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IS61WV10248EDBLL-10BLI PDF预览

IS61WV10248EDBLL-10BLI

更新时间： 2024-11-24 15:35:31
品牌 Logo 应用领域
美国芯成 - ISSI 静态存储器内存集成电路
页数 文件大小 规格书
18页 611K
描述
Standard SRAM, 1MX8, 10ns, CMOS, PBGA48, 6 X 8 MM, LEAD FREE, MO-207, TFBGA-48

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IS61WV10248EDBLL-10BLI 技术参数

是否Rohs认证： 符合生命周期：Active
包装说明：TFBGA, BGA48,6X8,30Reach Compliance Code：compliant
风险等级：2.24最长访问时间：10 ns
I/O 类型：COMMONJESD-30 代码：R-PBGA-B48
长度：8 mm内存密度：8388608 bit
内存集成电路类型：STANDARD SRAM内存宽度：8
功能数量：1端子数量：48
字数：1048576 words字数代码：1000000
工作模式：ASYNCHRONOUS最高工作温度：85 °C
最低工作温度：-40 °C组织：1MX8
输出特性：3-STATE封装主体材料：PLASTIC/EPOXY
封装代码：TFBGA封装等效代码：BGA48,6X8,30
封装形状：RECTANGULAR封装形式：GRID ARRAY, THIN PROFILE, FINE PITCH
并行/串行：PARALLEL电源：2.5/3.3 V
认证状态：Not Qualified座面最大高度：1.2 mm
最大待机电流：0.015 A最小待机电流：2 V
子类别：SRAMs最大压摆率：0.05 mA
最大供电电压 (Vsup)：3.6 V最小供电电压 (Vsup)：2.4 V
标称供电电压 (Vsup)：3 V表面贴装：YES
技术：CMOS温度等级：INDUSTRIAL
端子形式：BALL端子节距：0.75 mm
端子位置：BOTTOM宽度：6 mm
Base Number Matches：1

IS61WV10248EDBLL-10BLI 数据手册

 浏览型号IS61WV10248EDBLL-10BLI的Datasheet PDF文件第2页浏览型号IS61WV10248EDBLL-10BLI的Datasheet PDF文件第3页浏览型号IS61WV10248EDBLL-10BLI的Datasheet PDF文件第4页浏览型号IS61WV10248EDBLL-10BLI的Datasheet PDF文件第5页浏览型号IS61WV10248EDBLL-10BLI的Datasheet PDF文件第6页浏览型号IS61WV10248EDBLL-10BLI的Datasheet PDF文件第7页 
IS61WV10248EDBLL  
IS64WV10248EDBLL  
1M x 8 HIGH-SPEED ASYNCHRONOUS  
CMOS STATIC RAM WITH ECC  
FEBRUARY 2013  
FEATURES  
DESCRIPTION  
•ꢀ High-speedꢀaccessꢀtimes:ꢀ8,ꢀ10,ꢀ20ꢀns  
•ꢀ High-performance,ꢀlow-powerꢀCMOSꢀprocess  
•ꢀ Multipleꢀcenterꢀpowerꢀandꢀgroundꢀpinsꢀforꢀ  
greater noise immunity  
•ꢀ Easy memory expansion with CE and OE options  
•ꢀ CE power-down  
•ꢀ Fullyꢀstaticꢀoperation:ꢀnoꢀclockꢀorꢀrefreshꢀ  
required  
•ꢀ TTLꢀcompatibleꢀinputsꢀandꢀoutputs  
•ꢀ Packagesꢀavailable:  
TheꢀISSIꢀIS61/64WV10248EDBLLꢀareꢀveryꢀhigh-speed,ꢀ  
lowꢀpower,ꢀ1M-wordꢀbyꢀ8-bitꢀCMOSꢀstaticꢀRAM.ꢀTheꢀ  
IS61/64WV10248EDBLLꢀareꢀfabricatedꢀusingꢀISSI's  
high-performanceꢀCMOSꢀtechnology.ꢀThisꢀhighlyꢀreli-  
able process coupled with innovative circuit design  
techniques, yields higher performance and low power  
consumption devices.  
WhenꢀCEꢀisꢀHIGHꢀ(deselected),ꢀtheꢀdeviceꢀassumesꢀ  
a standby mode at which the power dissipation can be  
reducedꢀdownꢀwithꢀCMOSꢀinputꢀlevels.  
TheꢀIS61/64WV10248EDBLLꢀoperateꢀfromꢀaꢀsingleꢀꢀ  
powerꢀsupplyꢀandꢀallꢀinputsꢀareꢀTTL-compatible.ꢀ  
–
ꢀ48-ballꢀminiBGAꢀꢀ(6mmꢀxꢀ8mm)  
ꢀ –ꢀꢀ44-pinꢀTSOPꢀ(TypeꢀII)ꢀ  
TheꢀIS61/64WV10248EDBLLꢀareꢀavailableꢀinꢀ48ꢀballꢀ  
miniꢀBGAꢀ(6mmꢀxꢀ8mm)ꢀandꢀꢀ44-pinꢀTSOPꢀ(TypeꢀII)ꢀ  
packages.  
•ꢀ IndustrialꢀandꢀAutomotiveꢀTemperatureꢀSupport  
•ꢀ Lead-freeꢀavailable  
FUNCTIONAL BLOCK DIAGRAM  
ECC Array  
(1024Kx4)  
Memory Array  
(1024Kx8)  
A0-A19  
Decoder  
8
4
8
8
12  
I/O Data  
Circuit  
ECC  
IO0-7  
Column I/O  
/CE  
/OE  
/WE  
Control  
Circuit  
Copyright © 2013 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time without  
notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to obtain the lat-  
est version of this device specification before relying on any published information and before placing orders for products.  
Integrated Silicon Solution, Inc. does not recommend the use of any of its products in life support applications where the failure or malfunction of the product can reason-  
ably be expected to cause failure of the life support system or to significantly affect its safety or effectiveness. Products are not authorized for use in such applications  
unless Integrated Silicon Solution, Inc. receives written assurance to its satisfaction, that:  
a.) the risk of injury or damage has been minimized;  
b.) the user assume all such risks; and  
c.) potential liability of Integrated Silicon Solution, Inc is adequately protected under the circumstances  
Integrated Silicon Solution, Inc. — www.issi.com  
1
Rev. A  
02/20/2013  
1234567...18

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