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IS61LV6416-10KLI PDF预览

IS61LV6416-10KLI

更新时间: 2024-02-25 09:08:15
品牌 Logo 应用领域
美国芯成 - ISSI 静态存储器光电二极管内存集成电路
页数 文件大小 规格书
16页 134K
描述
Standard SRAM, 64KX16, 10ns, CMOS, PDSO44, LEAD FREE, 0.400 INCH, PLASTIC, MS-027, SOJ-44

IS61LV6416-10KLI 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Not Recommended零件包装代码:SOJ
包装说明:SOJ, SOJ44,.44针数:44
Reach Compliance Code:compliantECCN代码:3A991.B.2.B
HTS代码:8542.32.00.41Factory Lead Time:8 weeks
风险等级:7.91最长访问时间:10 ns
I/O 类型:COMMONJESD-30 代码:R-PDSO-J44
JESD-609代码:e3长度:28.575 mm
内存密度:1048576 bit内存集成电路类型:STANDARD SRAM
内存宽度:16湿度敏感等级:3
功能数量:1端子数量:44
字数:65536 words字数代码:64000
工作模式:ASYNCHRONOUS最高工作温度:85 °C
最低工作温度:-40 °C组织:64KX16
输出特性:3-STATE封装主体材料:PLASTIC/EPOXY
封装代码:SOJ封装等效代码:SOJ44,.44
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
并行/串行:PARALLEL峰值回流温度(摄氏度):260
电源:3.3 V认证状态:Not Qualified
座面最大高度:3.75 mm最大待机电流:0.01 A
最小待机电流:3.14 V子类别:SRAMs
最大压摆率:0.13 mA最大供电电压 (Vsup):3.63 V
最小供电电压 (Vsup):3.135 V标称供电电压 (Vsup):3.3 V
表面贴装:YES技术:CMOS
温度等级:INDUSTRIAL端子面层:Matte Tin (Sn) - annealed
端子形式:J BEND端子节距:1.27 mm
端子位置:DUAL处于峰值回流温度下的最长时间:40
宽度:10.16 mmBase Number Matches:1

IS61LV6416-10KLI 数据手册

 浏览型号IS61LV6416-10KLI的Datasheet PDF文件第2页浏览型号IS61LV6416-10KLI的Datasheet PDF文件第3页浏览型号IS61LV6416-10KLI的Datasheet PDF文件第4页浏览型号IS61LV6416-10KLI的Datasheet PDF文件第5页浏览型号IS61LV6416-10KLI的Datasheet PDF文件第6页浏览型号IS61LV6416-10KLI的Datasheet PDF文件第7页 
®
IS61LV6416  
IS61LV6416L  
ISSI  
64K x 16 HIGH-SPEED CMOS STATIC RAM  
WITH 3.3V SUPPLY  
NOVEMBER2005  
FEATURES  
DESCRIPTION  
The ISSI IS61LV6416/IS61LV6416L is a high-speed,  
1,048,576-bitstaticRAMorganizedas65,536wordsby16  
bits. It is fabricated using ISSI's high-performance CMOS  
technology. This highly reliable process coupled with  
innovative circuit design techniques, yields access times  
as fast as 8 ns with low power consumption.  
• High-speed access time: 8, 10, 12 ns  
• CMOS low power operation  
— 61LV6416:  
75 mW (typical) operating current  
0.5 mW (typical) standby current  
— 61LV6416L:  
When CE is HIGH (deselected), the device assumes a  
standby mode at which the power dissipation can be  
reduced down with CMOS input levels.  
65 mW (typical) operating current  
50 µW (typical) standby current  
• TTL compatible interface levels  
• Single 3.3V power supply  
Easy memory expansion is provided by using Chip  
Enable and Output Enable inputs, CE and OE. The active  
LOW Write Enable (WE) controls both writing and reading  
of the memory. A data byte allows Upper Byte (UB) and  
Lower Byte (LB) access.  
• Fully static operation: no clock or refresh  
required  
• Three state outputs  
TheIS61LV6416/IS61LV6416LispackagedintheJEDEC  
standard 44-pin 400-mil SOJ, 44-pin TSOP-II, and 48-pin  
mini BGA (6mm x 8mm).  
• Data control for upper and lower bytes  
• Industrial temperature available  
• Lead-free available  
FUNCTIONAL BLOCK DIAGRAM  
64K x 16  
MEMORY ARRAY  
A0-A15  
DECODER  
VDD  
GND  
I/O0-I/O7  
Lower Byte  
I/O  
DATA  
COLUMN I/O  
CIRCUIT  
I/O8-I/O15  
Upper Byte  
CE  
OE  
WE  
CONTROL  
CIRCUIT  
UB  
LB  
Copyright © 2005 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time without notice. ISSI assumes no liability  
arisingoutoftheapplicationoruseofanyinformation, productsorservicesdescribedherein. Customersareadvisedtoobtainthelatestversionofthisdevicespecificationbeforerelyingonany  
publishedinformationandbeforeplacingordersforproducts.  
Integrated Silicon Solution, Inc.  
1
Rev. I  
11/22/05  

IS61LV6416-10KLI 替代型号

型号 品牌 替代类型 描述 数据表
CY7C1021DV33-10VXIT CYPRESS

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Standard SRAM, 64KX16, 10ns, CMOS, PDSO44, 0.400 INCH, ROHS COMPLIANT, SOJ-44
CY7C1021DV33-10VXI CYPRESS

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1-Mbit (64K x 16) Static RAM
CY7C1021BNV33L-10VXC CYPRESS

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