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IS61LV6416-15K PDF预览

IS61LV6416-15K

更新时间: 2024-09-26 23:01:19
品牌 Logo 应用领域
矽成 - ICSI /
页数 文件大小 规格书
8页 451K
描述
64K X 16 HIGH SPEED CMOS STATIC RAM WITH 3.3 V SUPPLY

IS61LV6416-15K 数据手册

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IS61LV6416  
64K x 16 HIGH-SPEED CMOS STATIC RAM  
WITH 3.3V SUPPLY  
FEATURES  
DESCRIPTION  
The ICSI IS61LV6416 is a high-speed, 1,048,576-bit static  
RAM organized as 65,536 words by 16 bits. It is fabricated  
using ICSI's high-performance CMOS technology. This highly  
reliable process coupled with innovative circuit design  
techniques, yields access times as fast as 8 ns with low power  
consumption.  
• High-speed access time: 8, 10, 12, and 15 ns  
• CMOS low power operation  
— 250 mW (typical) operating  
— 250 µW (typical) standby  
• TTL compatible interface levels  
• Single 3.3V power supply  
When CE is HIGH (deselected), the device assumes a standby  
mode at which the power dissipation can be reduced down with  
CMOS input levels.  
• Fully static operation: no clock or refresh  
required  
• Three state outputs  
Easy memory expansion is provided by using Chip Enable and  
Output Enable inputs, CE and OE. The active LOW Write  
Enable (WE) controls both writing and reading of the memory.  
A data byte allows Upper Byte (UB) and Lower Byte (LB)  
access.  
• Data control for upper and lower bytes  
• Industrial temperature available  
The IS61LV6416 is packaged in the JEDEC standard 44-pin  
400mil SOJ, 44-pin 400mil TSOP-2, and 48-pin 6*8mm TF-  
BGA.  
FUNCTIONAL BLOCK DIAGRAM  
64K x 16  
MEMORY ARRAY  
A0-A15  
DECODER  
VCC  
GND  
I/O0-I/O7  
Lower Byte  
I/O  
DATA  
COLUMN I/O  
CIRCUIT  
I/O8-I/O15  
Upper Byte  
CE  
OE  
WE  
CONTROL  
CIRCUIT  
UB  
LB  
ICSI reserves the right to make changes to its products at any time without notice in order to improve design and supply the best possible product. We assume no responsibility for any errors  
which may appear in this publication. © Copyright 2000, Integrated Circuit Solution Inc.  
Integrated Circuit Solution Inc.  
SR013-0C  
1

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