Datasheet > IS62WV6416ALL

IS62WV6416ALL

更新时间： 2024-11-18 03:15:55

品牌	Logo	应用领域
美国芯成 - ISSI		/
页数	文件大小	规格书
17页	111K
描述
64K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM

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中文翻译

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IS62WV6416ALL 数据手册

IS62WV6416ALL

IS62WV6416BLL

ISSI

64K x 16 LOW VOLTAGE,

ULTRA LOW POWER CMOS STATIC RAM

JUNE2005

FEATURES

DESCRIPTION

The ISSI IS62WV6416ALL/ IS62WV6416BLL are high-

speed, 1M bit static RAMs organized as 64K words by 16

bits. It is fabricated using ISSI's high-performance CMOS

technology. This highly reliable process coupled with

innovative circuit design techniques, yields high-

performance and low power consumption devices.

• High-speed access time: 45ns, 55ns

• CMOS low power operation:

30 mW (typical) operating

15 µW (typical) CMOS standby

• TTL compatible interface levels

• Single power supply

When CS1 is HIGH (deselected) or when CS2 is LOW

(deselected) or when CS1 is LOW, CS2 is HIGH and both

LBandUBareHIGH, thedeviceassumesastandbymode

at which the power dissipation can be reduced down with

CMOS input levels.

1.7V--2.2V V^DD(62WV6416ALL)

2.5V--3.6V V^DD(62WV6416BLL)

Easy memory expansion is provided by using Chip Enable

and Output Enable inputs. The active LOW Write Enable

(WE) controls both writing and reading of the memory. A

data byte allows Upper Byte (UB) and Lower Byte (LB)

access.

• Fully static operation: no clock or refresh

required

• Three state outputs

• Data control for upper and lower bytes

• Industrial temperature available

• 2CS Option Available

TheIS62WV6416ALLandIS62WV6416BLLarepackaged

intheJEDECstandard48-pinminiBGA(6mmx8mm)and

44-Pin TSOP (TYPE II).

• Lead-free available

FUNCTIONAL BLOCK DIAGRAM

64K x 16

MEMORY ARRAY

A0-A15

DECODER

GND

I/O0-I/O7

Lower Byte

I/O

DATA

CIRCUIT

COLUMN I/O

I/O8-I/O15

Upper Byte

CS2

CS1

CONTROL

CIRCUIT

without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to

obtain the latest version of this device specification before relying on any published information and before placing orders for products.

Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774

Rev. B

06/03/05

12 3 4 5 6 7...17

中文翻译

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与IS62WV6416ALL相关器件

型号	品牌	获取价格	描述	数据表
IS62WV6416ALL-55B	ISSI	获取价格	64K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM
IS62WV6416ALL-55B2	ISSI	获取价格	Standard SRAM, 64KX16, 55ns, CMOS, PBGA48, 6 X 8 MM, MINI, BGA-48
IS62WV6416ALL-55B2I	ISSI	获取价格	64K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM
IS62WV6416ALL-55BI	ISSI	获取价格	64K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM
IS62WV6416ALL-55BLI	ISSI	获取价格	64K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM
IS62WV6416ALL-55T	ISSI	获取价格	64K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM
IS62WV6416ALL-55TI	ISSI	获取价格	64K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM
IS62WV6416ALL-55TLI	ISSI	获取价格	64K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM
IS62WV6416BLL	ISSI	获取价格	64K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM
IS62WV6416BLL-45B	ISSI	获取价格	64K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM

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