Datasheet > 暂无类别数据> IS61WV20488BLL-10TI

IS61WV20488BLL-10TI

更新时间： 2024-09-23 02:55:23

品牌	Logo	应用领域
美国芯成 - ISSI		/
页数	文件大小	规格书
20页	118K
描述
2M x 8 HIGH-SPEED CMOS STATIC RAM

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替代型号

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IS61WV20488BLL-10TI 数据手册

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IS61WV20488ALL

IS61WV20488BLL

IS64WV20488BLL

ISSI

PRELIMINARYINFORMATION

JANUARY2006

2M x 8 HIGH-SPEED CMOS STATIC RAM

FEATURES

DESCRIPTION

• High-speed access times:

8, 10, 20 ns

• High-performance, low-power CMOS process

• Multiple center power and ground pins for

greater noise immunity

• Easy memory expansion with CE and OE

TheISSIIS61WV20488ALL/BLLandIS64WV20488BLL

are very high-speed, low power, 2M-word by 8-bit CMOS

static RAM. The IS61WV20488ALL/BLL and

IS64WV20488BLLarefabricatedusingISSI'shigh-

performance CMOS technology. This highly reliable

process coupled with innovative circuit design tech-

niques, yields higher performance and low power con-

sumption devices.

options

• CE power-down

• Fully static operation: no clock or refresh

required

When CE is HIGH (deselected), the device assumes a

standby mode at which the power dissipation can be

reduced down with CMOS input levels.

• TTL compatible inputs and outputs

• Single power supply

TheIS61WV20488ALL/BLLandIS64WV20488BLL

operate from a single power supply and all inputs are

TTL-compatible.

– VDD 1.65V to 2.2V (IS61WV20488ALL)

speed = 20ns for Vcc = 1.65V to 2.2V

– VDD 2.4V to 3.6V (IS61/64WV20488BLL)

speed = 10ns for Vcc = 2.4V to 3.6V

speed = 8ns for Vcc = 3.3V + 5%

• Packages available:

TheIS61WV20488ALL/BLLandIS64WV20488BLLare

available in 48 ball mini BGA and 44-pin TSOP (Type II)

packages.

–

48-ball miniBGA (9mm x 11mm)

– 44-pin TSOP (Type II)

• Industrial and Automotive Temperature Support

• Lead-free available

FUNCTIONAL BLOCK DIAGRAM

2M X 8

MEMORY ARRAY

A0-A20

DECODER

VDD

GND

I/O

DATA

COLUMN I/O

I/O0-I/O7

CIRCUIT

CONTROL

CIRCUIT

without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to

obtain the latest version of this device specification before relying on any published information and before placing orders for products.

Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774

Rev. 00C

01/09/06

12 3 4 5 6 7...20

中文翻译

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IS61WV20488BLL-10TI 替代型号

型号	品牌	替代类型	描述	数据表
BS62LV1600ECP70	BSI	功能相似	Very Low Power CMOS SRAM 2M X 8 bit
BS62LV1600ECG55	BSI	功能相似	Very Low Power CMOS SRAM 2M X 8 bit
IS62WV20488BLL-25TLI	ISSI	功能相似	2M x 8 HIGH-SPEED LOW POWER CMOS STATIC RAM

与IS61WV20488BLL-10TI相关器件

型号	品牌	获取价格	描述	数据表
IS61WV20488BLL-10TI-TR	ISSI	获取价格	Standard SRAM, 2MX8, 10ns, CMOS, PDSO44,
IS61WV20488BLL-10TLI	ISSI	获取价格	2M x 8 HIGH-SPEED CMOS STATIC RAM
IS61WV20488BLL-10TLI-TR	ISSI	获取价格	Standard SRAM, 2MX8, 10ns, CMOS, PDSO44
IS61WV20488CLL-8M	ISSI	获取价格	Standard SRAM, 2MX8, 8ns, CMOS, PBGA48, 9 X 11 MM, MINI, BGA-48
IS61WV20488CLL-8T	ISSI	获取价格	Standard SRAM, 2MX8, 8ns, CMOS, PDSO44, PLASTIC, TSOP2-44
IS61WV20488FALL-20TLI	ISSI	获取价格	Standard SRAM, 2MX8, 20ns, CMOS, PDSO44, TSOP2-44
IS61WV25616ALL	ISSI	获取价格	256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM
IS61WV25616ALL/ALS	ISSI	获取价格	256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM
IS61WV25616ALL-20BI	ISSI	获取价格	256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM
IS61WV25616ALL-20BI-TR	ISSI	获取价格	Standard SRAM, 256KX16, 20ns, CMOS, PBGA48

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