Datasheet > 存储 > DRAM> IS43DR86400B-25DBI

IS43DR86400B-25DBI

更新时间： 2024-11-24 12:08:39

品牌	Logo	应用领域
美国芯成 - ISSI		动态存储器双倍数据速率
页数	文件大小	规格书
30页	729K
描述
512Mb (x8, x16) DDR2 SDRAM

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IS43DR86400B-25DBI 技术参数

生命周期：	Obsolete	零件包装代码：	DSBGA
包装说明：	TFBGA,	针数：	60
Reach Compliance Code：	unknown	ECCN代码：	EAR99
HTS代码：	8542.32.00.28	风险等级：	5.64
访问模式：	FOUR BANK PAGE BURST	最长访问时间：	0.4 ns
其他特性：	AUTO/SELF REFRESH	JESD-30 代码：	R-PBGA-B60
长度：	10.5 mm	内存密度：	536870912 bit
内存集成电路类型：	DDR DRAM	内存宽度：	8
功能数量：	1	端口数量：	1
端子数量：	60	字数：	67108864 words
字数代码：	64000000	工作模式：	SYNCHRONOUS
最高工作温度：	85 °C	最低工作温度：	-40 °C
组织：	64MX8	封装主体材料：	PLASTIC/EPOXY
封装代码：	TFBGA	封装形状：	RECTANGULAR
封装形式：	GRID ARRAY, THIN PROFILE, FINE PITCH	座面最大高度：	1.2 mm
自我刷新：	YES	最大供电电压 (Vsup)：	1.9 V
最小供电电压 (Vsup)：	1.7 V	标称供电电压 (Vsup)：	1.8 V
表面贴装：	YES	技术：	CMOS
温度等级：	INDUSTRIAL	端子形式：	BALL
端子节距：	0.8 mm	端子位置：	BOTTOM
宽度：	10 mm

IS43DR86400B-25DBI 数据手册

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IS43/46DR86400B, IS43/46DR16320B

AUGUST 2012

512Mb (x8, x16) DDR2 SDRAM

FEATURES

•

Clock frequency up to 400MHz

•

On-Chip DLL aligns DQ and DQs transitions with

CK transitions

Differential clock inputs CK and CK#

VDD and VDDQ = 1.8V ± 0.1V

PASR (Partial Array Self Refresh)

SSTL_18 interface

Posted CAS

•

Programmable CAS Latency: 3, 4, 5 and 6

Programmable Additive Latency: 0, 1, 2, 3, 4 and 5

Write Latency = Read Latency-1

Programmable Burst Sequence: Sequential or

Interleave

tRAS lockout supported

•

Programmable Burst Length: 4 and 8

Automatic and Controlled Precharge Command

Power Down Mode

Read Data Strobe supported (x8 only)

Internal four bank operations with single pulsed

RAS

•

Operating temperature:

Auto Refresh and Self Refresh

Commercial (T_A= 0°C to +70°C ; T_C= 0°C to +85°C)

Industrial (T_A= -40°C to +85°C; T_C= -40°C to +95°C)

Automotive, A1 (T_A= -40°C to +85°C; T_C= -40°C to

+95°C)

Automotive, A2 (T_A= -40°C to +105°C; T_C= -40°C

to +105°C)

Refresh Interval: 7.8 µs (8192 cycles/64 ms)

OCD (Off-Chip Driver Impedance Adjustment)

ODT (On-Die Termination)

Weak Strength Data-Output Driver Option

Bidirectional differential Data Strobe (Single-

ended data-strobe is an optional feature)

OPTIONS

ADDRESS TABLE

Parameter

64Mx8

A0-A13

A0-A9

BA0-BA1

A10

32Mx16

A0-A12

A0-A9

BA0-BA1

A10

• Configuration:

Row Addressing

Column Addressing

Bank Addressing

Precharge Addressing

−

64Mx8 (16M x 8 x 4 banks)

32Mx16 (8M x 16 x 4 banks)

• Package:

−

60-ball TW-BGA for x8

84-ball TW-BGA for x16

Clock Cycle Timing

-5B

-37C

-3D

-25E

-25D

Units

Speed Grade

CL-tRCD-tRP

tCK (CL=3)

tCK (CL=4)

tCK (CL=5)

DDR2-400B

DDR2-533C

4-4-4

DDR2-667D

DDR2-800E

DDR2-800D

3-3-3

5-5-5

3.75

6-6-6

3.75

5-5-5

3.75

2.5

tCK

3.75

tCK (CL=6)

Frequency (max)

200

3.75

266

333

2.5

400

2.5

400

MHz

Note: The -5B device specification is shown for reference only.

without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to

obtain the latest version of this device specification before relying on any published information and before placing orders for products.

Integrated Silicon Solution, Inc. does not recommend the use of any of its products in life support applications where the failure or malfunction of the product can

reasonably be expected to cause failure of the life support system or to significantly affect its safety or effectiveness. Products are not authorized for use in such

applications unless Integrated Silicon Solution, Inc. receives written assurance to its satisfaction, that:

a.) the risk of injury or damage has been minimized;

b.) the user assume all such risks; and

c.) potential liability of Integrated Silicon Solution, Inc is adequately protected under the circumstances

Integrated Silicon Solution, Inc. – www.issi.com –

Rev. I, 8/01/2012

12 3 4 5 6 7...30

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与IS43DR86400B-25DBI相关器件

型号	品牌	获取价格	描述	数据表
IS43DR86400B-25DBLI	ISSI	获取价格	512Mb (x8, x16) DDR2 SDRAM
IS43DR86400B-25DBLI-TR	ISSI	获取价格	DDR DRAM, 64MX8, 0.4ns, CMOS, PBGA60, 10 X 10.50 MM, 1.20 MM HEIGHT, 0.80 MM PITCH, LEAD F
IS43DR86400B-25EBLI	ISSI	获取价格	512Mb (x8, x16) DDR2 SDRAM
IS43DR86400B-25EBLI-TR	ISSI	获取价格	DDR DRAM, 64MX8, 0.4ns, CMOS, PBGA60, 10 X 10.50 MM, 1.20 MM HEIGHT, 0.80 MM PITCH, LEAD F
IS43DR86400B-37CBLI	ISSI	获取价格	512Mb (x8, x16) DDR2 SDRAM
IS43DR86400B-37CBLI-TR	ISSI	获取价格	DDR DRAM, 64MX8, 0.5ns, CMOS, PBGA60, 10 X 10.50 MM, 1.20 MM HEIGHT, 0.80 MM PITCH, LEAD F
IS43DR86400B-3DBL	ISSI	获取价格	512Mb (x8, x16) DDR2 SDRAM
IS43DR86400B-3DBLI	ISSI	获取价格	512Mb (x8, x16) DDR2 SDRAM
IS43DR86400B-3DBLI-TR	ISSI	获取价格	DDR DRAM, 64MX8, 0.45ns, CMOS, PBGA60, 10 X 10.50 MM, 1.20 MM HEIGHT, 0.80 MM PITCH, LEAD
IS43DR86400C	ISSI	获取价格	64Mx8, 32Mx16 DDR2 DRAM

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