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IS62LV12816L-55TI PDF预览

IS62LV12816L-55TI

更新时间: 2024-09-17 04:44:47
品牌 Logo 应用领域
矽成 - ICSI 存储内存集成电路静态存储器光电二极管
页数 文件大小 规格书
10页 463K
描述
128K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM

IS62LV12816L-55TI 技术参数

是否Rohs认证:不符合生命周期:Transferred
包装说明:TSOP, TSOP44,.46,32Reach Compliance Code:unknown
风险等级:5.88Is Samacsys:N
最长访问时间:55 nsI/O 类型:COMMON
JESD-30 代码:R-PDSO-G44JESD-609代码:e0
内存密度:2097152 bit内存集成电路类型:STANDARD SRAM
内存宽度:16端子数量:44
字数:131072 words字数代码:128000
工作模式:ASYNCHRONOUS最高工作温度:85 °C
最低工作温度:-40 °C组织:128KX16
输出特性:3-STATE封装主体材料:PLASTIC/EPOXY
封装代码:TSOP封装等效代码:TSOP44,.46,32
封装形状:RECTANGULAR封装形式:SMALL OUTLINE, THIN PROFILE
并行/串行:PARALLEL电源:3/3.3 V
认证状态:Not Qualified最小待机电流:1.5 V
子类别:SRAMs最大压摆率:0.045 mA
表面贴装:YES技术:CMOS
温度等级:INDUSTRIAL端子面层:Tin/Lead (Sn/Pb)
端子形式:GULL WING端子节距:0.8 mm
端子位置:DUALBase Number Matches:1

IS62LV12816L-55TI 数据手册

 浏览型号IS62LV12816L-55TI的Datasheet PDF文件第2页浏览型号IS62LV12816L-55TI的Datasheet PDF文件第3页浏览型号IS62LV12816L-55TI的Datasheet PDF文件第4页浏览型号IS62LV12816L-55TI的Datasheet PDF文件第5页浏览型号IS62LV12816L-55TI的Datasheet PDF文件第6页浏览型号IS62LV12816L-55TI的Datasheet PDF文件第7页 
IS62LV12816L  
IS62LV12816LL  
128K x 16 LOW VOLTAGE, ULTRA  
LOW POWER CMOS STATIC RAM  
FEATURES  
DESCRIPTION  
The ICSIIS62LV12816L and IS62LV12816LL are high-speed,  
2.097,152-bit static RAMs organized as 131,072 words by 16  
bits. They are fabricated using ICSI's high-performance CMOS  
technology. This highly reliable process coupled with innova-  
tive circuit design techniques, yields high-performance and  
low power consumption devices.  
• High-speed access times: 55, 70, 100 ns  
• CMOS low power operation  
-- 120 mW (typical) operating  
-- 6 µW (typical) CMOS standby  
• TTL compatible interface levels  
• Single 2.7V-3.6V Vcc power supply  
When CE is HIGH (deselected) or when CE is low and both LB  
and UB are HIGH, the device assumes a standby mode at  
which the power dissipation can be reduced by using CMOS  
input levels.  
• Fully static operation: no clock or refresh re-  
quired  
• Three state outputs  
Easy memory expansion is provided by using Chip Enable  
Output and Enable inputs, CE and OE. The active LOW Write  
Enable (WE) controls both writing and reading of the memory.  
A data byte allows Upper Byte (UB) and Lower Byte (LB)  
access.  
• Data control for upper and lower bytes  
• Industrial temperature available  
• Available in the 44-pin TSOP-2 and 48-pin  
6*8mm TF-BGA  
The IS62LV12816L and IS62LV12816LL are packaged in the  
JEDEC standare 44-pin 400mil TSOP-2 and 48-pin 6*8mm  
TF-BGA.  
FUNCTIONAL BLOCK DIAGRAM  
128K x 16  
MEMORY ARRAY  
A0-A16  
DECODER  
VCC  
GND  
I/O0-I/O7  
Lower Byte  
I/O  
DATA  
COLUMN I/O  
CIRCUIT  
I/O8-I/O15  
Upper Byte  
CE  
OE  
WE  
CONTROL  
CIRCUIT  
UB  
LB  
ICSI reserves the right to make changes to its products at any time without notice in order to improve design and supply the best possible product. We assume no responsibility for any errors  
which may appear in this publication. © Copyright 2000, Integrated Circuit Solution Inc.  
Integrated Circuit Solution Inc.  
SR020-0C  
1

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