Datasheet > IS61WV12816BLL

IS61WV12816BLL

更新时间： 2024-11-20 02:55:23

品牌	Logo	应用领域
美国芯成 - ISSI		/
页数	文件大小	规格书
15页	120K
描述
128K x 16 HIGH-SPEED CMOS STATIC RAM

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IS61WV12816BLL 数据手册

IS61WV12816BLL

IS64WV12816BLL

ISSI

128K x 16 HIGH-SPEED CMOS STATIC RAM

FEBRUARY2006

FEATURES

DESCRIPTION

The ISSI IS61WV12816BLL and IS64WV12816BLL are

high-speed,2,097,152-bitstaticRAMorganizedas131,072

words by 16 bits. They are fabricated using ISSI's high-

performanceCMOStechnology.Thishighlyreliableprocess

coupled with innovative circuit design techniques, yields

accesstimesasfastas12nswithlowpowerconsumption.

• High-speed access time:

12 ns: 3.3V + 10%

15 ns: 2.5V-3.6V

• Operating Current: 25mA (typ.)

• Stand by Current: 400µA(typ.)

• TTL and CMOS compatible interface levels

When CE is HIGH (deselected), the device assumes a

standby mode at which the power dissipation can be

reduced down with CMOS input levels.

• Fully static operation: no clock or refresh

required

EasymemoryexpansionisprovidedbyusingChipEnable

and Output Enable inputs, CE and OE. The active LOW

Write Enable (WE) controls both writing and reading of the

memory. A data byte allows Upper Byte (UB) and Lower

Byte (LB) access.

• Three state outputs

• Data control for upper and lower bytes

• Industrial and Automotive temperatures avail-

able

TheIS61WV12816BLLandIS64WV12816BLLarepackaged

in the JEDEC standard 44-pin TSOP (Type II) and 48-pin

mini BGA (6mm x 8mm).

• Lead-free available

FUNCTIONAL BLOCK DIAGRAM

128Kx16

MEMORY ARRAY

A0-A16

DECODER

VDD

GND

I/O0-I/O7

Lower Byte

I/O

DATA

CIRCUIT

COLUMN I/O

I/O8-I/O15

Upper Byte

CONTROL

CIRCUIT

Copyright © 2006 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time without notice. ISSI assumes no liability

arisingoutoftheapplicationoruseofanyinformation, productsorservicesdescribedherein. Customersareadvisedtoobtainthelatestversionofthisdevicespecificationbeforerelyingonany

publishedinformationandbeforeplacingordersforproducts.

Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774

Rev. C

02/03/06

12 3 4 5 6 7...15

中文翻译

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与IS61WV12816BLL相关器件

型号	品牌	获取价格	描述	数据表
IS61WV12816BLL-12BI	ISSI	获取价格	128K x 16 HIGH-SPEED CMOS STATIC RAM
IS61WV12816BLL-12BLI	ISSI	获取价格	128K x 16 HIGH-SPEED CMOS STATIC RAM
IS61WV12816BLL-12TI	ISSI	获取价格	128K x 16 HIGH-SPEED CMOS STATIC RAM
IS61WV12816BLL-12TLI	ISSI	获取价格	128K x 16 HIGH-SPEED CMOS STATIC RAM
IS61WV12816DALL	ISSI	获取价格	128K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM
IS61WV12816DALL/DALS	ISSI	获取价格	128K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM
IS61WV12816DALL_11	ISSI	获取价格	128K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM
IS61WV12816DALL-20BI	ISSI	获取价格	128K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM
IS61WV12816DALL-20TI	ISSI	获取价格	128K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM
IS61WV12816DALL-20TI-TR	ISSI	获取价格	128K X 16 APPLICATION SPECIFIC SRAM, 20ns, PDSO44, PLASTIC, TSOP2-44

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