Datasheet > IS66WVE4M16CLL

IS66WVE4M16CLL

更新时间： 2022-02-26 14:09:49

品牌	Logo	应用领域
美国芯成 - ISSI		/
页数	文件大小	规格书
32页	663K
描述
Asynchronous and page mode interface

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数据手册

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IS66WVE4M16CLL 数据手册

IS66WVE4M16EALL/BLL/CLL

IS67WVE4M16EALL/BLL/CLL

General Description

PSRAM products are high-speed, CMOS pseudo-static random access memory developed

for low-power, portable applications. The 64Mb DRAM core device is organized

as 4 Meg x 16 bits. These devices include the industry-standard, asynchronous memory

interface found on other low-power SRAM or pseudo-SRAM (PSRAM) offerings.

For seamless operation on an asynchronous memory bus, PSRAM products incorporated a

transparent self-refresh mechanism. The hidden refresh requires no additional support

from the system memory controller and has no significant impact on device read/write

performance.

A user-accessible configuration registers (CR) defines how the PSRAM device performs on-

chip refresh and whether page mode read accesses are permitted. This register is

automatically loaded with a default setting during power-up and can be updated at any

time during normal operation.

Special attention has been focused on current consumption during self-refresh. This

product includes two system-accessible mechanisms to minimize refresh current.

Setting sleep enable (ZZ#) to LOW enables one of two low-power modes: partial-array

refresh (PAR) or deep power-down (DPD). PAR limits refresh to only that part of the

DRAM array that contains essential data. DPD halts refresh operation altogether and is

used when no vital information is stored in the device. The system-configurable refresh

mechanisms are accessed through the CR.

A0~A21

Address

Decode Logic

Input

/Output

Mux

4096K X 16

DRAM

Memory Array

And

Configuration Register

(CR)

Buffers

CE#

WE#

OE#

LB#

UB#

ZZ#

Control

Logic

DQ0~DQ15

[ Functional Block Diagram]

www.issi.com - SRAM@issi.com

Rev.0B | November 2014

123 4 5 6 7...32

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与IS66WVE4M16CLL相关器件

型号	品牌	描述	获取价格	数据表
IS66WVE4M16EALL	ISSI	Asynchronous and page mode interface	获取价格
IS66WVE4M16EALL-70BLI	ISSI	Pseudo Static RAM, 4MX16, 70ns, CMOS, PBGA48, 6 X 8 MM, LEAD FREE, MO-207, TFBGA-48	获取价格
IS66WVE4M16EBLL-55BLI	ISSI	Pseudo Static RAM, 4MX16, 55ns, CMOS, PBGA48, 6 X 8 MM, LEAD FREE, MO-207, TFBGA-48	获取价格
IS66WVE4M16EBLL-55BLI-TR	ISSI	IC PSRAM 64MBIT 55NS 48BGA	获取价格
IS66WVE4M16EBLL-70BLI	ISSI	Pseudo Static RAM, 4MX16, 70ns, CMOS, PBGA48, 6 X 8 MM, LEAD FREE, MO-207, TFBGA-48	获取价格
IS66WVE4M16EBLL-70BLI-TR	ISSI	Pseudo Static RAM,	获取价格