Datasheet > IS61WV12816DBLS-35TLI

IS61WV12816DBLS-35TLI

更新时间： 2024-11-25 05:19:27

品牌	Logo	应用领域
美国芯成 - ISSI		静态存储器光电二极管
页数	文件大小	规格书
21页	456K
描述
Standard SRAM, 128KX16, 35ns, CMOS, PDSO44, LEAD FREE, PLASTIC, TSOP2-44

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IS61WV12816DALL/DALS

IS61WV12816DBLL/DBLS

IS64WV12816DBLL/DBLS

128K x 16 HIGH SPEED ASYNCHRONOUS

CMOS STATIC RAM

JANUARY 2013

DESCRIPTION

FEATURES

TheꢀISSIꢀIS61WV12816DAxx/DBxxꢀandꢀIS64WV12816D-

Bxxꢀareꢀhigh-speed,ꢀ2,097,152-bitꢀstaticꢀRAMsꢀorganizedꢀ

asꢀ131,072ꢀwordsꢀbyꢀ16ꢀbits.ꢀItꢀisꢀfabricatedꢀusingꢀISSI's

high-performanceꢀCMOSꢀtechnology.ꢀThisꢀhighlyꢀreliableꢀ

process coupled with innovative circuit design techniques,

yields high-performance and low power consumption

devices.

HIGH SPEED: (IS61/64WV12816DALL/DBLL)

•ꢀ High-speedꢀaccessꢀtime:ꢀ8,ꢀ10,ꢀ12,ꢀ20ꢀns

•ꢀ LowꢀActiveꢀPower:ꢀ135ꢀmWꢀ(typical)

•ꢀ LowꢀStandbyꢀPower:ꢀ12ꢀµWꢀ(typical)

CMOS standby

LOW POWER: (IS61/64WV12816DALS/DBLS)

•ꢀ High-speedꢀaccessꢀtime:ꢀ25,ꢀ35ꢀns

•ꢀ LowꢀActiveꢀPower:ꢀ55ꢀmWꢀ(typical)

When CE is HIGH (deselected), the device assumes a

standby mode at which the power dissipation can be re-

duced down with CMOS input levels.

•ꢀ LowꢀStandbyꢀPower:ꢀ12ꢀµWꢀ(typical)

CMOS standby

EasyꢀmemoryꢀexpansionꢀisꢀprovidedꢀbyꢀusingꢀChipꢀEnableꢀ

andꢀOutputꢀEnableꢀinputs,ꢀCEꢀandꢀOE.ꢀTheꢀactiveꢀLOWꢀ

Write Enable (WE) controls both writing and reading of the

memory. A data byte allows Upper Byte (UB) and Lower

Byte (LB) access.

•ꢀ Singleꢀpowerꢀsupply

— Vddꢀ1.65Vꢀtoꢀ2.2Vꢀ(IS61WV12816DAxx)

— Vddꢀ2.4Vꢀtoꢀ3.6Vꢀ(IS61/64WV12816DBxx)

•ꢀ Fullyꢀstaticꢀoperation:ꢀnoꢀclockꢀorꢀrefreshꢀ

Theꢀ IS61WV12816DAxx/DBxxꢀ andꢀ IS64WV12816DBxxꢀ

areꢀꢀpackagedꢀinꢀtheꢀJEDECꢀstandardꢀ44-pinꢀTSOPꢀTypeꢀ

IIꢀꢀandꢀ48-pinꢀMiniꢀBGAꢀ(6mmꢀxꢀ8mm).

required

•ꢀ Threeꢀstateꢀoutputs

•ꢀ Dataꢀcontrolꢀforꢀupperꢀandꢀlowerꢀbytes

•ꢀ IndustrialꢀandꢀAutomotiveꢀtemperatureꢀsupport

•ꢀ Lead-freeꢀavailable

FUNCTIONAL BLOCK DIAGRAM

128K x 16

MEMORY ARRAY

A0-A16

DECODER

VDD

GND

I/O0-I/O7

Lower Byte

I/O

DATA

COLUMN I/O

CIRCUIT

I/O8-I/O15

Upper Byte

CONTROL

CIRCUIT

out notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to obtain

the latest version of this device speciﬁcation before relying on any published information and before placing orders for products.

Integrated Silicon Solution, Inc. — www.issi.com

Rev. E

01/10/2013

12 3 4 5 6 7...21

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与IS61WV12816DBLS-35TLI相关器件

型号	品牌	获取价格	描述	数据表
IS61WV12816EDBLL	ISSI	获取价格	128K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH ECC
IS61WV12816EDBLL-10TLI	ISSI	获取价格	Standard SRAM, 128KX16, 10ns, CMOS, PDSO44, 0.400 INCH, LEAD FREE, TSOP2-44
IS61WV12824-8BL	ISSI	获取价格	Standard SRAM, 128KX24, 8ns, CMOS, PBGA119, BGA-119
IS61WV12824-8BL-TR	ISSI	获取价格	Standard SRAM,
IS61WV1288EEBLL	ISSI	获取价格	256K x 8 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH ECC
IS61WV1288EEBLL-10BI	ISSI	获取价格	256K x 8 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH ECC
IS61WV1288EEBLL-10BLI	ISSI	获取价格	256K x 8 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH ECC
IS61WV1288EEBLL-10HLI	ISSI	获取价格	Standard SRAM, 128KX8, 10ns, CMOS, PDSO32, 8 X 13.40 MM, LEAD FREE, MO-183, TSOP1-32
IS61WV1288EEBLL-10KLI	ISSI	获取价格	256K x 8 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH ECC
IS61WV1288EEBLL-10TI	ISSI	获取价格	256K x 8 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH ECC

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