Datasheet > 存储 > SRAM> IS62LV12816L-100B

IS62LV12816L-100B

更新时间： 2024-01-14 10:54:14

品牌	Logo	应用领域
矽成 - ICSI		/
页数	文件大小	规格书
10页	463K
描述
128K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM

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IS62LV12816L-100B 数据手册

IS62LV12816L

IS62LV12816LL

AC TEST LOADS

READ CYCLE NO.1^(1,2)(Address Controlled) (CE = OE = VIL, UB or LB = VIL)

ADDRESS

OHA

DATA VALID

DOUT

PREVIOUS DATA VALID

AC WAVEFORMS

READ CYCLE NO. 2^(1,3)(CS, OE, AND UB/LB Controlled)

ADDRESS

OHA

HZOE

DOE

LZOE

ACE

HZCE

LZCE

LB, UB

HZB

LZB

HIGH-Z

DOUT

DATA VALID

Notes:

1. WE is HIGH for a Read Cycle.

2. The device is continuously selected. OE, CE, UB, or LB = V^IL.

3. Address is valid prior to or coincident with CE LOW transitions.

Integrated Circuit Solution Inc.

SR020-0C

1...3 4 567 8 9 10

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型号	品牌	获取价格	描述	数据表
IS62LV12816L-100BI	ISSI	获取价格	128K x 16 CMOS STATIC RAM
IS62LV12816L-100BI	ICSI	获取价格	128K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM
IS62LV12816L-100T	ICSI	获取价格	128K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM
IS62LV12816L-100T	ISSI	获取价格	128K x 16 CMOS STATIC RAM
IS62LV12816L-100TI	ISSI	获取价格	128K x 16 CMOS STATIC RAM
IS62LV12816L-100TI	ICSI	获取价格	128K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM
IS62LV12816L-10TI	ISSI	获取价格	Standard SRAM, 128KX16, 100ns, CMOS, PDSO44, TSOP2-44
IS62LV12816L-120B	ISSI	获取价格	128K x 16 CMOS STATIC RAM
IS62LV12816L-120BI	ISSI	获取价格	128K x 16 CMOS STATIC RAM
IS62LV12816L-120T	ISSI	获取价格	128K x 16 CMOS STATIC RAM