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IS61C256AH-15TI PDF预览

IS61C256AH-15TI

更新时间: 2024-11-27 22:48:03
品牌 Logo 应用领域
美国芯成 - ISSI /
页数 文件大小 规格书
8页 64K
描述
32K x 8 HIGH-SPEED CMOS STATIC RAM

IS61C256AH-15TI 数据手册

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®
ISSI  
IS61C256AH  
32K x 8 HIGH-SPEED CMOS STATIC RAM  
MAY 1999  
FEATURES  
DESCRIPTION  
The ISSI IS61C256AH is a very high-speed, low power,  
32,768 word by 8-bit static RAMs. They are fabricated using  
ISSI's high-performance CMOS technology. This highly reli-  
able process coupled with innovative circuit design tech-  
niques, yields access times as fast as 10 ns maximum.  
• High-speed access time: 10, 12, 15, 20, 25 ns  
• Low active power: 400 mW (typical)  
• Low standby power  
— 250 µW (typical) CMOS standby  
— 55 mW (typical) TTL standby  
WhenCEisHIGH(deselected), thedeviceassumesastandby  
mode at which the power dissipation can be reduced down to  
250 µW (typical) with CMOS input levels.  
• Fully static operation: no clock or refresh  
required  
• TTL compatible inputs and outputs  
• Single 5V power supply  
Easy memory expansion is provided by using an active LOW  
ChipEnable(CE)inputandanactiveLOWOutputEnable(OE)  
input. The active LOW Write Enable (WE) controls both writing  
and reading of the memory.  
The IS61C256AH is pin compatible with other 32K x 8 SRAMs  
and are available in 28-pin PDIP, SOJ, and TSOP (Type I)  
packages.  
FUNCTIONAL BLOCK DIAGRAM  
32K X 8  
MEMORY ARRAY  
A0-A14  
DECODER  
VCC  
GND  
I/O  
DATA  
COLUMN I/O  
I/O0-I/O7  
CIRCUIT  
CE  
CONTROL  
CIRCUIT  
OE  
WE  
ISSI reserves the right to make changes to its products at any time without notice in order to improve design and supply the best possible product. We assume no responsibility for any errors which  
may appear in this publication. © Copyright 1999, Integrated Silicon Solution, Inc.  
Integrated Silicon Solution, Inc. — 1-800-379-4774  
SR020-1O  
05/24/99  
1

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