5秒后页面跳转
IS62WV25616ALL-70BI PDF预览

IS62WV25616ALL-70BI

更新时间: 2024-11-24 04:44:47
品牌 Logo 应用领域
美国芯成 - ISSI 静态存储器
页数 文件大小 规格书
14页 112K
描述
256K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC SRAM

IS62WV25616ALL-70BI 数据手册

 浏览型号IS62WV25616ALL-70BI的Datasheet PDF文件第2页浏览型号IS62WV25616ALL-70BI的Datasheet PDF文件第3页浏览型号IS62WV25616ALL-70BI的Datasheet PDF文件第4页浏览型号IS62WV25616ALL-70BI的Datasheet PDF文件第5页浏览型号IS62WV25616ALL-70BI的Datasheet PDF文件第6页浏览型号IS62WV25616ALL-70BI的Datasheet PDF文件第7页 
®
IS62WV25616ALL  
IS62WV25616BLL  
ISSI  
256K x 16 LOW VOLTAGE,  
ULTRA LOW POWER CMOS STATIC SRAM  
MAY2005  
FEATURES  
DESCRIPTION  
TheISSIIS62WV25616ALL/IS62WV25616BLL are high-  
speed,lowpower,4MbitSRAMsorganizedas256Kwords  
by 16 bits. It is fabricated using ISSI's high-performance  
CMOS technology. This highly reliable process coupled  
with innovative circuit design techniques, yields high-  
performance and low power consumption devices.  
• High-speed access time: 55ns, 70ns  
• CMOS low power operation  
36 mW (typical) operating  
9 µW (typical) CMOS standby  
• TTL compatible interface levels  
• Single power supply  
WhenCS1isHIGH(deselected) orwhen CS1isLOWand  
both LB and UB are HIGH, the device assumes a standby  
modeatwhichthepowerdissipationcanbereduceddown  
with CMOS input levels.  
1.65V--2.2V VDD (IS62WV25616ALL)  
2.5V--3.6V VDD (IS62WV25616BLL)  
Easy memory expansion is provided by using Chip Enable  
and Output Enable inputs. The active LOW Write Enable  
(WE) controls both writing and reading of the memory. A  
data byte allows Upper Byte (UB) and Lower Byte (LB)  
access.  
• Fully static operation: no clock or refresh  
required  
• Three state outputs  
TheIS62WV25616ALL/IS62WV25616BLL arepackagedin  
the JEDEC standard 44-Pin TSOP (TYPE II) and 48-pin  
mini BGA (6mmx8mm).  
• Data control for upper and lower bytes  
• Industrial temperature available  
• Lead-free available  
FUNCTIONAL BLOCK DIAGRAM  
256K x 16  
MEMORY ARRAY  
A0-A17  
DECODER  
V
DD  
GND  
I/O0-I/O7  
Lower Byte  
I/O  
DATA  
COLUMN I/O  
CIRCUIT  
I/O8-I/O15  
Upper Byte  
CS1  
OE  
WE  
UB  
LB  
CONTROL  
CIRCUIT  
Copyright © 2005 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time  
without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to  
obtain the latest version of this device specification before relying on any published information and before placing orders for products.  
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774  
Rev. C  
1
05/02/05  

与IS62WV25616ALL-70BI相关器件

型号 品牌 获取价格 描述 数据表
IS62WV25616ALL-70T ISSI

获取价格

256K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC SRAM
IS62WV25616ALL-70TI ISSI

获取价格

256K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC SRAM
IS62WV25616BLL ISSI

获取价格

256K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC SRAM
IS62WV25616BLL-55B ISSI

获取价格

Standard SRAM, 256KX16, 55ns, CMOS, PBGA48, 6 X 8 MM, MINI, BGA-48
IS62WV25616BLL-55B2 ISSI

获取价格

Standard SRAM, 256KX16, 55ns, CMOS, PBGA48, 6 X 8 MM, MINI, BGA-48
IS62WV25616BLL-55B2I ISSI

获取价格

Standard SRAM, 256KX16, 55ns, CMOS, PBGA48, 6 X 8 MM, MINI, BGA-48
IS62WV25616BLL-55BI ISSI

获取价格

256K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC SRAM
IS62WV25616BLL-55BLI ISSI

获取价格

256K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC SRAM
IS62WV25616BLL-55BLI-TR ISSI

获取价格

IC SRAM 4MBIT 55NS 48MBGA
IS62WV25616BLL-55T ISSI

获取价格

256K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC SRAM