Datasheet > IS62LV12816BL-55B

IS62LV12816BL-55B

更新时间： 2023-06-15 00:00:00

品牌	Logo	应用领域
美国芯成 - ISSI		静态存储器
页数	文件大小	规格书
10页	92K
描述
Standard SRAM, 128KX16, 55ns, CMOS, PBGA48, MINI, BGA-48

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IS62LV12816BL/LL

ISSI

AC TEST CONDITIONS

Parameter

Input Pulse Level

Input Rise and Fall Times

Unit

0.4V to 2.2V

5 ns

Input and Output Timing

and Reference Level

1.3V

Output Load

See Figures 1 and 2

AC TEST LOADS

3070 Ω

2.8V

OUTPUT

3150 Ω

30 pF

Including

jig and

5 pF

Including

jig and

scope

Figure 1

Figure 2

IS62LV12816BL POWER SUPPLY CHARACTERISTICS⁽¹⁾(Over Operating Range)

-55

-70

-100

Min. Max.

Symbol Parameter

TestConditions

CC = Max.,

OUT = 0 mA, f = fMAX

Min. Max.

Unit

ICC

VccDynamicOperating

SupplyCurrent

Com.

Ind.

—

TTLStandbyCurrent

(TTLInputs)

CC = Max.,

Com.

Ind.

—

0.4

1.0

—

0.4

1.0

—

0.4

1.0

IN = VIH or VIL

≥ VIH , f = 0

ULB Control

Vcc = Max., VIN = VIH or VIL

CE = VIL, f = 0, UB = VIH, LB = VIH

CMOSStandby

CC = Max.,

Com.

Ind.

—

µA

Current (CMOS Inputs)

≥

≤

CC – 0.2V,

CC – 0.2V, or

0.2V, f = 0

ULB Control

V^CC= Max., CE = VIL

VIN ≤ 0.2V, f = 0; UB / LB = VCC – 0.2V

Note:

1. At f = f^MAX, address and data inputs are cycling at the maximum frequency, f = 0 means no input lines change.

Integrated Silicon Solution, Inc. — 1-800-379-4774

PRELIMINARY INFORMATION Rev. 00B

02/29/00

1 2 345 6 7...10

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