IS42S16800B-7TL-TR

更新时间： 2024-11-24 13:08:55

品牌	Logo	应用领域
美国芯成 - ISSI		存储内存集成电路光电二极管动态存储器时钟
页数	文件大小	规格书
60页	564K
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中文翻译

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数据手册

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IS42S81600B

IS42S16800B

ISSI

16Meg x 8, 8Meg x16

128-MBIT SYNCHRONOUS DRAM

MAY 2006

OVERVIEW

FEATURES

ISSI's 128Mb Synchronous DRAM achieves high-speed

data transfer using pipeline architecture. All inputs and

outputs signals refer to the rising edge of the clock

input.The 128Mb SDRAM is organized as follows.

• Clock frequency: 167, 143, 133 MHz

• Fully synchronous; all signals referenced to a

positive clock edge

• Internal bank for hiding row access/precharge

• Power supply

V^DD

3.3V 3.3V

VDDQ

IS42S81600B

4M x8x4 Banks

54-pin TSOPII

IS42S16800B

2M x16x4 Banks

54-pin TSOPII

IS42S81600B

IS42S16800B

3.3V 3.3V

• LVTTL interface

• Programmable burst length

– (1, 2, 4, 8, full page)

• Programmable burst sequence:

Sequential/Interleave

• Auto Refresh (CBR)

KEY TIMING PARAMETERS

• Self Refresh with programmable refresh periods

• 4096 refresh cycles every 64 ms

Parameter

-6

-7

-75E

Unit

• Random column address every clock cycle

• Programmable CAS latency (2, 3 clocks)

Clk Cycle Time

CAS Latency = 3

–

7.5

CAS Latency = 2

• Burst read/write and burst read/single write

operations capability

Clk Frequency

CAS Latency = 3

CAS Latency = 2

167

–

143

100

–

133

Mhz

• Burst termination by burst stop and precharge

command

Access Time from Clock

CAS Latency = 3

CAS Latency = 2

• Industrial Temperature Availability

• Lead-freeAvailability

5.4

–

5.4

–

time without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are

advised to obtain the latest version of this device specification before relying on any published information and before placing orders for products.

Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774

Rev. E

05/01/06

12 3 4 5 6 7...60

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与IS42S16800B-7TL-TR相关器件

型号	品牌	获取价格	描述	数据表
IS42S16800B-7T-TR	ISSI	获取价格	Synchronous DRAM, 8MX16, 5.4ns, CMOS, PDSO54, 0.400 INCH, TSOP2-54
IS42S16800D	ISSI	获取价格	16Meg x 8, 8Meg x16 128-MBIT SYNCHRONOUS DRAM
IS42S16800D-6B	ISSI	获取价格	16Meg x 8, 8Meg x16 128-MBIT SYNCHRONOUS DRAM
IS42S16800D-6BL	ISSI	获取价格	16Meg x 8, 8Meg x16 128-MBIT SYNCHRONOUS DRAM
IS42S16800D-6T	ISSI	获取价格	16Meg x 8, 8Meg x16 128-MBIT SYNCHRONOUS DRAM
IS42S16800D-6TL	ISSI	获取价格	16Meg x 8, 8Meg x16 128-MBIT SYNCHRONOUS DRAM
IS42S16800D-6TLI	ISSI	获取价格	16Meg x 8, 8Meg x16 128-MBIT SYNCHRONOUS DRAM
IS42S16800D-75EBL	ISSI	获取价格	16Meg x 8, 8Meg x16 128-MBIT SYNCHRONOUS DRAM
IS42S16800D-75EBLI	ISSI	获取价格	16Meg x 8, 8Meg x16 128-MBIT SYNCHRONOUS DRAM
IS42S16800D-75ETL	ISSI	获取价格	16Meg x 8, 8Meg x16 128-MBIT SYNCHRONOUS DRAM

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