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IS32WV10008BLL-70BI PDF预览

IS32WV10008BLL-70BI

更新时间: 2024-11-11 19:46:43
品牌 Logo 应用领域
美国芯成 - ISSI 内存集成电路
页数 文件大小 规格书
12页 50K
描述
Pseudo Static RAM, 1MX8, 70ns, CMOS, PBGA48, 6 X 8 MM, BGA-48

IS32WV10008BLL-70BI 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Obsolete零件包装代码:BGA
包装说明:6 X 8 MM, BGA-48针数:48
Reach Compliance Code:compliantECCN代码:3A991.B.2.A
HTS代码:8542.32.00.41风险等级:5.92
最长访问时间:70 nsJESD-30 代码:R-PBGA-B48
JESD-609代码:e0长度:8 mm
内存密度:8388608 bit内存集成电路类型:PSEUDO STATIC RAM
内存宽度:8湿度敏感等级:3
功能数量:1端子数量:48
字数:1048576 words字数代码:1000000
工作模式:ASYNCHRONOUS最高工作温度:85 °C
最低工作温度:-40 °C组织:1MX8
封装主体材料:PLASTIC/EPOXY封装代码:LFBGA
封装形状:RECTANGULAR封装形式:GRID ARRAY, LOW PROFILE, FINE PITCH
并行/串行:PARALLEL峰值回流温度(摄氏度):NOT SPECIFIED
认证状态:Not Qualified座面最大高度:1.35 mm
最大供电电压 (Vsup):3.6 V最小供电电压 (Vsup):2.3 V
表面贴装:YES技术:CMOS
温度等级:INDUSTRIAL端子面层:Tin/Lead (Sn/Pb)
端子形式:BALL端子节距:0.75 mm
端子位置:BOTTOM处于峰值回流温度下的最长时间:NOT SPECIFIED
宽度:6 mmBase Number Matches:1

IS32WV10008BLL-70BI 数据手册

 浏览型号IS32WV10008BLL-70BI的Datasheet PDF文件第2页浏览型号IS32WV10008BLL-70BI的Datasheet PDF文件第3页浏览型号IS32WV10008BLL-70BI的Datasheet PDF文件第4页浏览型号IS32WV10008BLL-70BI的Datasheet PDF文件第5页浏览型号IS32WV10008BLL-70BI的Datasheet PDF文件第6页浏览型号IS32WV10008BLL-70BI的Datasheet PDF文件第7页 
®
IS32WV10008ALL  
IS32WV10008BLL  
ISSI  
ADVANCEDINFORMATION  
AUGUST2002  
1Meg x 8 LOW VOLTAGE,  
ULTRA LOW POWER PSEUDO RAM  
FEATURES  
DESCRIPTION  
TheISSIIS32WV10008ALL/IS32WV10008BLLare high-  
speed,8MbitstaticRAMsorganizedas1Mwordsby8bits.  
It is fabricated using ISSI's high-performance CMOS  
technology. This highly reliable process coupled with  
innovative circuit design techniques, yields high-  
performance and low power consumption devices.  
• High-speed access time: 55ns, 70, 85, 100ns  
• CMOS low power operation  
• TTL compatible interface levels  
• Single power supply  
– 1.65V--2.2V VDD (32WV10008ALL)  
– 2.3V--3.6V VDD (32WV10008BLL)  
When CS1 is HIGH (deselected) or when CS2 is LOW  
(deselected)orwhenCS1isLOW,CS2isHIGH,thedevice  
assumes a standby mode at which the power dissipation  
can be reduced down with CMOS input levels.  
• Fully static operation: no clock or refresh  
required  
Easy memory expansion is provided by using Chip Enable  
and Output Enable inputs. The active LOW Write Enable  
(WE) controls both writing and reading of the memory.  
• Three state outputs  
• Industrial temperature available  
TheIS32WV10008ALLandIS32WV10008BLLarepackged  
intheJEDECstandard48-pinminiBGA(6mmx8mm)and  
44-Pin TSOP (TYPE II).  
FUNCTIONAL BLOCK DIAGRAM  
1M x 8  
MEMORY ARRAY  
A0-A19  
DECODER  
VDD  
GND  
I/O  
DATA  
CIRCUIT  
COLUMN I/O  
DQ0-DQ7  
CS2  
CS1  
OE  
CONTROL  
CIRCUIT  
WE  
Copyright © 2002 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time  
without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to  
obtain the latest version of this device specification before relying on any published information and before placing orders for products.  
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774  
Rev. 00A  
1
08/15/02  

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