100

I_C=10mA, V_CE=5.0V

I_C=1.0mA, V_CE=5.0V

I_C=1.0mA, V_CE=5.0V, T_A= -55°C

I_C=10mA, V_CE=5.0V

115

I_C=50mA, V_CE=5.0V

I_C=10mA, I_B=1.0mA

0.3

0.6

Vdc

CE(sat)

Saturation Voltage*

I_C=50mA, I_B=5.0mA

CE(sat)

Base Emitter Voltage*

BE(sat)

Base Emitter Voltage*

I_C=10mA, V_CE=5.0V

I_C=50mA, V_CE=5.0V

0.9

1.0

BE(on)

Base Emitter Voltage*

BE(on)

Current Gain at F =

Emitter Transition Capacitance

Collector to Collector Capacitance

Collector to Collector Leakage Current

Output Capacitance

C1-C2

V_CB=20V

3.0

Frequency Cutoff

Transition Frequency

f & b

MHz

220

I_C=10mA, V_CE=5.0V

I_C=1.0mA, V_CE=5.0V

Notes: *Pulse Width £300usec 2% Duty Cycle, ** I_C=10mA

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