是否Rohs认证: | 符合 | 生命周期: | Active |
包装说明: | VFBGA, BGA48,6X8,30 | Reach Compliance Code: | compliant |
Factory Lead Time: | 8 weeks | 风险等级: | 2.24 |
最长访问时间: | 45 ns | I/O 类型: | COMMON |
JESD-30 代码: | R-PBGA-B48 | 长度: | 8 mm |
内存密度: | 16777216 bit | 内存集成电路类型: | STANDARD SRAM |
内存宽度: | 16 | 功能数量: | 1 |
端子数量: | 48 | 字数: | 1048576 words |
字数代码: | 1000000 | 工作模式: | ASYNCHRONOUS |
最高工作温度: | 85 °C | 最低工作温度: | -40 °C |
组织: | 1MX16 | 输出特性: | 3-STATE |
封装主体材料: | PLASTIC/EPOXY | 封装代码: | VFBGA |
封装等效代码: | BGA48,6X8,30 | 封装形状: | RECTANGULAR |
封装形式: | GRID ARRAY, VERY THIN PROFILE, FINE PITCH | 并行/串行: | PARALLEL |
电源: | 2.5/3.3 V | 认证状态: | Not Qualified |
座面最大高度: | 1 mm | 最大待机电流: | 0.000025 A |
最小待机电流: | 1.5 V | 子类别: | SRAMs |
最大压摆率: | 0.03 mA | 最大供电电压 (Vsup): | 3.6 V |
最小供电电压 (Vsup): | 2.2 V | 标称供电电压 (Vsup): | 3.3 V |
表面贴装: | YES | 技术: | CMOS |
温度等级: | INDUSTRIAL | 端子形式: | BALL |
端子节距: | 0.75 mm | 端子位置: | BOTTOM |
宽度: | 6 mm | Base Number Matches: | 1 |
型号 | 品牌 | 替代类型 | 描述 | 数据表 |
IS62WV102416EBLL-45BLI-TR | ISSI |
完全替代 |
IC SRAM 16M PARALLEL 48VFBGA |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IS62WV102416EBLL-45BLI-TR | ISSI |
获取价格 |
IC SRAM 16M PARALLEL 48VFBGA | |
IS62WV102416EBLL-55BLI | ISSI |
获取价格 |
Standard SRAM, 1MX16, 55ns, CMOS, PBGA48, 6 X 8 MM, LEAD FREE, MO-207, VFBGA-48 | |
IS62WV102416EBLL-55BLI-TR | ISSI |
获取价格 |
IC SRAM 16M PARALLEL 48VFBGA | |
IS62WV102416FALL-55TLI | ISSI |
获取价格 |
Standard SRAM, 1MX16, 55ns, CMOS, PDSO48, TSOP1-48 | |
IS62WV102416FBLL-55TLI | ISSI |
获取价格 |
Standard SRAM, 1MX16, 55ns, CMOS, PDSO48, TSOP1-48 | |
IS62WV10248ALL-70B | ISSI |
获取价格 |
Standard SRAM, 1MX8, 70ns, CMOS, PBGA48, 7.20 X 8.70 MM, MINI, BGA-48 | |
IS62WV10248ALL-70BI | ISSI |
获取价格 |
Standard SRAM, 1MX8, 70ns, CMOS, PBGA48, 7.20 X 8.70 MM, MINI, BGA-48 | |
IS62WV10248ALL-70T | ISSI |
获取价格 |
Standard SRAM, 1MX8, 70ns, CMOS, PDSO44, TSOP2-44 | |
IS62WV10248BLL | ISSI |
获取价格 |
1M x 8 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM | |
IS62WV10248BLL-55BI | ISSI |
获取价格 |
1M x 8 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM |