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IS46TR16256A-125KBLA1-TR PDF预览

IS46TR16256A-125KBLA1-TR

更新时间： 2024-11-23 22:53:55
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美国芯成 - ISSI 动态存储器
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87页 4638K
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IC DRAM 4G PARALLEL 96TWBGA

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IS43/46TR16256A, IS43/46TR16256AL,  
IS43/46TR85120A, IS43/46TR85120AL  
512Mx8, 256Mx16 4Gb DDR3 SDRAM  
FEBRUARY 2018  
FEATURES  
Standard Voltage: VDD and VDDQ = 1.5V ± 0.075V  
Refresh Interval:  
7.8 us (8192 cycles/64 ms) Tc= -40°C to 85°C  
3.9 us (8192 cycles/32 ms) Tc= 85°C to 105°C  
Low Voltage (L): VDD and VDDQ = 1.35V + 0.1V, -0.067V  
- Backward compatible to 1.5V  
Partial Array Self Refresh  
High speed data transfer rates with system  
frequency up to 1066 MHz  
Asynchronous RESET pin  
8 internal banks for concurrent operation  
8n-Bit pre-fetch architecture  
TDQS (Termination Data Strobe) supported (x8  
only)  
OCD (Off-Chip Driver Impedance Adjustment)  
Dynamic ODT (On-Die Termination)  
Driver strength : RZQ/7, RZQ/6 (RZQ = 240 Ω)  
Write Leveling  
Programmable CAS Latency  
Programmable Additive Latency: 0, CL-1,CL-2  
Programmable CAS WRITE latency (CWL) based  
on tCK  
Programmable Burst Length: 4 and 8  
Up to 200 MHz in DLL off mode  
Operating temperature:  
Programmable Burst Sequence: Sequential or  
Interleave  
Commercial (TC = 0°C to +95°C)  
Industrial (TC = -40°C to +95°C)  
Automotive, A1 (TC = -40°C to +95°C)  
Automotive, A2 (TC = -40°C to +105°C)  
BL switch on the fly  
Auto Self Refresh(ASR)  
Self Refresh Temperature(SRT)  
OPTIONS  
ADDRESS TABLE  
Parameter  
Configuration:  
512Mx8  
A0-A15  
A0-A9  
BA0-2  
1KB  
256Mx16  
A0-A14  
A0-A9  
BA0-2  
2KB  
512Mx8  
256Mx16  
Package:  
96-ball BGA (9mm x 13mm) for x16  
78-ball BGA (9mm x 10.5mm) for x8  
Row Addressing  
Column Addressing  
Bank Addressing  
Page size  
Auto Precharge  
Addressing  
A10/AP  
A10/AP  
BL switch on the fly  
A12/BC#  
A12/BC#  
SPEED BIN  
Speed Option  
15H  
125K  
107M  
093N  
Units  
JEDEC Speed Grade  
DDR3-1333H  
DDR3-1600K  
DDR3-1866M  
DDR3-2133N  
CL-nRCD-nRP  
tRCD,tRP(min)  
9-9-9  
13.5  
11-11-11  
13.75  
13-13-13  
13.91  
14-14-14  
13.09  
tCK  
ns  
Note:Faster speed options are backward compatible to slower speed options.  
Copyright © 2018 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time  
without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised  
to obtain the latest version of this device specification before relying on any published information and before placing orders for products.  
Integrated Silicon Solution, Inc. does not recommend the use of any of its products in life support applications where the failure or malfunction of the product  
can reasonably be expected to cause failure of the life support system or to significantly affect its safety or effectiveness. Products are not authorized for use  
in such applications unless Integrated Silicon Solution, Inc. receives written assurance to its satisfaction, that:  
a.) the risk of injury or damage has been minimized;  
b.) the user assume all such risks; and  
c.) potential liability of Integrated Silicon Solution, Inc is adequately protected under the circumstances  
Integrated Silicon Solution, Inc. – www.issi.com –  
1
Rev. I1  
02/16/2018  
1234567...87

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IS46TR16256A-15HBLA1-TR ISSI

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IS46TR16256A-15HBLA2 ISSI

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IS46TR16256A-15HBLA2-TR ISSI

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 		IC DRAM 4G PARALLEL 96TWBGA
IS46TR16256AL-107MBLA1 ISSI

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 		512Mx8, 256Mx16 4Gb DDR3 SDRAM
IS46TR16256AL-107MBLA2 ISSI

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 		512Mx8, 256Mx16 4Gb DDR3 SDRAM
IS46TR16256AL-125KBLA1 ISSI

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 		DDR DRAM, 256MX16, 0.1ns, CMOS, PBGA96, 9 X 13 MM, 1.20 MM HEIGHT, LEAD FREE, FBGA-96
IS46TR16256AL-125KBLA2 ISSI

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 		DDR DRAM, 256MX16, 0.1ns, CMOS, PBGA96, 9 X 13 MM, 1.20 MM HEIGHT, LEAD FREE, FBGA-96
IS46TR16256AL-125KBLA2-TR ISSI

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 		IC DRAM 4G PARALLEL 96TWBGA

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