Datasheet > IS66WV51216EBLL

IS66WV51216EBLL

更新时间： 2024-09-27 01:23:31

品牌	Logo	应用领域
美国芯成 - ISSI		/
页数	文件大小	规格书
17页	620K
描述
Three state outputs

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中文翻译

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数据手册

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IS66WV51216EBLL 数据手册

performanceꢀCMOSꢀtechnology.Thisꢀhighlyꢀreliableꢀprocessꢀ

IS66WV51216EALL

IS66/67WV51216EBLL

ADVANCED INFORMATION

NOVEMBER 2013

8Mb LOW VOLTAGE,

ULTRA LOW POWER PSEUDO CMOS STATIC RAM

FEATURES

DESCRIPTION

•ꢀ High-speedꢀaccessꢀtime:ꢀꢀ

TheꢀISSIIS66WV51216EALLandIS66/67WV51216EBLL

areꢀhigh-speed,ꢀ8MꢀbitꢀstaticꢀRAMsꢀorganizedꢀasꢀ512Kꢀ

words by 16 bits. It is fabricated using ISSI'sꢀ high-

– 70ns (IS66WV51216EALL, IS66/67WV51216EBLL)

– 55ns (IS66/67WV51216EBLL)

•ꢀ CMOSꢀlowꢀpowerꢀoperation

•ꢀ Singleꢀpowerꢀsupplyꢀꢀ

coupled with innovative circuit design techniques, yields

high-performanceꢀandꢀlowꢀpowerꢀconsumptionꢀdevices.

– V^ddꢀ=ꢀ1.7V-1.95Vꢀ(IS66WV51216EALL)

– V^ddꢀ=ꢀ2.5V-3.6V (IS66/67WV51216EBLL)

•ꢀ Threeꢀstateꢀoutputs

When CS1ꢀisꢀHIGHꢀ(deselected)ꢀorꢀwhenꢀCS2ꢀisꢀLOꢁ

(deselected)thedeviceassumesastandbymodeatwhich

theꢀpowerꢀdissipationꢀcanꢀbeꢀreducedꢀdownꢀwithꢀCMOSꢀ

input levels.

•ꢀ Dataꢀcontrolꢀforꢀupperꢀandꢀlowerꢀbytes

•ꢀ Industrialꢀtemperatureꢀavailableꢀ

•ꢀ Lead-freeꢀavailableꢀ

Easy memory expansion is provided by using Chip Enable

andꢀOutputꢀEnableꢀinputs.ꢀTheꢀactiveꢀLOꢁꢀꢁriteꢀEnableꢀ

(WE) controls both writing and reading of the memory. A

data byte allows Upper Byte (UB) and Lower Byte (LB)

access.

TheꢀIS66ꢁV51216EALLꢀandꢀIS66/67ꢁV51216EBLLꢀareꢀ

packagedꢀinꢀtheꢀJEDECꢀstandardꢀ48-ballꢀminiꢀBGAꢀ(6mmꢀ

xꢀ8mm)ꢀandꢀ44-PinꢀTSOPꢀ(TYPEꢀII).ꢀTheꢀdeviceꢀisꢀasloꢀ

available for die sales.

FUNCTIONAL BLOCK DIAGRAM

512K x 16

MEMORY ARRAY

A0-A18

DECODER

GND

I/O0-I/O7

Lower Byte

I/O

DATA

COLUMN I/O

CIRCUIT

I/O8-I/O15

Upper Byte

CS2

CS1

CONTROL

CIRCUIT

liability arising out of the application or use of any information, products or services described herein. Customers are advised to obtain the latest version of this device speciﬁcation before relying on

any published information and before placing orders for products.

Integrated Silicon Solution, Inc. does not recommend the use of any of its products in life support applications where the failure or malfunction of the product can reasonably be expected to cause

failure of the life support system or to signiﬁcantly affect its safety or effectiveness. Products are not authorized for use in such applications unless Integrated Silicon Solution, Inc. receives written

assurance to its satisfaction, that:

a.) the risk of injury or damage has been minimized;

b.) the user assume all such risks; and

c.) potential liability of Integrated Silicon Solution, Inc is adequately protected under the circumstances

Integrated Silicon Solution, Inc. — www.issi.com

Rev. 00A

11/22/2013

12 3 4 5 6 7...17

中文翻译

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与IS66WV51216EBLL相关器件

型号	品牌	获取价格	描述	数据表
IS66WV51216EBLL-55BLI	ISSI	获取价格	Pseudo Static RAM, 512KX16, 55ns, CMOS, PBGA48, 6 X 8 MM, LEAD FREE, MO-207, MINI BGA-48
IS66WV51216EBLL-55BLI-TR	ISSI	获取价格	IC PSRAM 8MBIT 55NS 48BGA
IS66WV51216EBLL-55TLI	ISSI	获取价格	Pseudo Static RAM, 512KX16, 55ns, CMOS, PDSO44, 0.400 INCH, LEAD FREE, TSOP2-44
IS66WV51216EBLL-55TLI-TR	ISSI	获取价格	IC PSRAM 8MBIT 55NS 44TSOP
IS66WV51216EBLL-70TLI	ISSI	获取价格	Pseudo Static RAM, 512KX16, 70ns, CMOS, PDSO44, 0.400 INCH, LEAD FREE, TSOP2-44
IS66WVC1M16ALL-7008BLI	ISSI	获取价格	Pseudo Static RAM, 1MX16, CMOS, PBGA54, 6 X 8 MM, MO-207, VFBGA-54
IS66WVC1M16ALL-7010BLI-TR	ISSI	获取价格	Memory IC, 1MX16, CMOS, PBGA54
IS66WVC1M16EALL-7008BLI	ISSI	获取价格	Pseudo Static RAM, 1MX16, 70ns, CMOS, PBGA54, 6 X 8 MM, LEAD FREE, MO-207, VFBGA-54
IS66WVC204816ALL-7008BLI	ISSI	获取价格	DRAM
IS66WVC204816ALL-7010BLI	ISSI	获取价格	DRAM

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