5秒后页面跳转
捷配首页

Datasheet > IS71V16F32EST08-7070BI
IS71V16F32EST08-7070BI PDF预览

IS71V16F32EST08-7070BI

更新时间： 2024-09-25 19:51:03
品牌 Logo 应用领域
美国芯成 - ISSI 静态存储器内存集成电路
页数 文件大小 规格书
47页 196K
描述
Memory Circuit, 2MX16, CMOS, PBGA73, 8 X 11.60 MM, 0.80 MM PITCH, FBGA-73

阅读下载

中文翻译

获取价格

IS71V16F32EST08-7070BI 技术参数

是否无铅： 含铅是否Rohs认证： 不符合
生命周期：Obsolete零件包装代码：BGA
包装说明：8 X 11.60 MM, 0.80 MM PITCH, FBGA-73针数：73
Reach Compliance Code：compliantHTS代码：8542.32.00.71
风险等级：5.92其他特性：SRAM IS ORGANISED AS 512K X 16
JESD-30 代码：R-PBGA-B73JESD-609代码：e0
长度：11.6 mm内存密度：33554432 bit
内存集成电路类型：MEMORY CIRCUIT内存宽度：16
功能数量：1端子数量：73
字数：2097152 words字数代码：2000000
工作模式：ASYNCHRONOUS最高工作温度：85 °C
最低工作温度：-40 °C组织：2MX16
封装主体材料：PLASTIC/EPOXY封装代码：LFBGA
封装形状：RECTANGULAR封装形式：GRID ARRAY, LOW PROFILE, FINE PITCH
峰值回流温度（摄氏度）：NOT SPECIFIED认证状态：Not Qualified
座面最大高度：1.4 mm最大供电电压 (Vsup)：3.1 V
最小供电电压 (Vsup)：2.7 V标称供电电压 (Vsup)：3 V
表面贴装：YES技术：CMOS
温度等级：INDUSTRIAL端子面层：Tin/Lead (Sn/Pb)
端子形式：BALL端子节距：0.8 mm
端子位置：BOTTOM处于峰值回流温度下的最长时间：NOT SPECIFIED
宽度：8 mmBase Number Matches：1

IS71V16F32EST08-7070BI 数据手册

 浏览型号IS71V16F32EST08-7070BI的Datasheet PDF文件第2页浏览型号IS71V16F32EST08-7070BI的Datasheet PDF文件第3页浏览型号IS71V16F32EST08-7070BI的Datasheet PDF文件第4页浏览型号IS71V16F32EST08-7070BI的Datasheet PDF文件第5页浏览型号IS71V16F32EST08-7070BI的Datasheet PDF文件第6页浏览型号IS71V16F32EST08-7070BI的Datasheet PDF文件第7页 
®
IS71V08F32ESx08  
IS71V16F32ESx08  
3.0 Volt-Only Flash & SRAM COMBO with  
Stacked Multi-Chip Package (MCP) —  
32 Mbit Simultaneous Operation Flash  
Memory and 8 Mbit Static RAM  
ISSI  
PRELIMINARY INFORMATION  
OCTOBER 2002  
MCP FEATURES  
• Program Algorithms:  
• Power supply voltage 2.7V to 3.3V  
Automatically writes and verifies data at specified  
address  
• High performance:  
Flash: 70ns maximum access time  
SRAM: 70ns maximum access time  
• Hidden ROM Region:  
256 byte with a Factory-serialized secure electronic  
serial number (ESN), which is accessible through a  
command sequence  
• Package: 73-ball BGA  
• Operating Temperature: -40C to +85C  
• Data Polling and Toggle Bit:  
FLASH FEATURES  
Allow for detection of program or erase cycle comple-  
tion  
• Power Dissipation:  
Read Current at 1 Mhz: 4 mA maximum  
Read Current at 5 Mhz: 18 mA maximum  
Sleep Mode: 5 µA maximum  
• Ready-Busy output (RY/BY): Detection  
of program or erase cycle completion  
• Over 100,000 write/erase cycles  
• Simultaneous Read and Write Operations:  
• Low supply voltage (Vccf ≤ 2.5V) inhibits writes  
Zero latency between read and write operations; Data  
can be programmed or erased in one bank while data  
is simultaneously being read from the other bank  
• WP/ACC input pin:  
If VIL, allows protection of boot sectors  
If VIH, allows removal of boot sector protection  
If Vacc, program time is reduced by 40%  
• Low-Power Mode:  
A period of no activity causes flash to enter a  
low-power state  
• Boot sector: Top or Bottom  
• Erase Suspend/Resume:  
Suspends of erase activity to allow a read in the  
same bank  
SRAM FEATURES (8 Mb density)  
• Power Dissipation:  
Operating: 25 mA maximum  
Standby: 15 µA maximum  
• Sector Erase Architecture:  
8 sectors of 4k words each and 63 sectors of 32K words  
each in Word Mode, or 8 sectors of 8k bytes each and 63  
sectors of 64K bytes each in Byte Mode  
• Erase Algorithms:  
• Chip Selects: CE1s, CE2s  
• Power down feature using CE1s, or CE2s  
• Data retention supply voltage: 1.2 to 3.3 volt  
Automatically preprograms/erases the flash memory  
entirely, or by sector  
• Byte data control: LBs (DQ0–DQ7), UBs  
(DQ8–DQ15) — in x16 version  
Copyright © 2002 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time  
without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to  
obtain the latest version of this device specification before relying on any published information and before placing orders for products.  
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774  
PRELIMINARY INFORMATION Rev. 00A  
1
10/21/02  
1234567...47

中文翻译

下载PDF

与IS71V16F32EST08-7070BI相关器件

型号 品牌 获取价格 描述 数据表
IS71V16F32GSB04-7070BI ISSI

获取价格

 		Memory Circuit, Flash+SRAM, 2MX16, CMOS, PBGA59, 7 X 9 MM, 0.80 MM PITCH, FBGA-59
IS71V16F32GSB08-7070BI ISSI

获取价格

 		Memory Circuit, 2MX16, CMOS, PBGA73, 8 X 11.60 MM, 0.80 MM PITCH, BGA-73
IS71V16F32GST04-7070BI ISSI

获取价格

 		Memory Circuit, Flash+SRAM, 2MX16, CMOS, PBGA59, 7 X 9 MM, 0.80 MM PITCH, FBGA-59
IS71V16F64GS08-7085AI ISSI

获取价格

 		Memory Circuit, Flash+SRAM, 4MX16, CMOS, PBGA101, 11 X 12 MM, BGA-101
IS71V16F64GS08-8570AI ISSI

获取价格

 		Memory Circuit, Flash+SRAM, 4MX16, CMOS, PBGA101, 11 X 12 MM, BGA-101
IS71V16F64GS08-8570BI ISSI

获取价格

 		Memory Circuit, Flash+SRAM, 4MX16, CMOS, PBGA73, 8 X 11.60 MM, BGA-73
IS71VPCF16KS04-7085MI ISSI

获取价格

 		Memory Circuit, Flash+SRAM, 1MX16, CMOS, PBGA56, 7.20 X 7 MM, 0.80 MM PITCH, MINI, BGA-56
IS71VPCF16NS04-8585FI ISSI

获取价格

 		Memory Circuit, Flash+SRAM, 1MX16, CMOS, PBGA69, 8 X 11 MM, 0.80 MM PITCH, MINI, BGA-69
IS71VPCF16PS04-8585FI ISSI

获取价格

 		Memory Circuit, Flash+SRAM, 1MX16, CMOS, PBGA69, 8 X 11 MM, 0.80 MM PITCH, MINI, BGA-69
IS71VPCF16QS04-7085MI ISSI

获取价格

 		Memory Circuit, Flash+SRAM, 1MX16, CMOS, PBGA56, 7.20 X 7 MM, 0.80 MM PITCH, MINI, BGA-56

与IS71V16F32EST08-7070BI相关文章

您还可以找


热门产品
PCB打样/小批量
铝基板
BOM智能配单
PCBA制造
钣金
精密CNC
模具注塑
薄膜开关
精选活动
PCBA打样特惠
四六层板品质升级
铝基板品质升级
一体化电子制造
DFM下载
服务支持
企业认证
产品展示
工厂展示
工艺能力
积分商城
关于捷配
捷配简介
企业文化
公司动态
人才招聘
联系我们
帮助中心
下单流程
付款流程
开票流程
常见问题
全球PCB制造服务专线 400-613-0088

工作时间：9:00-21:00

CEO邮箱：ceo@jiepei.com

投诉邮箱：tousu@jiepei.com

捷配网-微信公众号 微信公众号
捷配网-微信公众号 抖音公众号
资质认证：
合作快递：
支付方式：
Copyright © 2024 Jiepei.com Inc. All Rights Reserved. 版权所有:杭州捷配信息科技有限公司 浙公网安备 33010502006866号 浙ICP备10014259号-119 营业执照ICP证