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IS31WV16200-70B PDF预览

IS31WV16200-70B

更新时间: 2024-11-11 20:38:51
品牌 Logo 应用领域
美国芯成 - ISSI 内存集成电路
页数 文件大小 规格书
15页 63K
描述
Pseudo Static RAM, 2MX16, 70ns, CMOS, PBGA48, 6 X 9 MM, MINI, FBGA-48

IS31WV16200-70B 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Obsolete零件包装代码:BGA
包装说明:LFBGA,针数:48
Reach Compliance Code:compliantECCN代码:3A991.B.2.A
HTS代码:8542.32.00.41风险等级:5.92
最长访问时间:70 nsJESD-30 代码:R-PBGA-B48
JESD-609代码:e0长度:8 mm
内存密度:33554432 bit内存集成电路类型:PSEUDO STATIC RAM
内存宽度:16功能数量:1
端子数量:48字数:2097152 words
字数代码:2000000工作模式:ASYNCHRONOUS
最高工作温度:70 °C最低工作温度:
组织:2MX16封装主体材料:PLASTIC/EPOXY
封装代码:LFBGA封装形状:RECTANGULAR
封装形式:GRID ARRAY, LOW PROFILE, FINE PITCH并行/串行:PARALLEL
峰值回流温度(摄氏度):NOT SPECIFIED认证状态:Not Qualified
座面最大高度:1.35 mm最大供电电压 (Vsup):3.6 V
最小供电电压 (Vsup):1.65 V表面贴装:YES
技术:CMOS温度等级:COMMERCIAL
端子面层:TIN LEAD端子形式:BALL
端子节距:0.75 mm端子位置:BOTTOM
处于峰值回流温度下的最长时间:NOT SPECIFIED宽度:6 mm
Base Number Matches:1

IS31WV16200-70B 数据手册

 浏览型号IS31WV16200-70B的Datasheet PDF文件第2页浏览型号IS31WV16200-70B的Datasheet PDF文件第3页浏览型号IS31WV16200-70B的Datasheet PDF文件第4页浏览型号IS31WV16200-70B的Datasheet PDF文件第5页浏览型号IS31WV16200-70B的Datasheet PDF文件第6页浏览型号IS31WV16200-70B的Datasheet PDF文件第7页 
®
IS32WV16100  
IS32WV16200  
1M x 16 (16-MBIT) , 2M x16 (32-MBIT)  
PSEUDO STATIC RAM  
ISSI  
ADVANCED INFORMATION  
MARCH2002  
FEATURES  
DESCRIPTION  
• Access time: 70ns  
The ISSI IS32V16100 and IS32V16200 are high-perfor-  
mance CMOS Pseudo Static RAM organized as a 1Meg  
x16, 2Meg x16, bits respectively.  
• TTL compatible inputs and outsputs;tri-state I/O  
• Wide Power supply voltage: 1.65V to 3.6V  
• CMOS Standby  
60µA (16-MBIT)  
70µA (32-MBIT)  
ISSI CMOS technology provides high density, high speed  
low power devices that features SRAM-like write timing.  
Data is written to memory cells on the rising edge of the  
WE signal. With a page size of 4 words, the device has a  
page access operation. The device also supports deep  
power-downmodeprovidinglow-powerstandby.  
• Deep Power Down Standby  
5µA (16-MBIT)  
5µA (32-MBIT)  
• Deep Power-Down Mode: Data Invalid  
• Page Operation Mode: Four Word Access  
• Logic compatible with SRAM R/W (WE) pin.  
• Industrial Temperature Range: -40oC to 85oC  
• Page 48 pin fBGA (6mm x 9mm)  
TheIS32V16100andIS32V16200arepackagedina48pin  
FBGA (6mm x 9mm)  
.
1Mb x16  
2Mb x 16  
MEMORY ARRAY  
A0-A1  
A2-A20/A21  
DECODER  
VCC  
GND  
I/O  
DATA  
CIRCUIT  
COLUMN I/O  
I/O1-I/O16  
UB  
LB  
CE  
CS  
WE  
OE  
CONTROL  
CIRCUIT  
ISSI reserves the right to make changes to its products at any time without notice in order to improve design and supply the best possible product. We assume no responsibility for any  
errors which may appear in this publication. © Copyright 2001, Integrated Silicon Solution, Inc.  
Integrated Silicon Solution, Inc. — 1-800-379-4774  
Rev. 00B  
1
03/18/02  

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