Datasheet > IS32WV204816B

IS32WV204816B

更新时间： 2024-11-11 11:10:47

品牌	Logo	应用领域
美国芯成 - ISSI		/
页数	文件大小	规格书
18页	101K
描述
2M x 16 (32-Mbit) PSEUDO STATIC RAM

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IS32WV204816B 数据手册

IS32WV204816B

ISSI

2M x 16 (32-Mbit) PSEUDO STATIC RAM

MAY 2004

FEATURES

DESCRIPTION

The ISSI IS32WV204816B is a high-performance CMOS

Pseudo Static RAM, organized as 2Meg x 16 bits.

• Access time: 70ns

• TTL compatible inputs and outputs; tri-state I/O

• Wide Power supply voltage: 2.2V to 3.6V

• CMOS Standby: 70µA (32-Mbit)

ISSI CMOS technology provides high density, high speed

low power devices that features SRAM-like write timing.

DataiswrittentomemorycellsontherisingedgeoftheWE

signal. With a page size of 4 words, the device has a page

access operation. The device also supports deep power-

• Deep Power Down Standby: 5µA (32-Mbit)

• Deep Power-Down Mode: Data Invalid

• Page Operation Mode: Four Word Access

• Logic compatible with SRAM R/W (WE) pin.

• Industrial Temperature Range: -40^oC to 85^oC

downmodeprovidinglow-powerstandby.

The IS32WV204816B is packaged in a 48-pin mini-BGA

(6mm x 8mm).

FUNCTIONAL BLOCK DIAGRAM

2Mb x 16

MEMORY ARRAY

A0-A1

A2-A20

DECODER

VDD

GND

I/O

DATA

CIRCUIT

COLUMN I/O

I/O0-I/O15

CS1

CS2

CONTROL

CIRCUIT

without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to

obtain the latest version of this device specification before relying on any published information and before placing orders for products.

Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774

Rev. B

04/29/04

12 3 4 5 6 7...18

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