Datasheet > IS31WV16200B-70MI

IS31WV16200B-70MI

更新时间： 2024-11-11 20:55:03

品牌	Logo	应用领域
美国芯成 - ISSI		静态存储器
页数	文件大小	规格书
15页	58K
描述
SRAM

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技术参数
数据手册

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IS31WV16200B-70MI 技术参数

是否Rohs认证：	不符合	生命周期：	Active
Reach Compliance Code：	compliant	风险等级：	5.88
JESD-609代码：	e0	端子面层：	Tin/Lead (Sn/Pb)
Base Number Matches：	1

IS31WV16200B-70MI 数据手册

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IS32WV16100A/B

IS32WV16200A/B

1M x 16 (16-MBIT) , 2M x16 (32-MBIT)

PSEUDO STATIC RAM

ISSI

ADVANCED INFORMATION

JANUARY2003

FEATURES

DESCRIPTION

The ISSI IS32WV16100A/B and IS32WV16200A/B are

high-performanceCMOS PseudoStaticRAMorganizedas

• Access time: 70ns

• TTL compatible inputs and outsputs;tri-state I/O

• Wide Power supply voltage: 1.65V to 2.2V (A)

2.2V to 3.6V (B)

a 1Meg x16, 2Meg x16, bits respectively.

ISSI CMOS technology provides high density, high speed

low power devices that features SRAM-like write timing.

DataiswrittentomemorycellsontherisingedgeoftheWE

signal. With a page size of 4 words, the device has a page

access operation. The device also supports deep power-

• CMOS Standby

60µA (16-MBIT)

70µA (32-MBIT)

downmodeprovidinglow-powerstandby.

• Deep Power Down Standby

5µA (16-MBIT)

The IS32WV16100A/B and IS32WV16200A/B are pack-

aged in a 48 pin FBGA (6mm x 8mm).

5µA (32-MBIT)

• Deep Power-Down Mode: Data Invalid

• Page Operation Mode: Four Word Access

• Logic compatible with SRAM R/W (WE) pin.

• Industrial Temperature Range: -40^oC to 85^oC

• Page 48 pin FBGA (6mm x 8mm)

FUNCTIONAL BLOCK DIAGRAM

1Mb x16

2Mb x 16

MEMORY ARRAY

A0-A1

A2-A20/A21

DECODER

GND

I/O

DATA

CIRCUIT

COLUMN I/O

I/O1-I/O16

CONTROL

CIRCUIT

without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to

obtain the latest version of this device specification before relying on any published information and before placing orders for products.

Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774

Rev. 00B

01/20/03

12 3 4 5 6 7...15

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