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IS46TR16256A-125KBLA1 PDF预览

IS46TR16256A-125KBLA1

更新时间： 2024-10-28 20:59:39
品牌 Logo 应用领域
美国芯成 - ISSI 时钟动态存储器双倍数据速率内存集成电路
页数 文件大小 规格书
88页 2897K
描述
DDR DRAM, 256MX16, 0.1ns, CMOS, PBGA96, FBGA-96

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IS46TR16256A-125KBLA1 技术参数

是否Rohs认证： 符合生命周期：End Of Life
包装说明：FBGA-96Reach Compliance Code：compliant
Factory Lead Time：8 weeks风险等级：5.62
访问模式：MULTI BANK PAGE BURST最长访问时间：0.1 ns
其他特性：PROGRAMMABLE CAS LATENCY; AUTO/SELF REFRESH最大时钟频率 (fCLK)：800 MHz
I/O 类型：COMMON交错的突发长度：4,8
JESD-30 代码：R-PBGA-B96长度：13 mm
内存密度：4294967296 bit内存集成电路类型：DDR DRAM
内存宽度：16功能数量：1
端口数量：1端子数量：96
字数：268435456 words字数代码：256000000
工作模式：SYNCHRONOUS最高工作温度：85 °C
最低工作温度：-40 °C组织：256MX16
输出特性：3-STATE封装主体材料：PLASTIC/EPOXY
封装代码：TFBGA封装等效代码：BGA96,9X16,32
封装形状：RECTANGULAR封装形式：GRID ARRAY, THIN PROFILE, FINE PITCH
电源：1.5 V认证状态：Not Qualified
刷新周期：8192筛选级别：AEC-Q100
座面最大高度：1.2 mm自我刷新：YES
连续突发长度：4,8最大待机电流：0.018 A
子类别：DRAMs最大压摆率：0.29 mA
最大供电电压 (Vsup)：1.575 V最小供电电压 (Vsup)：1.425 V
标称供电电压 (Vsup)：1.5 V表面贴装：YES
技术：CMOS温度等级：INDUSTRIAL
端子形式：BALL端子节距：0.8 mm
端子位置：BOTTOM宽度：9 mm
Base Number Matches：1

IS46TR16256A-125KBLA1 数据手册

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IS43/46TR16256A, IS43/46TR16256AL,  
IS43/46TR85120A, IS43/46TR85120AL  
512Mx8, 256Mx16 4Gb DDR3 SDRAM  
JUNE 2014  
FEATURES  
Standard Voltage: VDD and VDDQ = 1.5V ± 0.075V  
Refresh Interval:  
Low Voltage (L): VDD and VDDQ = 1.35V + 0.1V, -0.067V  
Backward compatible to 1.5V  
7.8 us (8192 cycles/64 ms) Tc= -40°C to 85°C  
3.9 us (8192 cycles/32 ms) Tc= 85°C to 105°C  
High speed data transfer rates with system  
frequency up to 1066 MHz  
Partial Array Self Refresh  
8 internal banks for concurrent operation  
8n-Bit pre-fetch architecture  
Asynchronous RESET pin  
TDQS (Termination Data Strobe) supported (x8  
only)  
Programmable CAS Latency  
OCD (Off-Chip Driver Impedance Adjustment)  
Dynamic ODT (On-Die Termination)  
Driver strength : RZQ/7, RZQ/6 (RZQ = 240 Ω)  
Write Leveling  
Programmable Additive Latency: 0, CL-1,CL-2  
Programmable CAS WRITE latency (CWL) based  
on tCK  
Programmable Burst Length: 4 and 8  
Programmable Burst Sequence: Sequential or  
Interleave  
Operating temperature:  
Commercial (TC = 0°C to +95°C)  
Industrial (TC = -40°C to +95°C)  
Automotive, A1 (TC = -40°C to +95°C)  
Automotive, A2 (TC = -40°C to +105°C)  
BL switch on the fly  
Auto Self Refresh(ASR)  
Self Refresh Temperature(SRT)  
OPTIONS  
ADDRESS TABLE  
Parameter  
Configuration:  
512Mx8  
A0-A15  
A0-A9  
BA0-2  
1KB  
256Mx16  
A0-A14  
A0-A9  
BA0-2  
2KB  
512Mx8  
256Mx16  
Row Addressing  
Column Addressing  
Bank Addressing  
Package:  
96-ball FBGA (9mm x 13mm) for x16  
78-ball FBGA (9mm x 10.5mm) for x8  
Page size  
Auto Precharge  
Addressing  
A10/AP  
A10/AP  
BL switch on the fly  
A12/BC#  
A12/BC#  
SPEED BIN  
Speed Option  
15H  
125K  
107M  
093N  
Units  
JEDEC Speed Grade  
DDR3-1333H  
DDR3-1600K  
DDR3-1866M  
DDR3-2133M  
CL-nRCD-nRP  
tRCD,tRP(min)  
9-9-9  
13.5  
11-11-11  
13.75  
13-13-13  
13.91  
14-14-14  
13.09  
tCK  
ns  
Note:Faster speed options are backward compatible to slower speed options.  
Copyright © 2014 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time  
without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised  
to obtain the latest version of this device specification before relying on any published information and before placing orders for products.  
Integrated Silicon Solution, Inc. does not recommend the use of any of its products in life support applications where the failure or malfunction of the product  
can reasonably be expected to cause failure of the life support system or to significantly affect its safety or effectiveness. Products are not authorized for use  
in such applications unless Integrated Silicon Solution, Inc. receives written assurance to its satisfaction, that:  
a.) the risk of injury or damage has been minimized;  
b.) the user assume all such risks; and  
c.) potential liability of Integrated Silicon Solution, Inc is adequately protected under the circumstances  
Integrated Silicon Solution, Inc. – www.issi.com –  
1
Rev. A  
06/10/2014  
1234567...88

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IS46TR16256A-125KBLA2 ISSI

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IS46TR16256A-15HBLA1 ISSI

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 		IC DRAM 4G PARALLEL 96TWBGA
IS46TR16256A-15HBLA1-TR ISSI

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IS46TR16256A-15HBLA2 ISSI

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 		IC DRAM 4G PARALLEL 96TWBGA
IS46TR16256A-15HBLA2-TR ISSI

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 		IC DRAM 4G PARALLEL 96TWBGA
IS46TR16256AL-107MBLA1 ISSI

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 		512Mx8, 256Mx16 4Gb DDR3 SDRAM
IS46TR16256AL-107MBLA2 ISSI

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 		512Mx8, 256Mx16 4Gb DDR3 SDRAM
IS46TR16256AL-125KBLA1 ISSI

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 		DDR DRAM, 256MX16, 0.1ns, CMOS, PBGA96, 9 X 13 MM, 1.20 MM HEIGHT, LEAD FREE, FBGA-96
IS46TR16256AL-125KBLA2 ISSI

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 		DDR DRAM, 256MX16, 0.1ns, CMOS, PBGA96, 9 X 13 MM, 1.20 MM HEIGHT, LEAD FREE, FBGA-96

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