Datasheet > IS62LV12816BL-55B

IS62LV12816BL-55B

更新时间： 2023-06-15 00:00:00

品牌	Logo	应用领域
美国芯成 - ISSI		静态存储器
页数	文件大小	规格书
10页	92K
描述
Standard SRAM, 128KX16, 55ns, CMOS, PBGA48, MINI, BGA-48

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IS62LV12816BL/LL

ISSI

OPERATING RANGE

Range

Ambient Temperature

VCC

Commercial

Industrial

0°C to +70°C

2.5V - 3.0V

–40°C to +85°C

ABSOLUTE MAXIMUM RATINGS⁽¹⁾

Symbol

VTERM

TBIAS

VCC

Parameter

Value

–0.5 to Vcc+0.5

–40 to +85

–0.3 to +4.0

–65 to +150

1.0

Unit

Terminal Voltage with Respect to GND

Temperature Under Bias

Vcc Related to GND

°C

TSTG

Storage Temperature

°C

Power Dissipation

Note:

1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the

device. This is a stress rating only and functional operation of the device at these or any other conditions above

those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum

rating conditions for extended periods may affect reliability.

DC ELECTRICAL CHARACTERISTICS (Over Operating Range)

Symbol Parameter

Test Conditions

Min.

2.0

—

Max.

Unit

VOH

VOL

VIH

Output HIGH Voltage

VCC = Min., IOH = –1 mA

VCC = Min., IOL = 2.1 mA

—

Output LOW Voltage

Input HIGH Voltage

Input LOW Voltage

Input Leakage

0.4

2.2

–0.2

–1

VCC + 0.2

(1)

VIL

0.4

ILI

GND ≤ VIN ≤ VCC

µA

ILO

Output Leakage

GND ≤ VOUT ≤ VCC, Outputs Disabled

–1

Notes:

1. V^IL(min.) = –2.0V for pulse width less than 10 ns.

CAPACITANCE⁽¹⁾

Symbol

Parameter

Conditions

VIN = 0V

Max.

Unit

CIN

Input Capacitance

Input/Output Capacitance

COUT

Note:

VOUT = 0V

1. Tested initially and after any design or process changes that may affect these parameters.

Integrated Silicon Solution, Inc. — 1-800-379-4774

PRELIMINARY INFORMATION Rev. 00B

02/29/00

1 234 5 6 7...10

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