Datasheet > IRS21064DS

IRS21064DS

更新时间： 2024-01-24 08:54:27

品牌	Logo	应用领域
英飞凌 - INFINEON		光电二极管
页数	文件大小	规格书
9页	339K
描述
MOSFET Driver, CMOS, PDSO14,

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技术参数
数据手册

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IRS21064DS 技术参数

是否Rohs认证：	不符合	生命周期：	Transferred
包装说明：	SOP, SOP14,.25	Reach Compliance Code：	unknown
风险等级：	5.88	JESD-30 代码：	R-PDSO-G14
端子数量：	14	最高工作温度：	125 °C
最低工作温度：	-40 °C	封装主体材料：	PLASTIC/EPOXY
封装代码：	SOP	封装等效代码：	SOP14,.25
封装形状：	RECTANGULAR	封装形式：	SMALL OUTLINE
电源：	15 V	认证状态：	Not Qualified
子类别：	MOSFET Drivers	标称供电电压：	15 V
表面贴装：	YES	技术：	CMOS
温度等级：	AUTOMOTIVE	端子形式：	GULL WING
端子节距：	1.27 mm	端子位置：	DUAL
Base Number Matches：	1

IRS21064DS 数据手册

Data Sheet No. PD60241

PRELIMINARY DATASHEET

IRS2106(4)D(S)PbF

HIGH AND LOW SIDE DRIVER

Packages

Features

•

Floating channel designed for bootstrap operation

Fully operational to +600V

Tolerant to negative transient voltage – dV/dt immune

Gate drive supply range from 10 to 20V

Undervoltage lockout for both channels

3.3V, 5V and 15V input logic compatible

Matched propagation delay for both channels

Logic and power ground +/- 5V offset.

Lower di/dt gate driver for better noise immunity

Outputs in phase with inputs

•

8-Lead SOIC

8-Lead PDIP

Integrated bootstrap diode

14-Lead SOIC

14-Lead PDIP

Description

The IRS2106(4)D(S) are high

IRS2106D/IRS2108D/IRS2109D/Feature Comparison

Cross-

voltage, high speed power MOSFET

an 1GBT drivers with independent

high and low side referenced output

channels. Proprietary HVIC and latch

immune CMOS technologies enable

ruggedized monolithic construction.

The logic input is compatible with

Standard CMOS or LSTTL output,

down to 3.3V logic. The output

Part

Input

Logic

Conduction

Prevention

logic

Dead-Time

Ground Pins Ton/Toff

2106

21064

2108

21084

2109

21094

COM

HIN/LIN

___

HIN/LIN

___

IN/SD

yes

none

Internal 540ns

Programmable 0.54- 5us VSS/COM

Internal 540ns COM

Programmable 0.54- 5us VSS/COM

515/500

220/220

750/220

VSS/COM

COM

drivers feature a high pulse current

buffer stage designed for minimum

driver cross-conduction. The floating channel can be used to drive an N-channel power MOSFET or 1GBT in the high side

configuration which operates up to 600 volts.

www.irf.com

12 3 4 5 6 7...9

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