Datasheet > 存储 > SRAM> IS62WV6416BLL-45BI

IS62WV6416BLL-45BI

更新时间： 2024-11-21 03:15:55

品牌	Logo	应用领域
美国芯成 - ISSI		/
页数	文件大小	规格书
17页	111K
描述
64K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

IS62WV6416BLL-45BI 数据手册

浏览型号IS62WV6416BLL-45BI的Datasheet PDF文件第2页

浏览型号IS62WV6416BLL-45BI的Datasheet PDF文件第3页

浏览型号IS62WV6416BLL-45BI的Datasheet PDF文件第4页

浏览型号IS62WV6416BLL-45BI的Datasheet PDF文件第5页

浏览型号IS62WV6416BLL-45BI的Datasheet PDF文件第6页

浏览型号IS62WV6416BLL-45BI的Datasheet PDF文件第7页

IS62WV6416ALL

IS62WV6416BLL

ISSI

64K x 16 LOW VOLTAGE,

ULTRA LOW POWER CMOS STATIC RAM

JUNE2005

FEATURES

DESCRIPTION

The ISSI IS62WV6416ALL/ IS62WV6416BLL are high-

speed, 1M bit static RAMs organized as 64K words by 16

bits. It is fabricated using ISSI's high-performance CMOS

technology. This highly reliable process coupled with

innovative circuit design techniques, yields high-

performance and low power consumption devices.

• High-speed access time: 45ns, 55ns

• CMOS low power operation:

30 mW (typical) operating

15 µW (typical) CMOS standby

• TTL compatible interface levels

• Single power supply

When CS1 is HIGH (deselected) or when CS2 is LOW

(deselected) or when CS1 is LOW, CS2 is HIGH and both

LBandUBareHIGH, thedeviceassumesastandbymode

at which the power dissipation can be reduced down with

CMOS input levels.

1.7V--2.2V V^DD(62WV6416ALL)

2.5V--3.6V V^DD(62WV6416BLL)

Easy memory expansion is provided by using Chip Enable

and Output Enable inputs. The active LOW Write Enable

(WE) controls both writing and reading of the memory. A

data byte allows Upper Byte (UB) and Lower Byte (LB)

access.

• Fully static operation: no clock or refresh

required

• Three state outputs

• Data control for upper and lower bytes

• Industrial temperature available

• 2CS Option Available

TheIS62WV6416ALLandIS62WV6416BLLarepackaged

intheJEDECstandard48-pinminiBGA(6mmx8mm)and

44-Pin TSOP (TYPE II).

• Lead-free available

FUNCTIONAL BLOCK DIAGRAM

64K x 16

MEMORY ARRAY

A0-A15

DECODER

GND

I/O0-I/O7

Lower Byte

I/O

DATA

CIRCUIT

COLUMN I/O

I/O8-I/O15

Upper Byte

CS2

CS1

CONTROL

CIRCUIT

without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to

obtain the latest version of this device specification before relying on any published information and before placing orders for products.

Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774

Rev. B

06/03/05

12 3 4 5 6 7...17

中文翻译

下载PDF

与IS62WV6416BLL-45BI相关器件

型号	品牌	获取价格	描述	数据表
IS62WV6416BLL-45BLI	ISSI	获取价格	Standard SRAM, 64KX16, 45ns, CMOS, PBGA48, 6 X 8 MM, LEAD FREE, MINI, BGA-48
IS62WV6416BLL-45T	ISSI	获取价格	64K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM
IS62WV6416BLL-45TI	ISSI	获取价格	64K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM
IS62WV6416BLL-55B	ISSI	获取价格	Standard SRAM, 64KX16, 55ns, CMOS, PBGA48, 6 X 8 MM, MINI, BGA-48
IS62WV6416BLL-55B2I	ISSI	获取价格	64K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM
IS62WV6416BLL-55BI	ISSI	获取价格	64K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM
IS62WV6416BLL-55BLI	ISSI	获取价格	64K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM
IS62WV6416BLL-55T	ISSI	获取价格	Standard SRAM, 64KX16, 55ns, CMOS, PDSO44, PLASTIC, TSOP2-44
IS62WV6416BLL-55TI	ISSI	获取价格	64K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM
IS62WV6416BLL-55TLI	ISSI	获取价格	64K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM

与IS62WV6416BLL-45BI相关文章

解析光耦仿真器：升级光耦合器技术的必要性
2024-11-18

27
英伟达新一代Blackwell GPU过热问题致交付延迟
2024-11-18

19
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

49
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

47

产品中心

服务支持

精选活动

关于我们

帮助中心

IS62WV6416BLL-45BI

IS62WV6416BLL-45BI 数据手册

与IS62WV6416BLL-45BI相关器件

与IS62WV6416BLL-45BI相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

IS62WV6416BLL-45BI

IS62WV6416BLL-45BI 数据手册

与IS62WV6416BLL-45BI相关器件

与IS62WV6416BLL-45BI相关文章

您还可以找

您在本页遇到什么问题？