®
IS32WV16100A/B
IS32WV16200A/B
1M x 16 (16-MBIT) , 2M x16 (32-MBIT)
PSEUDO STATIC RAM
ISSI
ADVANCED INFORMATION
JANUARY2003
FEATURES
DESCRIPTION
The ISSI IS32WV16100A/B and IS32WV16200A/B are
high-performanceCMOS PseudoStaticRAMorganizedas
• Access time: 70ns
• TTL compatible inputs and outsputs;tri-state I/O
• Wide Power supply voltage: 1.65V to 2.2V (A)
2.2V to 3.6V (B)
a 1Meg x16, 2Meg x16, bits respectively.
ISSI CMOS technology provides high density, high speed
low power devices that features SRAM-like write timing.
DataiswrittentomemorycellsontherisingedgeoftheWE
signal. With a page size of 4 words, the device has a page
access operation. The device also supports deep power-
• CMOS Standby
60µA (16-MBIT)
70µA (32-MBIT)
downmodeprovidinglow-powerstandby.
• Deep Power Down Standby
5µA (16-MBIT)
The IS32WV16100A/B and IS32WV16200A/B are pack-
aged in a 48 pin FBGA (6mm x 8mm).
5µA (32-MBIT)
• Deep Power-Down Mode: Data Invalid
• Page Operation Mode: Four Word Access
• Logic compatible with SRAM R/W (WE) pin.
• Industrial Temperature Range: -40oC to 85oC
• Page 48 pin FBGA (6mm x 8mm)
FUNCTIONAL BLOCK DIAGRAM
1Mb x16
2Mb x 16
MEMORY ARRAY
A0-A1
A2-A20/A21
DECODER
V
DD
GND
I/O
DATA
CIRCUIT
COLUMN I/O
I/O1-I/O16
UB
LB
CE
CS
WE
OE
CONTROL
CIRCUIT
Copyright © 2003 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time
without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to
obtain the latest version of this device specification before relying on any published information and before placing orders for products.
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774
Rev. 00B
1
01/20/03