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IRS2106DPBF PDF预览

IRS2106DPBF

更新时间: 2024-11-19 10:51:59
品牌 Logo 应用领域
英飞凌 - INFINEON 光电二极管
页数 文件大小 规格书
9页 339K
描述
MOSFET Driver, CMOS, PDIP8,

IRS2106DPBF 数据手册

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Data Sheet No. PD60241  
PRELIMINARY DATASHEET  
IRS2106(4)D(S)PbF  
HIGH AND LOW SIDE DRIVER  
Packages  
Features  
Floating channel designed for bootstrap operation  
Fully operational to +600V  
Tolerant to negative transient voltage – dV/dt immune  
Gate drive supply range from 10 to 20V  
Undervoltage lockout for both channels  
3.3V, 5V and 15V input logic compatible  
Matched propagation delay for both channels  
Logic and power ground +/- 5V offset.  
Lower di/dt gate driver for better noise immunity  
Outputs in phase with inputs  
8-Lead SOIC  
8-Lead PDIP  
Integrated bootstrap diode  
14-Lead SOIC  
14-Lead PDIP  
Description  
The IRS2106(4)D(S) are high  
IRS2106D/IRS2108D/IRS2109D/Feature Comparison  
Cross-  
voltage, high speed power MOSFET  
an 1GBT drivers with independent  
high and low side referenced output  
channels. Proprietary HVIC and latch  
immune CMOS technologies enable  
ruggedized monolithic construction.  
The logic input is compatible with  
Standard CMOS or LSTTL output,  
down to 3.3V logic. The output  
Part  
Input  
Logic  
Conduction  
Prevention  
logic  
Dead-Time  
Ground Pins Ton/Toff  
2106  
21064  
2108  
21084  
2109  
21094  
COM  
HIN/LIN  
___  
HIN/LIN  
___  
IN/SD  
no  
yes  
yes  
none  
Internal 540ns  
Programmable 0.54- 5us VSS/COM  
Internal 540ns COM  
Programmable 0.54- 5us VSS/COM  
515/500  
220/220  
750/220  
VSS/COM  
COM  
drivers feature a high pulse current  
buffer stage designed for minimum  
driver cross-conduction. The floating channel can be used to drive an N-channel power MOSFET or 1GBT in the high side  
configuration which operates up to 600 volts.  
www.irf.com  
1

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