是否Rohs认证: | 符合 | 生命周期: | Obsolete |
零件包装代码: | TSOP2 | 包装说明: | TSOP2, |
针数: | 54 | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | HTS代码: | 8542.32.00.02 |
风险等级: | 5.1 | Is Samacsys: | N |
访问模式: | FOUR BANK PAGE BURST | 最长访问时间: | 5.4 ns |
其他特性: | AUTO/SELF REFRESH | JESD-30 代码: | R-PDSO-G54 |
JESD-609代码: | e3 | 长度: | 22.22 mm |
内存密度: | 134217728 bit | 内存集成电路类型: | SYNCHRONOUS DRAM |
内存宽度: | 16 | 湿度敏感等级: | 3 |
功能数量: | 1 | 端口数量: | 1 |
端子数量: | 54 | 字数: | 8388608 words |
字数代码: | 8000000 | 工作模式: | SYNCHRONOUS |
最高工作温度: | 85 °C | 最低工作温度: | -40 °C |
组织: | 8MX16 | 封装主体材料: | PLASTIC/EPOXY |
封装代码: | TSOP2 | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE, THIN PROFILE | 峰值回流温度(摄氏度): | 260 |
认证状态: | Not Qualified | 座面最大高度: | 1.2 mm |
自我刷新: | YES | 最大供电电压 (Vsup): | 3.6 V |
最小供电电压 (Vsup): | 3 V | 标称供电电压 (Vsup): | 3.3 V |
表面贴装: | YES | 技术: | CMOS |
温度等级: | INDUSTRIAL | 端子面层: | Matte Tin (Sn) - annealed |
端子形式: | GULL WING | 端子节距: | 0.8 mm |
端子位置: | DUAL | 处于峰值回流温度下的最长时间: | 40 |
宽度: | 10.16 mm | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IS42S16800AL-10BL | ISSI |
获取价格 |
暂无描述 | |
IS42S16800AL-10BLI | ISSI |
获取价格 |
Synchronous DRAM, 8MX16, 7ns, CMOS, PBGA54, LEAD FREE, FBGA-54 | |
IS42S16800AL-10TL | ISSI |
获取价格 |
Synchronous DRAM, 8MX16, 7ns, CMOS, PDSO54, LEAD FREE, TSOP2-54 | |
IS42S16800AL-10TLI | ISSI |
获取价格 |
Synchronous DRAM, 8MX16, 7ns, CMOS, PDSO54, LEAD FREE, TSOP2-54 | |
IS42S16800AL-7BLI | ISSI |
获取价格 |
Synchronous DRAM, 8MX16, 5.4ns, CMOS, PBGA54, LEAD FREE, FBGA-54 | |
IS42S16800AL-7TL | ISSI |
获取价格 |
Synchronous DRAM, 8MX16, 5.4ns, CMOS, PDSO54, LEAD FREE, TSOP2-54 | |
IS42S16800B | ISSI |
获取价格 |
16Meg x 8, 8Meg x16 128-MBIT SYNCHRONOUS DRAM | |
IS42S16800B-6T | ISSI |
获取价格 |
16Meg x 8, 8Meg x16 128-MBIT SYNCHRONOUS DRAM | |
IS42S16800B-6TI | ISSI |
获取价格 |
暂无描述 | |
IS42S16800B-6TL | ISSI |
获取价格 |
16Meg x 8, 8Meg x16 128-MBIT SYNCHRONOUS DRAM |