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IS61NVP204818-166B3I PDF预览

IS61NVP204818-166B3I

更新时间： 2024-11-18 15:35:31
品牌 Logo 应用领域
美国芯成 - ISSI 静态存储器内存集成电路
页数 文件大小 规格书
22页 221K
描述
ZBT SRAM, 2MX18, 3.5ns, CMOS, PBGA165, PLASTIC, BGA-165

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IS61NVP204818-166B3I 技术参数

是否无铅： 含铅是否Rohs认证： 不符合
生命周期：Obsolete零件包装代码：BGA
包装说明：PLASTIC, BGA-165针数：165
Reach Compliance Code：compliantECCN代码：3A991.B.2.A
HTS代码：8542.32.00.41风险等级：5.82
最长访问时间：3.5 ns其他特性：PIPELINED ARCHITECTURE
JESD-30 代码：R-PBGA-B165JESD-609代码：e0
长度：15 mm内存密度：37748736 bit
内存集成电路类型：ZBT SRAM内存宽度：18
功能数量：1端子数量：165
字数：2097152 words字数代码：2000000
工作模式：SYNCHRONOUS最高工作温度：85 °C
最低工作温度：-40 °C组织：2MX18
封装主体材料：PLASTIC/EPOXY封装代码：TBGA
封装形状：RECTANGULAR封装形式：GRID ARRAY, THIN PROFILE
并行/串行：PARALLEL峰值回流温度（摄氏度）：NOT SPECIFIED
认证状态：Not Qualified座面最大高度：1.2 mm
最大供电电压 (Vsup)：2.625 V最小供电电压 (Vsup)：2.375 V
标称供电电压 (Vsup)：2.5 V表面贴装：YES
技术：CMOS温度等级：INDUSTRIAL
端子面层：Tin/Lead (Sn/Pb)端子形式：BALL
端子节距：1 mm端子位置：BOTTOM
处于峰值回流温度下的最长时间：NOT SPECIFIED宽度：13 mm
Base Number Matches：1

IS61NVP204818-166B3I 数据手册

 浏览型号IS61NVP204818-166B3I的Datasheet PDF文件第2页浏览型号IS61NVP204818-166B3I的Datasheet PDF文件第3页浏览型号IS61NVP204818-166B3I的Datasheet PDF文件第4页浏览型号IS61NVP204818-166B3I的Datasheet PDF文件第5页浏览型号IS61NVP204818-166B3I的Datasheet PDF文件第6页浏览型号IS61NVP204818-166B3I的Datasheet PDF文件第7页 
IS61NLP102436/IS61NVP102436  
IS61NLP204818/IS61NVP204818  
1Mb x 36 and 2Mb x 18  
36Mb, PIPELINE 'NO WAIT' STATE BUS SRAM  
PRELIMINARYINFORMATION  
JUNE 2007  
FEATURES  
DESCRIPTION  
The 36 Meg 'NLP/NVP' product family feature high-speed,  
low-power synchronous static RAMs designed to provide  
a burstable, high-performance, 'no wait' state, device for  
networking and communications applications. They are  
organizedas1Mwordsby36bitsand2M wordsby18bits,  
fabricated with ISSI's advanced CMOS technology.  
• 100 percent bus utilization  
• No wait cycles between Read and Write  
• Internal self-timed write cycle  
• Individual Byte Write Control  
• Single R/W (Read/Write) control pin  
Incorporating a 'no wait' state feature, wait cycles are  
eliminated when the bus switches from read to write, or  
write to read. This device integrates a 2-bit burst counter,  
high-speed SRAM core, and high-drive capability outputs  
into a single monolithic circuit.  
• Clock controlled, registered address,  
data and control  
• Interleaved or linear burst sequence control using  
MODE input  
Allsynchronousinputspassthroughregistersarecontrolled  
byapositive-edge-triggeredsingleclockinput.Operations  
may be suspended and all synchronous inputs ignored  
when Clock Enable, CKE is HIGH. In this state the internal  
device will hold their previous values.  
• Three chip enables for simple depth expansion  
and address pipelining  
• Power Down mode  
• Common data inputs and data outputs  
• CKE pin to enable clock and suspend operation  
All Read, Write and Deselect cycles are initiated by the  
ADV input. When the ADV is HIGH the internal burst  
counter is incremented. New external addresses can be  
loaded when ADV is LOW.  
• JEDEC 100-pin TQFP and 165-ball PBGA  
packages  
Write cycles are internally self-timed and are initiated by  
the rising edge of the clock inputs and when WE is LOW.  
Separate byte enables allow individual bytes to be written.  
• Power supply:  
NVP: VDD 2.5V ( 5ꢀ), VDDQ 2.5V ( 5ꢀ)  
NLP: VDD 3.3V ( 5ꢀ), VDDQ 3.3V/2.5V ( 5ꢀ)  
A burst mode pin (MODE) defines the order of the burst  
sequence.WhentiedHIGH,theinterleavedburstsequence  
is selected. When tied LOW, the linear burst sequence is  
selected.  
• Industrial temperature available  
• Lead-free available  
FAST ACCESS TIME  
Symbol  
tKQ  
Parameter  
-200  
3.1  
5
-166  
3.5  
6
Units  
ns  
Clock Access Time  
CycleTime  
tKC  
ns  
Frequency  
200  
166  
MHz  
Copyright © 2006 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time without notice. ISSI assumes no liability  
arisingoutoftheapplicationoruseofanyinformation, productsorservicesdescribedherein. Customersareadvisedtoobtainthelatestversionofthisdevicespecificationbeforerelyingonany  
publishedinformationandbeforeplacingordersforproducts.  
Integrated Silicon Solution, Inc.  
1
Rev. 00A  
05/02/07  
1234567...22

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与IS61NVP204818-166B3I相关器件

型号 品牌 获取价格 描述 数据表
IS61NVP204818A ISSI

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 		1Mb x 36 and 2Mb x 18 STATE BUS SRAM
IS61NVP204818A-166B3 ISSI

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 		1Mb x 36 and 2Mb x 18 STATE BUS SRAM
IS61NVP204818A-166B3I ISSI

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 		1Mb x 36 and 2Mb x 18 STATE BUS SRAM
IS61NVP204818A-166TQ ISSI

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 		1Mb x 36 and 2Mb x 18 STATE BUS SRAM
IS61NVP204818A-166TQI ISSI

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 		1Mb x 36 and 2Mb x 18 STATE BUS SRAM
IS61NVP204818A-166TQL ISSI

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 		1Mb x 36 and 2Mb x 18 STATE BUS SRAM
IS61NVP204818A-166TQLI ISSI

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 		Standard SRAM, 2MX18, 3.5ns, CMOS, PQFP100, TQFP-100
IS61NVP204818B-200TQL ISSI

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 		ZBT SRAM, 2MX18, 3.1ns, CMOS, PQFP100, 14 X 20 MM, 1.40 MM HEIGHT, LEAD FREE, TQFP-100
IS61NVP204818B-200TQLI ISSI

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 		ZBT SRAM, 2MX18, 3.1ns, CMOS, PQFP100, 14 X 20 MM, 1.40 MM HEIGHT, LEAD FREE, TQFP-100
IS61NVP204818B-200TQLI-TR ISSI

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 		IC SRAM 36MBIT 200MHZ 100LQFP

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