Datasheet > 存储 > SRAM> IS61LV632A-6PQ

IS61LV632A-6PQ

更新时间： 2024-02-22 14:58:19

品牌	Logo	应用领域
美国芯成 - ISSI		存储内存集成电路静态存储器
页数	文件大小	规格书
16页	122K
描述
32K x 32 SYNCHRONOUS FAST STATIC RAM

阅读下载

中文翻译

获取价格

技术参数
数据手册

如果您发现信息不准确，欢迎纠错

IS61LV632A-6PQ 技术参数

是否无铅：	含铅	是否Rohs认证：	不符合
生命周期：	Obsolete	零件包装代码：	QFP
包装说明：	TQFP-100	针数：	100
Reach Compliance Code：	compliant	ECCN代码：	3A991.B.2.B
HTS代码：	8542.32.00.41	风险等级：	5.85
最长访问时间：	6 ns	其他特性：	SELF-TIMED WRITE CYCLE; POWER DOWN OPTION
I/O 类型：	COMMON	JESD-30 代码：	R-PQFP-G100
JESD-609代码：	e0	长度：	20 mm
内存密度：	1048576 bit	内存集成电路类型：	CACHE SRAM
内存宽度：	32	功能数量：	1
端子数量：	100	字数：	32768 words
字数代码：	32000	工作模式：	SYNCHRONOUS
最高工作温度：	85 °C	最低工作温度：	-40 °C
组织：	32KX32	输出特性：	3-STATE
封装主体材料：	PLASTIC/EPOXY	封装代码：	LQFP
封装等效代码：	QFP100,.63X.87	封装形状：	RECTANGULAR
封装形式：	FLATPACK, LOW PROFILE	并行/串行：	PARALLEL
峰值回流温度（摄氏度）：	240	电源：	2.5/3.3,3.3 V
认证状态：	Not Qualified	座面最大高度：	1.6 mm
最大待机电流：	0.02 A	最小待机电流：	3.14 V
子类别：	SRAMs	最大压摆率：	0.17 mA
最大供电电压 (Vsup)：	3.465 V	最小供电电压 (Vsup)：	3.135 V
标称供电电压 (Vsup)：	3.3 V	表面贴装：	YES
技术：	CMOS	温度等级：	INDUSTRIAL
端子面层：	Tin/Lead (Sn/Pb)	端子形式：	GULL WING
端子节距：	0.65 mm	端子位置：	QUAD
处于峰值回流温度下的最长时间：	30	宽度：	14 mm
Base Number Matches：	1

IS61LV632A-6PQ 数据手册

IS61LV632A

32K x 32 SYNCHRONOUS FAST STATIC RAM

ISSI

APRIL 2001

FEATURES

• Fast access time:

DESCRIPTION

The ISSI IS61LV632A is a high-speed, low-power synchro-

nous static RAM designed to provide a burstable, high-

performance, secondary cache for the i486™, Pentium™,

680X0™, and PowerPC™ microprocessors. It is organized

as 32,768 words by 32 bits, fabricated with ISSI's advanced

CMOStechnology.Thedeviceintegratesa2-bitburstcounter,

high-speed SRAM core, and high-drive capability outputs into

asinglemonolithiccircuit.Allsynchronousinputspassthrough

registers controlled by a positive-edge-triggered single clock

input.

– 4 ns-125 MHz; 5 ns-100 MHz;

6 ns-83 MHz; 7 ns-75 MHz; 8 ns-66 MHz

• Internal self-timed write cycle

• Individual Byte Write Control and Global Write

• Clock controlled, registered address, data and

control

• Pentium™ or linear burst sequence control

using MODE input

Write cycles are internally self-timed and are initiated by the

rising edge of the clock input. Write cycles can be from one to

four bytes wide as controlled by the write control inputs.

• Three chip enables for simple depth expansion

and address pipelining

• Common data inputs and data outputs

• Power-down control by ZZ input

Separate byte enables allow individual bytes to be written.

BW1 controls DQ1-DQ8, BW2 controls DQ9-DQ16, BW3

controlsDQ17-DQ24,BW4controlsDQ25-DQ32,conditioned

byBWEbeingLOW.ALOWonGWinputwouldcauseallbytes

to be written.

• JEDEC 100-Pin TQFP and PQFP package

• 3.3V Vcc and 2.5V V^CCQfor 2.5V I/Os

• Two Clock enables and one Clock disable to

eliminate multiple bank bus contention.

Bursts can be initiated with either ADSP (Address Status

Processor) or ADSC (Address Status Cache Controller) input

pins. Subsequent burst addresses can be generated inter-

nally by the IS61LV632A and controlled by the ADV (burst

address advance) input pin.

• Control pins mode upon power-up:

– MODE in interleave burst mode

– ZZ in normal operation mode

These control pins can be connected to GNDQ

or VCCQ to alter their power-up state

Asynchronoussignalsincludeoutputenable(OE),sleepmode

input(ZZ), clock(CLK)andburstmodeinput(MODE). AHIGH

input on the ZZ pin puts the SRAM in the power-down state.

When ZZ is pulled LOW (or no connect), the SRAM normally

operates after three cycles of the wake-up period. A LOW

input, i.e., GNDQ, on MODE pin selects LINEAR Burst. A VCCQ

(or no connect) on MODE pin selects INTERLEAVED Burst.

ISSI reserves the right to make changes to its products at any time without notice in order to improve design and supply the best possible product. We assume no responsibility for any

Integrated Silicon Solution, Inc. — 1-800-379-4774

Rev. A

04/17/01

12 3 4 5 6 7...16

中文翻译

下载PDF

与IS61LV632A-6PQ相关器件

型号	品牌	获取价格	描述	数据表
IS61LV632A-6PQI	ISSI	获取价格	32K x 32 SYNCHRONOUS FAST STATIC RAM
IS61LV632A-6TQ	ISSI	获取价格	32K x 32 SYNCHRONOUS FAST STATIC RAM
IS61LV632A-6TQI	ISSI	获取价格	32K x 32 SYNCHRONOUS FAST STATIC RAM
IS61LV632A-7PQ	ISSI	获取价格	32K x 32 SYNCHRONOUS FAST STATIC RAM
IS61LV632A-7PQI	ISSI	获取价格	32K x 32 SYNCHRONOUS FAST STATIC RAM
IS61LV632A-7TQ	ISSI	获取价格	32K x 32 SYNCHRONOUS FAST STATIC RAM
IS61LV632A-7TQI	ISSI	获取价格	32K x 32 SYNCHRONOUS FAST STATIC RAM
IS61LV632A-8PQ	ISSI	获取价格	32K x 32 SYNCHRONOUS FAST STATIC RAM
IS61LV632A-8PQI	ISSI	获取价格	32K x 32 SYNCHRONOUS FAST STATIC RAM
IS61LV632A-8TQ	ISSI	获取价格	32K x 32 SYNCHRONOUS FAST STATIC RAM

产品中心

服务支持

精选活动

关于我们

帮助中心

IS61LV632A-6PQ

IS61LV632A-6PQ 技术参数

IS61LV632A-6PQ 数据手册

与IS61LV632A-6PQ相关器件

与IS61LV632A-6PQ相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

IS61LV632A-6PQ

IS61LV632A-6PQ 技术参数

IS61LV632A-6PQ 数据手册

与IS61LV632A-6PQ相关器件

与IS61LV632A-6PQ相关文章

您还可以找

您在本页遇到什么问题？