Datasheet > IS61WV12816EDBLL

IS61WV12816EDBLL

更新时间： 2024-11-20 12:23:03

品牌	Logo	应用领域
美国芯成 - ISSI		/
页数	文件大小	规格书
14页	729K
描述
128K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH ECC

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中文翻译

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IS61WV12816EDBLL 数据手册

IS61WV12816EDBLL

IS64WV12816EDBLL

128K x 16 HIGH SPEED ASYNCHRONOUS

CMOS STATIC RAM WITH ECC

OCTOBER 2011

DESCRIPTION

FEATURES

Theꢀ ISSIꢀ IS61/64WV12816EDBLLꢀ isꢀ aꢀ ꢀ high-speed,ꢀ

2,097,152-bitꢀstaticꢀRAMsꢀorganizedꢀasꢀ131,072ꢀwordsꢀ

byꢀ16ꢀbits.ꢀItꢀisꢀfabricatedꢀusingꢀISSI'sꢀhigh-performanceꢀ

CMOSꢀtechnology.ꢀThisꢀhighlyꢀreliableꢀprocessꢀcoupledꢀ

withꢀ innovativeꢀ circuitꢀ designꢀ techniques,ꢀ yieldsꢀ high-

performanceꢀandꢀlowꢀpowerꢀconsumptionꢀdevices.

•ꢀ High-speedꢀaccessꢀtime:ꢀ8,ꢀ10ꢀns

•ꢀ LowꢀActiveꢀPower:ꢀ85ꢀmWꢀ(typical)

•ꢀ LowꢀStandbyꢀPower:ꢀ7ꢀmWꢀ(typical)ꢀ

CMOSꢀstandby

•ꢀ Singleꢀpowerꢀsupply

ꢀ —ꢀꢀV^ddꢀ2.4Vꢀtoꢀ3.6Vꢀ(10ꢀns)

—ꢀꢀV^ddꢀ3.3Vꢀ ꢀ10%ꢀ(8ꢀns)

WhenꢀCEꢀisꢀHIGHꢀ(deselected),ꢀtheꢀdeviceꢀassumesꢀaꢀ

standbyꢀmodeꢀatꢀwhichꢀtheꢀpowerꢀdissipationꢀcanꢀbeꢀre-

ducedꢀdownꢀwithꢀCMOSꢀinputꢀlevels.

•ꢀ Fullyꢀstaticꢀoperation:ꢀnoꢀclockꢀorꢀrefreshꢀꢀ

required

EasyꢀmemoryꢀexpansionꢀisꢀprovidedꢀbyꢀusingꢀChipꢀEnableꢀ

andꢀOutputꢀEnableꢀinputs,ꢀCEꢀandꢀOE.ꢀTheꢀactiveꢀLOWꢀ

WriteꢀEnableꢀ(WE)ꢀcontrolsꢀbothꢀwritingꢀandꢀreadingꢀofꢀtheꢀ

memory.ꢀꢀAꢀdataꢀbyteꢀallowsꢀUpperꢀByteꢀ(UB)ꢀandꢀLowerꢀ

Byteꢀ(LB)ꢀaccess.

•ꢀ Threeꢀstateꢀoutputs

•ꢀ Dataꢀcontrolꢀforꢀupperꢀandꢀlowerꢀbytes

•ꢀ IndustrialꢀandꢀAutomotiveꢀtemperatureꢀsupport

•ꢀ Lead-freeꢀavailable

•ꢀ ErrorꢀDetectionꢀandꢀErrorꢀCorrection

TheꢀIS61/64WV12816EDBLLꢀisꢀꢀpackagedꢀinꢀtheꢀJEDECꢀ

standardꢀ44-pinꢀTSOP-IIꢀꢀandꢀ48-pinꢀMiniꢀBGAꢀ(6mmꢀxꢀ

8mm).

FUNCTIONAL BLOCK DIAGRAM

Memory

Lower IO

Array-

Memory

Upper IO

Array-

A0-A16

ECC

Array-

128K

ECC

Array-

128K

Decoder

128Kx8

IO0-7

ECC

I/O Data

Circuit

Column I/O

IO8-15

/CE

/OE

/WE

/UB

/LB

Control

Circuit

notice.ꢀꢀꢀISSIꢀassumesꢀnoꢀliabilityꢀarisingꢀoutꢀofꢀtheꢀapplicationꢀorꢀuseꢀofꢀanyꢀinformation,ꢀproductsꢀorꢀservicesꢀdescribedꢀherein.ꢀCustomersꢀareꢀadvisedꢀtoꢀobtainꢀtheꢀlat-

estꢀversionꢀofꢀthisꢀdeviceꢀspeciﬁcationꢀbeforeꢀrelyingꢀonꢀanyꢀpublishedꢀinformationꢀandꢀbeforeꢀplacingꢀordersꢀforꢀproducts.

IntegratedꢀSiliconꢀSolution,ꢀInc.ꢀdoesꢀnotꢀrecommendꢀtheꢀuseꢀofꢀanyꢀofꢀitsꢀproductsꢀinꢀlifeꢀsupportꢀapplicationsꢀwhereꢀtheꢀfailureꢀorꢀmalfunctionꢀofꢀtheꢀproductꢀcanꢀreason-

ablyꢀbeꢀexpectedꢀtoꢀcauseꢀfailureꢀofꢀtheꢀlifeꢀsupportꢀsystemꢀorꢀtoꢀsigniﬁcantlyꢀaffectꢀitsꢀsafetyꢀorꢀeffectiveness.ꢀProductsꢀareꢀnotꢀauthorizedꢀforꢀuseꢀinꢀsuchꢀapplicationsꢀ

unlessꢀIntegratedꢀSiliconꢀSolution,ꢀInc.ꢀreceivesꢀwrittenꢀassuranceꢀtoꢀitsꢀsatisfaction,ꢀthat:

a.)ꢀtheꢀriskꢀofꢀinjuryꢀorꢀdamageꢀhasꢀbeenꢀminimized;

b.)ꢀtheꢀuserꢀassumeꢀallꢀsuchꢀrisks;ꢀand

c.)ꢀpotentialꢀliabilityꢀofꢀIntegratedꢀSiliconꢀSolution,ꢀIncꢀisꢀadequatelyꢀprotectedꢀunderꢀtheꢀcircumstancesꢀꢀ

Integrated Silicon Solution, Inc. — www.issi.comꢀ

Rev. A

09/29/2011

12 3 4 5 6 7...14

中文翻译

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与IS61WV12816EDBLL相关器件

型号	品牌	获取价格	描述	数据表
IS61WV12816EDBLL-10TLI	ISSI	获取价格	Standard SRAM, 128KX16, 10ns, CMOS, PDSO44, 0.400 INCH, LEAD FREE, TSOP2-44
IS61WV12824-8BL	ISSI	获取价格	Standard SRAM, 128KX24, 8ns, CMOS, PBGA119, BGA-119
IS61WV12824-8BL-TR	ISSI	获取价格	Standard SRAM,
IS61WV1288EEBLL	ISSI	获取价格	256K x 8 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH ECC
IS61WV1288EEBLL-10BI	ISSI	获取价格	256K x 8 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH ECC
IS61WV1288EEBLL-10BLI	ISSI	获取价格	256K x 8 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH ECC
IS61WV1288EEBLL-10HLI	ISSI	获取价格	Standard SRAM, 128KX8, 10ns, CMOS, PDSO32, 8 X 13.40 MM, LEAD FREE, MO-183, TSOP1-32
IS61WV1288EEBLL-10KLI	ISSI	获取价格	256K x 8 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH ECC
IS61WV1288EEBLL-10TI	ISSI	获取价格	256K x 8 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH ECC
IS61WV1288EEBLL-10TLI	ISSI	获取价格	256K x 8 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH ECC

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