Datasheet > IS61WV12816DBLL/DBLS

IS61WV12816DBLL/DBLS

更新时间： 2024-11-25 01:18:31

品牌	Logo	应用领域
美国芯成 - ISSI		/
页数	文件大小	规格书
21页	201K
描述
128K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM

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中文翻译

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IS61WV12816DALL/DALS

IS61WV12816DBLL/DBLS

IS64WV12816DBLL/DBLS

128K x 16 HIGH SPEED ASYNCHRONOUS

CMOS STATIC RAM

JULY2011

DESCRIPTION

FEATURES

TheISSIIS61WV12816DAxx/DBxxandIS64WV12816DBxx

are high-speed, 2,097,152-bit static RAMs organized as

131,072 words by 16 bits. It is fabricated usingISSI's high-

performance CMOS technology. This highly reliable pro-

cess coupled with innovative circuit design techniques,

yields high-performance and low power consumption de-

vices.

HIGH SPEED: (IS61/64WV12816DALL/DBLL)

• High-speed access time: 8, 10, 12, 20 ns

• Low Active Power: 135 mW (typical)

• Low Standby Power: 12 μW (typical)

CMOS standby

LOW POWER: (IS61/64WV12816DALS/DBLS)

• High-speed access time: 25, 35 ns

• Low Active Power: 55 mW (typical)

When CE is HIGH (deselected), the device assumes a

standby mode at which the power dissipation can be

reduced down with CMOS input levels.

• Low Standby Power: 12 μW (typical)

CMOS standby

Easy memory expansion is provided by using Chip Enable

and Output Enable inputs, CE and OE. The active LOW

Write Enable (WE) controls both writing and reading of the

memory. A data byte allows Upper Byte (UB) and Lower

Byte (LB) access.

• Single power supply

— V^DD1.65V to 2.2V (IS61WV12816DAxx)

— V^DD2.4V to 3.6V (IS61/64WV12816DBxx)

• Fully static operation: no clock or refresh

required

TheIS61WV12816DAxx/DBxxandIS64WV12816DBxxare

packagedintheJEDECstandard44-pinTSOPTypeII and

48-pin Mini BGA (6mm x 8mm).

• Three state outputs

• Data control for upper and lower bytes

• Industrial and Automotive temperature support

• Lead-free available

FUNCTIONAL BLOCK DIAGRAM

128K x 16

MEMORY ARRAY

A0-A16

DECODER

VDD

GND

I/O0-I/O7

Lower Byte

I/O

DATA

COLUMN I/O

CIRCUIT

I/O8-I/O15

Upper Byte

CONTROL

CIRCUIT

without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to

obtain the latest version of this device specification before relying on any published information and before placing orders for products.

Integrated Silicon Solution, Inc. — www.issi.com

Rev. D

06/21/2011

12 3 4 5 6 7...21

中文翻译

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与IS61WV12816DBLL/DBLS相关器件

型号	品牌	获取价格	描述	数据表
IS61WV12816DBLL-10BI	ISSI	获取价格	128K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM
IS61WV12816DBLL-10BI-TR	ISSI	获取价格	Application Specific SRAM, 128KX16, 10ns, CMOS, PBGA48, 6 X 8 MM, MINI, BGA-48
IS61WV12816DBLL-10BLI	ISSI	获取价格	128K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM
IS61WV12816DBLL-10BLI-TR	ISSI	获取价格	Application Specific SRAM, 128KX16, 10ns, CMOS, PBGA48, 6 X 8 MM, LEAD FREE, MINI, BGA-48
IS61WV12816DBLL-10TI	ISSI	获取价格	128K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM
IS61WV12816DBLL-10TI-TR	ISSI	获取价格	128K X 16 APPLICATION SPECIFIC SRAM, 10ns, PDSO44, PLASTIC, TSOP2-44
IS61WV12816DBLL-10TL	ISSI	获取价格	128K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM
IS61WV12816DBLL-10TLI	ISSI	获取价格	128K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM
IS61WV12816DBLL-10TL-TR	ISSI	获取价格	Application Specific SRAM, 128KX16, 10ns, CMOS, PDSO44, LEAD FREE, PLASTIC, TSOP2-44
IS61WV12816DBLS	ISSI	获取价格	128K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM

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