®
IS32WV10008ALL
IS32WV10008BLL
ISSI
ADVANCEDINFORMATION
AUGUST2002
1Meg x 8 LOW VOLTAGE,
ULTRA LOW POWER PSEUDO RAM
FEATURES
DESCRIPTION
TheISSIIS32WV10008ALL/IS32WV10008BLLare high-
speed,8MbitstaticRAMsorganizedas1Mwordsby8bits.
It is fabricated using ISSI's high-performance CMOS
technology. This highly reliable process coupled with
innovative circuit design techniques, yields high-
performance and low power consumption devices.
• High-speed access time: 55ns, 70, 85, 100ns
• CMOS low power operation
• TTL compatible interface levels
• Single power supply
– 1.65V--2.2V VDD (32WV10008ALL)
– 2.3V--3.6V VDD (32WV10008BLL)
When CS1 is HIGH (deselected) or when CS2 is LOW
(deselected)orwhenCS1isLOW,CS2isHIGH,thedevice
assumes a standby mode at which the power dissipation
can be reduced down with CMOS input levels.
• Fully static operation: no clock or refresh
required
Easy memory expansion is provided by using Chip Enable
and Output Enable inputs. The active LOW Write Enable
(WE) controls both writing and reading of the memory.
• Three state outputs
• Industrial temperature available
TheIS32WV10008ALLandIS32WV10008BLLarepackged
intheJEDECstandard48-pinminiBGA(6mmx8mm)and
44-Pin TSOP (TYPE II).
FUNCTIONAL BLOCK DIAGRAM
1M x 8
MEMORY ARRAY
A0-A19
DECODER
VDD
GND
I/O
DATA
CIRCUIT
COLUMN I/O
DQ0-DQ7
CS2
CS1
OE
CONTROL
CIRCUIT
WE
Copyright © 2002 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time
without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to
obtain the latest version of this device specification before relying on any published information and before placing orders for products.
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774
Rev. 00A
1
08/15/02