Data Sheet No. PD60241
PRELIMINARY DATASHEET
IRS2106(4)D(S)PbF
HIGH AND LOW SIDE DRIVER
Packages
Features
•
Floating channel designed for bootstrap operation
Fully operational to +600V
Tolerant to negative transient voltage – dV/dt immune
Gate drive supply range from 10 to 20V
Undervoltage lockout for both channels
3.3V, 5V and 15V input logic compatible
Matched propagation delay for both channels
Logic and power ground +/- 5V offset.
Lower di/dt gate driver for better noise immunity
Outputs in phase with inputs
•
•
•
•
•
•
•
•
8-Lead SOIC
8-Lead PDIP
Integrated bootstrap diode
14-Lead SOIC
14-Lead PDIP
Description
The IRS2106(4)D(S) are high
IRS2106D/IRS2108D/IRS2109D/Feature Comparison
Cross-
voltage, high speed power MOSFET
an 1GBT drivers with independent
high and low side referenced output
channels. Proprietary HVIC and latch
immune CMOS technologies enable
ruggedized monolithic construction.
The logic input is compatible with
Standard CMOS or LSTTL output,
down to 3.3V logic. The output
Part
Input
Logic
Conduction
Prevention
logic
Dead-Time
Ground Pins Ton/Toff
2106
21064
2108
21084
2109
21094
COM
HIN/LIN
___
HIN/LIN
___
IN/SD
no
yes
yes
none
Internal 540ns
Programmable 0.54- 5us VSS/COM
Internal 540ns COM
Programmable 0.54- 5us VSS/COM
515/500
220/220
750/220
VSS/COM
COM
drivers feature a high pulse current
buffer stage designed for minimum
driver cross-conduction. The floating channel can be used to drive an N-channel power MOSFET or 1GBT in the high side
configuration which operates up to 600 volts.
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