Datasheet > 存储 > SRAM> IS62LV12816L-100B

IS62LV12816L-100B

更新时间： 2024-01-24 08:20:43

品牌	Logo	应用领域
矽成 - ICSI		/
页数	文件大小	规格书
10页	463K
描述
128K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM

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IS62LV12816L-100B 数据手册

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IS62LV12816L

IS62LV12816LL

OPERATING RANGE

Range

Ambient Temperature

VCC

Commercial

0°C to +70°C

2.7V - 3.6V

Industrial

40°C to +85°C

2.7V - 3.6V

ABSOLUTE MAXIMUM RATINGS⁽¹⁾

Symbol Parameter

Value

Unit

VTERM

TBIAS

VCC

Terminal Voltage with Respect to GND

Temperature Under Bias

Vcc related to GND

0.5 to Vcc + 0.5

40 to +85

0.3 to +4.0

65 to +150

1.0

°C

TSTG

Storage Temperature

°C

Power Dissipation

Notes:

1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the

device. This is a stress rating only and functional operation of the device at these or any other conditions above

those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating

conditions for extended periods may affect reliability.

DC ELECTRICAL CHARACTERISTICS (Over Operating Range)

Symbol Parameter

Test Conditions

Min.

Max.

Unit

VOH

VOL

VIH

Output HIGH Voltage

VCC = Min., IOH

VCC = Min., IOL

2.1

Output LOW Voltage

Input HIGH Voltage

Input LOW Voltage⁽¹⁾

Input Leakage

2.2

0.2

VCC + 0.2

(1)

VIL

ILI

0.4

GND ≤ VIN ≤ VCC

GND ≤ VOUT ≤ VCC, OUTPUTS DISABLED

µA

ILO

Output Leakage

Notes:

1. V^IL(min.) = 2.0V for pulse width less than 10 ns.

CAPACITANCE⁽¹⁾

Symbol

CIN

Parameter

ConditionsMax.

VIN = 0V

Unit

Input Capacitance

Output Capacitance

COUT

VOUT = 0V

Notes:

1. Tested initially and after any design or process changes that may affect these parameters.

Integrated Circuit Solution Inc.

SR020-0C

1 234 5 6 7...10

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