5秒后页面跳转
IS61LV6416 PDF预览

IS61LV6416

更新时间: 2024-02-24 10:27:05
品牌 Logo 应用领域
美国芯成 - ISSI /
页数 文件大小 规格书
16页 113K
描述
64K x 16 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY

IS61LV6416 数据手册

 浏览型号IS61LV6416的Datasheet PDF文件第2页浏览型号IS61LV6416的Datasheet PDF文件第3页浏览型号IS61LV6416的Datasheet PDF文件第4页浏览型号IS61LV6416的Datasheet PDF文件第5页浏览型号IS61LV6416的Datasheet PDF文件第6页浏览型号IS61LV6416的Datasheet PDF文件第7页 
®
IS61LV6416  
IS61LV6416L  
ISSI  
64K x 16 HIGH-SPEED CMOS STATIC RAM  
WITH 3.3V SUPPLY  
OCTOBER2003  
FEATURES  
DESCRIPTION  
The ISSI IS61LV6416/IS61LV6416L is a high-speed,  
1,048,576-bitstaticRAMorganizedas65,536wordsby16  
bits. It is fabricated using ISSI's high-performance CMOS  
technology. This highly reliable process coupled with  
innovative circuit design techniques, yields access times  
as fast as 8 ns with low power consumption.  
• High-speed access time: 8, 10, 12 ns  
• CMOS low power operation  
— 61LV6416:  
75 mW (typical) operating current  
0.5 mW (typical) standby current  
— 61LV6416L:  
When CE is HIGH (deselected), the device assumes a  
standby mode at which the power dissipation can be  
reduced down with CMOS input levels.  
65 mW (typical) operating current  
50 µW (typical) standby current  
• TTL compatible interface levels  
• Single 3.3V power supply  
Easy memory expansion is provided by using Chip  
Enable and Output Enable inputs, CE and OE. The active  
LOW Write Enable (WE) controls both writing and reading  
of the memory. A data byte allows Upper Byte (UB) and  
Lower Byte (LB) access.  
• Fully static operation: no clock or refresh  
required  
• Three state outputs  
TheIS61LV6416/IS61LV6416LispackagedintheJEDEC  
standard 44-pin 400-mil SOJ, 44-pin TSOP-II, and 48-pin  
mini BGA (6mm x 8mm).  
• Data control for upper and lower bytes  
• Industrial temperature available  
FUNCTIONAL BLOCK DIAGRAM  
64K x 16  
MEMORY ARRAY  
A0-A15  
DECODER  
VDD  
GND  
I/O0-I/O7  
Lower Byte  
I/O  
DATA  
COLUMN I/O  
CIRCUIT  
I/O8-I/O15  
Upper Byte  
CE  
OE  
WE  
CONTROL  
CIRCUIT  
UB  
LB  
Copyright © 2003 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time without notice. ISSI assumes no liability  
arisingoutoftheapplicationoruseofanyinformation, productsorservicesdescribedherein. Customersareadvisedtoobtainthelatestversionofthisdevicespecificationbeforerelyingonany  
publishedinformationandbeforeplacingordersforproducts.  
Integrated Silicon Solution, Inc.  
Rev. C  
1
10/14/03  

与IS61LV6416相关器件

型号 品牌 获取价格 描述 数据表
IS61LV6416-10 ICSI

获取价格

64K X 16 HIGH SPEED CMOS STATIC RAM WITH 3.3 V SUPPLY
IS61LV6416-10B ICSI

获取价格

64K X 16 HIGH SPEED CMOS STATIC RAM WITH 3.3 V SUPPLY
IS61LV6416-10B ISSI

获取价格

Standard SRAM, 64KX16, 10ns, CMOS, PBGA48, 6 X 8 MM, MINI, BGA-48
IS61LV6416-10BI ICSI

获取价格

64K X 16 HIGH SPEED CMOS STATIC RAM WITH 3.3 V SUPPLY
IS61LV6416-10BI ISSI

获取价格

64K x 16 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY
IS61LV6416-10BLI ISSI

获取价格

IC SRAM 1M PARALLEL 48MINIBGA
IS61LV6416-10BLI-TR ISSI

获取价格

IC SRAM 1M PARALLEL 48MINIBGA
IS61LV6416-10K ICSI

获取价格

64K X 16 HIGH SPEED CMOS STATIC RAM WITH 3.3 V SUPPLY
IS61LV6416-10K ISSI

获取价格

64K x 16 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY
IS61LV6416-10KI ICSI

获取价格

64K X 16 HIGH SPEED CMOS STATIC RAM WITH 3.3 V SUPPLY